Medium Voltage (13.8 kV) Transformer-less Grid-Connected DC/AC Converter Design and Demonstration Using 10 kV SiC MOSFETs
Reads0
Chats0
TLDR
In this paper, a 5-level MMC based transformerless dc/ac converter is developed for 13.8 kV medium voltage grid using 10 kV SiC MOSFETs.Abstract:
Medium voltage (MV) power converters using high voltage (HV) Silicon Carbide (SiC) power semiconductors result in great benefits in weight, size, efficiency and control bandwidth. However, challenges still exist on the components design considering HV insulation and noise immunity requirements in the MV SiC based power converter. A 5-level MMC based transformer-less grid-connected dc/ac converter is developed for 13.8 kV medium voltage grid using 10 kV SiC MOSFETs. The key components, including gate driver with high dv/dt immunity and fast reliable protection, isolated power supply with low parasitic capacitance, voltage/current sensors with high noise immunity, and passives following related insulation standard are provided. A 25 kV dc-link phase-leg is demonstrated, and the experimental results are presented.read more
Citations
More filters
Journal ArticleDOI
Power Cell Design and Assessment Methodology Based on a High-Current 10-kV SiC MOSFET Half-Bridge Module
Slavko Mocevic,Jianghui Yu,Yue Xu,Joshua Stewart,Jun Wang,Igor Cvetkovic,Dong Dong,Rolando Burgos,Dushan Boroyevich +8 more
TL;DR: This article aims to develop a DAM based on a high-current 10-kV SiC MOSFET half-bridge module capable of continuous operation under 6 kV, 84-A rms, and 10 kHz, exhibiting 99.3% efficiency and transient immunity up to 100 V/ns.
Journal ArticleDOI
Current-Source Solid-State DC Transformer Integrating LVDC Microgrid, Energy Storage, and Renewable Energy Into MVDC Grid
TL;DR: In this article, a switch reduction scheme on reverse-blocking device bridges is proposed to reduce device count and the number of devices on the dc-link current path, which can be applied to the dc ports of dc-ac, ac-dc, or dc-dc hardswitching or soft-switching CSC-based SSTs.
Journal ArticleDOI
Analysis of Voltage Sharing of Series-Connected SiC MOSFETs and Body-Diodes
TL;DR: In this paper, the impact of parasitic capacitors on the voltage sharing of series-connected SiC MOSFETs and body-diodes was analyzed and shown to be a serious issue in medium-voltage power conversion applications.
Journal ArticleDOI
Current-Source Solid-State DC Transformer Integrating LVDC Microgrid, Energy Storage, and Renewable Energy Into MVDC Grid
TL;DR: In this article , a switch reduction scheme on reverse-blocking device bridges is proposed to reduce device count and the number of devices on the dc-link current path, which can be applied to the dc ports of dc-ac, ac-dc, or dc-dc hardswitching or soft-switching CSC-based SSTs.
Journal ArticleDOI
Hybrid Voltage Balancing Approach for Series-Connected SiC MOSFETs for DC–AC Medium-Voltage Power Conversion Applications
TL;DR: In this paper , the authors proposed a new hybrid approach to achieve voltage balancing control of series-connected SiC mosfets for ac current, where one small compensation capacitor is applied to balance the measured nonuniform distribution of parasitic capacitors.
References
More filters
Proceedings ArticleDOI
Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
John W. Palmour,Lin Cheng,Vipindas Pala,Edward Van Brunt,Daniel J. Lichtenwalner,Gangyao Wang,Jim Richmond,Michael J. O'Loughlin,Sei-Hyung Ryu,Scott Allen,Albert A. Burk,Charles Scozzie +11 more
TL;DR: In this article, the 4H-SiC MOSFETs were further optimized for high power, high-frequency, and high-voltage energy conversion and transmission applications and achieved new breakthrough performance for voltage ratings from 900 V up to 15 kV.
Journal ArticleDOI
Overview of high voltage sic power semiconductor devices: development and application
Shiqi Ji,Zheyu Zhang,Fred Wang +2 more
TL;DR: In this paper, the development and status of high voltage (HV) silicon carbide (SiC) power semiconductor devices has attracted much attention in recent years, and the technologies and challenges for HV SiC device application in converter design are discussed.
Journal ArticleDOI
Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET
TL;DR: In this paper, the temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET including the static characteristics and switching performance are carried out in a double pulse test platform.
Journal ArticleDOI
Short-Circuit Characterization and Protection of 10-kV SiC mosfet
Shiqi Ji,Marko Laitinen,Xingxuan Huang,Jingjing Sun,William Giewont,Fei Wang,Leon M. Tolbert +6 more
TL;DR: In this paper, a temperature-dependent short-circuit performance of a Gen3 10-kV/20-A silicon carbide (SiC) mosfet was analyzed.
Journal ArticleDOI
Selection methods of main circuit parameters for modular multilevel converters
TL;DR: In this article, the authors analyzed the parameter design problem of several important elements in the main circuit of the modular multilevel converter (MMC), such as the link transformer, the arm reactor, the sub-module (SM) capacitor and the SM power electronic devices.