Measurement of mobility in dual-gated MoS2 transistors
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"Measurement of mobility in dual-gat..." refers background in this paper
... 3Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA. *email:mfuhrer@umd.edu; jh2228@columbia.edu. Figure 1. (a) Schematic of MoS 2 dual-gated transistor in Ref. [3] showing capacitances discussed in text. Drawing is not to scale. (b) Drain current vs. gate voltage for single-layer MoS 2 transistor with gate voltage applied to back gate with top gate disconnected...
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"Measurement of mobility in dual-gat..." refers background in this paper
...-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO 2 yielded mobility of 1-50 cm2/Vs for few-layer MoS 2[1, 2]. However, greatly increased mobility – as high as 900 cm2/Vs – was recently reported for monolayer MoS 2 by Radisavljevic, et al.[Ref. 3; see also Refs. 4-6], and for multilayer MoS 2 by others7, 8, ...
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