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Journal ArticleDOI

Magnetic Domain-Wall Logic

Dan A. Allwood, +5 more
- 09 Sep 2005 - 
- Vol. 309, Iss: 5741, pp 1688-1692
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TLDR
“Spintronics,” in which both the spin and charge of electrons are used for logic and memory operations, promises an alternate route to traditional semiconductor electronics.
Abstract
“Spintronics,” in which both the spin and charge of electrons are used for logic and memory operations, promises an alternate route to traditional semiconductor electronics. A complete logic architecture can be constructed, which uses planar magnetic wires that are less than a micrometer in width. Logical NOT, logical AND, signal fan-out, and signal cross-over elements each have a simple geometric design, and they can be integrated together into one circuit. An additional element for data input allows information to be written to domain-wall logic circuits.

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Citations
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Journal ArticleDOI

Magnetic Domain-Wall Racetrack Memory

TL;DR: The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip and is an example of the move toward innately three-dimensional microelectronic devices.
Journal ArticleDOI

The emergence of spin electronics in data storage

TL;DR: The authors are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials, allowing faster, low-energy operations: spin electronics is on its way.
Journal ArticleDOI

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

TL;DR: Bipolar voltage-actuated switches, a family of nonlinear dynamical memory devices, can execute material implication (IMP), which is a fundamental Boolean logic operation on two variables p and q such that pIMPq is equivalent to (NOTp)ORq.
Journal ArticleDOI

Current-driven dynamics of chiral ferromagnetic domain walls

TL;DR: This work directly confirms the DW chirality and rigidity by examining current-driven DW dynamics with magnetic fields applied perpendicular and parallel to the spin spiral and resolves the origin of controversial experimental results.
Journal ArticleDOI

Antiferromagnetic spintronics

TL;DR: A review of the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials can be found in this article, where the authors discuss some of the remaining bottlenecks and suggest possible avenues for future research.
References
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Journal ArticleDOI

Spintronics: a spin-based electronics vision for the future.

TL;DR: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron, which has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices.
Journal ArticleDOI

Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices.

TL;DR: This work ascribes this giant magnetoresistance of (001)Fe/(001)Cr superlattices prepared by molecularbeam epitaxy to spin-dependent transmission of the conduction electrons between Fe layers through Cr layers.
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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

TL;DR: Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Journal ArticleDOI

Current-driven excitation of magnetic multilayers

TL;DR: In this paper, a new mechanism was proposed for exciting the magnetic state of a ferromagnet, where a transfer of vectorial spin accompanied an electric current flowing perpendicular to two parallel magnetic films connected by a normal metallic spacer.
Journal ArticleDOI

Emission of spin waves by a magnetic multilayer traversed by a current.

TL;DR: In this paper, the interaction between spin waves and itinerant electrons is considerably enhanced in the vicinity of an interface between normal and ferromagnetic layers in metallic thin films, leading to a local increase of the Gilbert damping parameter which characterizes spin dynamics.
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