Magnetoresistance Effect and the Applications for Organic Spin Valves Using Molecular Spacers
Reads0
Chats0
TLDR
Basic knowledge of the fabrication and evaluation of organic spin devices is introduced, some remarkable applications for organic spin valves using molecular spacers are reviewed, and the current bottlenecks that hinder further enhancement for the performance of organicspin devices are discussed.Abstract:
Organic spin devices utilizing the properties of both spin and charge inherent in electrons have attracted extensive research interest in the field of future electronic device development. In the last decade, magnetoresistance effects, including giant magetoresistance and tunneling magnetoresistance, have been observed in organic spintronics. Significant progress has been made in understanding spin-dependent transport phenomena, such as spin injection or tunneling, manipulation, and detection in organic spintronics. However, to date, materials that are effective for preparing organic spin devices for commercial applications are still lacking. In this report, we introduce basic knowledge of the fabrication and evaluation of organic spin devices, and review some remarkable applications for organic spin valves using molecular spacers. The current bottlenecks that hinder further enhancement for the performance of organic spin devices is also discussed. This report presents some research ideas for designing organic spin devices operated at room temperature.read more
Citations
More filters
Journal ArticleDOI
Interfacial polymerized copolymers of aniline and phenylenediamine with tunable magnetoresistance and negative permittivity
Feichong Yao,Wenhao Xie,Wenhao Xie,Ming Yang,Hang Zhang,Hongbo Gu,Ai Du,Nithesh Naik,David P. Young,Jing Lin,Zhanhu Guo +10 more
TL;DR: In this article, three types of phenylenediamine (PDA) have been incorporated into the PANI polymer backbone by the interfacial copolymerization of aniline with PDA, and the results demonstrate that different types and contents of PDAs could disclose the distinct effects on the chemical structures, crystalline structures, and morphologies for copolymers of PANI with PDAs affirmed by Fourier transform infrared (FTIR) spectroscopy, solid-state 13C nuclear magnetic resonance (13C NMR), X-ray diffraction (X
Journal Article
Is CrO$_2$ Fully Spin Polarized? Analysis of Andreev Spectra and Excess Current
TL;DR: In this paper, an extensive theoretical analysis of point-contact Andreev reflection data available in the literature on ferromagnetic CrO2 is presented, showing that the spectra can be well understood within a model of fully spin-polarized bands in CrO 2 together with spinactive scattering at the contact.
Journal ArticleDOI
Spin polarization and magnetic properties at the C60/Fe4N(001) spinterface
Xuefei Han,Wenbo Mi,Xiaocha Wang +2 more
TL;DR: In this article, the spin polarization and interfacial magnetism at the C60/Fe4N(001) spinterface were investigated using first-principles calculations and spin-polarized scanning tunneling microscopy simulations.
Journal ArticleDOI
Large magnetoresistance and spin-polarized photocurrent in La2/3Sr1/3MnO3(Co)/quaterthiophene/La2/3Sr1/3MnO3 organic magnetic tunnel junctions
Xuefei Han,Wenbo Mi,Xiaocha Wang +2 more
TL;DR: In this paper, the spin-dependent transport properties in OMTJ with different spatial spin-polarized interfaces and their manipulation by light are investigated systematically by theoretical calculations, and the results contribute to understanding the spin transport properties and designing multifunctional organic spintronic devices.
Journal ArticleDOI
Tunneling magnetoresistance and light modulation in Fe4N(La2/3Sr1/3MnO3)/C60/Fe4N single molecule magnetic tunnel junctions
TL;DR: In this paper, the spin-dependent transport properties and light modulation of Fe4N/C60/Fe4N and La2/3Sr1/3MnO3/c60/C4N single-molecule magnetic tunnel junctions were investigated systematically by first-principles quantum transport calculations.
References
More filters
Journal ArticleDOI
Spintronics: a spin-based electronics vision for the future.
Stuart A. Wolf,Stuart A. Wolf,David D. Awschalom,Robert A. Buhrman,J. M. Daughton,S. von Molnar,Michael L. Roukes,Almadena Chtchelkanova,Daryl Treger +8 more
TL;DR: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron, which has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices.
Journal ArticleDOI
Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices.
Mario Norberto Baibich,J. M. Broto,Albert Fert,F. Nguyen Van Dau,Frédéric Petroff,P. Etienne,G. Creuzet,A. Friederich,Jean Chazelas +8 more
TL;DR: This work ascribes this giant magnetoresistance of (001)Fe/(001)Cr superlattices prepared by molecularbeam epitaxy to spin-dependent transmission of the conduction electrons between Fe layers through Cr layers.
Journal ArticleDOI
Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange
TL;DR: The electrical resistivity of Fe-Cr-Fe layers with antiferromagnetic interlayer exchange increases when the magnetizations of the Fe layers are aligned antiparallel, much stronger than the usual anisotropic magnetoresistance.
Journal ArticleDOI
Tunneling between ferromagnetic films
TL;DR: In this article, the mean magnetizations of the two ferromagnetic film are parrallel or antiparallel and conductance measurement is related to the spin polarizations of conduction electrons.
Journal ArticleDOI
Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions.
TL;DR: b, R/R, is 11.8%, 20%, and 24%, respectively, consistent with Julliere's model based on the spin polarization of the conduction electrons of the magnetic films, in qualitative agreement with Slonczewski's model.