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Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg
Jun Mao,Jing Shuai,Shaowei Song,Yixuan Wu,Rebecca Dally,Zihang Liu,Jifeng Sun,Qinyong Zhang,Clarina Dela Cruz,Stephen D. Wilson,Yanzhong Pei,David J. Singh,Gang Chen,Jiawei Zhou,Ching-Wu Chu,Zhifeng Ren +15 more
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TLDR
It is demonstrated that by manipulating the carrier scattering mechanism in n-type Mg3Sb2-based materials, a substantial improvement in carrier mobility, and hence the power factor, can be achieved.Abstract:
Significance Higher carrier mobility can contribute to a larger power factor, so it is important to identify effective means for achieving higher carrier mobility. Since carrier mobility is governed by the band structure and the carrier scattering mechanism, its possible enhancement could be obtained by manipulating either or both of these. Here, we report a substantial enhancement in carrier mobility by tuning the carrier scattering mechanism in n-type Mg3Sb2-based materials. The ionized impurity scattering in these materials has been shifted into mixed scattering by acoustic phonons and ionized impurities. Our results clearly demonstrate that the strategy of tuning the carrier scattering mechanism is quite effective for improving the mobility and should also be applicable to other material systems. Achieving higher carrier mobility plays a pivotal role for obtaining potentially high thermoelectric performance. In principle, the carrier mobility is governed by the band structure as well as by the carrier scattering mechanism. Here, we demonstrate that by manipulating the carrier scattering mechanism in n-type Mg3Sb2-based materials, a substantial improvement in carrier mobility, and hence the power factor, can be achieved. In this work, Fe, Co, Hf, and Ta are doped on the Mg site of Mg3.2Sb1.5Bi0.49Te0.01, where the ionized impurity scattering crosses over to mixed ionized impurity and acoustic phonon scattering. A significant improvement in Hall mobility from ∼16 to ∼81 cm2⋅V−1⋅s−1 is obtained, thus leading to a notably enhanced power factor of ∼13 μW⋅cm−1⋅K−2 from ∼5 μW⋅cm−1⋅K−2. A simultaneous reduction in thermal conductivity is also achieved. Collectively, a figure of merit (ZT) of ∼1.7 is obtained at 773 K in Mg3.1Co0.1Sb1.5Bi0.49Te0.01. The concept of manipulating the carrier scattering mechanism to improve the mobility should also be applicable to other material systems.read more
Citations
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High thermoelectric cooling performance of n-type Mg 3 Bi 2 -based materials.
TL;DR: In this article, the authors reported n-type magnesium bismuthide (Mg3Bi2)-based materials with a peak figure of merit (ZT) of 0.9 at 350 kelvin.
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Advances in thermoelectrics
TL;DR: In this article, a thermoelectric generator is used to directly convert heat into electricity, which holds great promise for tackling the ever-increasing energy sustainability issue in the future.
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Thermoelectric cooling materials.
Jun Mao,Gang Chen,Zhifeng Ren +2 more
TL;DR: The current status of, and future outlook for, thermoelectric cooling materials are reviewed, coefficients of performance for these systems and the state-of-the-art for materials are discussed, and strategies for the discovery of improved thermoeLECTric materials are suggested.
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Discovery of TaFeSb-based half-Heuslers with high thermoelectric performance
Hangtian Zhu,Jun Mao,Yuwei Li,Jifeng Sun,Yumei Wang,Qing Zhu,Guannan Li,Qichen Song,Jiawei Zhou,Yuhao Fu,Ran He,Tian Tong,Zihang Liu,Wuyang Ren,Wuyang Ren,Li You,Li You,Zhiming Wang,Jun Luo,Andrei Sotnikov,Jiming Bao,Kornelius Nielsch,Gang Chen,David J. Singh,Zhifeng Ren +24 more
TL;DR: The authors apply the inverse design approach to identify and experimentally realize TaFeSb-based half Heuslers with high thermoelectric performance and demonstrate that the TaFe Sb- based half-Heuslers are highly promising for thermoelectedric power generation.
Journal ArticleDOI
Grain boundary dominated charge transport in Mg3Sb2-based compounds
Jimmy Jiahong Kuo,Stephen Dongmin Kang,Stephen Dongmin Kang,Kazuki Imasato,Hiromasa Tamaki,Saneyuki Ohno,Saneyuki Ohno,Saneyuki Ohno,Tsutomu Kanno,G. Jeffrey Snyder +9 more
TL;DR: In this paper, the grain boundary region is considered as an effectively separate phase rather than a scattering center, taking into account the weaker screening in semiconductors compared with classical metals.
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