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Proceedings ArticleDOI

Medium voltage power converter design and demonstration using 15 kV SiC N-IGBTs

TL;DR: In this paper, the authors summarized the different steps that have been undertaken to design medium voltage power converters using the state-of-the-art 15 kV SiC N-IGBTs.
Abstract: This paper summarizes the different steps that have been undertaken to design medium voltage power converters using the state-of-the-art 15 kV SiC N-IGBTs. The 11 kV switching characterization results, 11 kV high dv/dt gate driver validation, and the heat-run test results of the SiC IGBT at 10 kV, 550 W/cm2 (active area) have been recently reported as individual topics. In this paper, it is attempted to link all these individual topics and present them as a complete subject from the double pulse tests to the converter design, for evaluating these novel high voltage power semiconductor devices. In addition, the demonstration results of two-level H-Bridge and three-level NPC converters, both at 10 kV dc input, are being presented for the first-time. Lastly, the performance of two-chip IGBT modules for increased current capability and demonstration of three-level poles, built using these modules, at 10 kV dc input with sine-PWM and square-PWM modulation for rectifier and dc-dc stages of a three-phase solid state transformer are presented.
Citations
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Journal ArticleDOI
Xuan Zhang1, He Li1, Lixing Fu1, Mico Perales, John Wu, Jin Wang1 
TL;DR: In this paper, a 15kV silicon carbide (SiC) MOSFET gate drive is presented, which features high commonmode (CM) noise immunity, small size, light weight, and robust yet flexible protection functions.
Abstract: This paper presents a 15kV silicon carbide (SiC) MOSFET gate drive, which features high common-mode (CM) noise immunity, small size, light weight, and robust yet flexible protection functions. To enhance the gate-drive power reliability, a power over fiberbased isolated power supply is designed to replace the traditional design based on isolation transformer. It delivers the gate-drive power by laser light via optical fiber over a long distance (>1 m), so a high isolation voltage (>20 kV) is achieved, and the circuit size and weight are reduced. More importantly, it eliminates the parasitic CM capacitance coupling the power stage and control stage, and thus eradicates the control signal distortion caused by high dv/dt in switching transients of the high-voltage SiC devices. In addition, the gate-drive circuit design integrates comprehensive protection functions, including the overcurrent protection, undervoltage/overvoltage lockout, active miller clamping, soft turn off, and fault report. The overcurrent protection responds within 400 ns. The experimental results from a 15kV double-pulse tester are presented to validate the design.

117 citations

Journal ArticleDOI
TL;DR: The solid-state transformer (SST) is a promising power electronics solution that provides voltage regulation, reactive power compensation, dc-sourced renewable integration, and communication capabilities, in addition to the traditional step-up/stepdown functionality of a transformer as mentioned in this paper.
Abstract: The solid-state transformer (SST) is a promising power electronics solution that provides voltage regulation, reactive power compensation, dc-sourced renewable integration, and communication capabilities, in addition to the traditional step-up/step-down functionality of a transformer. It is gaining widespread attention for medium-voltage (MV) grid interfacing to enable increases in renewable energy penetration, and, commercially, the SST is of interest for traction applications due to its light weight as a result of medium-frequency isolation. The recent advancements in silicon carbide (SiC) power semiconductor device technology are creating a new paradigm with the development of discrete power semiconductor devices in the range of 10-15 kV and even beyond-up to 22 kV, as recently reported. In contrast to silicon (Si) IGBTs, which are limited to 6.5-kV blocking, these high-voltage (HV) SiC devices are enabling much simpler converter topologies and increased efficiency and reliability, with dramatic reductions of the size and weight of the MV power-conversion systems.

101 citations


Cites methods from "Medium voltage power converter desi..."

  • ...The 3L-NPC converter design and demonstration results with 10-kV dc input are presented in [16]....

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Journal ArticleDOI
TL;DR: In this article, the authors present a thorough review of development of SiC IGBT in the past 30 years and summarize the progresses of models, structure design, and performance in SiC ICIGBT.
Abstract: Along with the increasing maturity for the material and process of the wide bandgap semiconductor silicon carbide (SiC), the insulated gate bipolar transistor (IGBT) representing the top level of power devices could be fabricated by SiC successfully This article presents a thorough review of development of SiC IGBT in the past 30 years The progresses of models, structure design, and performance in SiC IGBT are summarized The challenges resulting from fabrication process and switching characteristics are discussed and analyzed in detail The experimental results and existing problems in SiC IGBT-based applications are summarized in the end

75 citations

Proceedings ArticleDOI
20 Mar 2016
TL;DR: In this paper, the development of 15-kV class intelligent universal transformer (IUT) is revealed, and the complete system is split into two stages: (1) highvoltage ac to low-voltage dc and (2) low voltage dc to low voltage ac.
Abstract: This paper discloses the development of 15-kV class intelligent universal transformer (IUT) to show system level design, circuit topology, and prototype test results. The complete system is split into two stages: (1) high-voltage ac to low-voltage dc and (2) low-voltage dc to low-voltage ac. With the adoption of silicon carbide (SiC) devices, the high-voltage front-end ac to low voltage dc conversion stage achieves 98.4% efficiency, and the complete power stage can be naturally cooled. With the adoption of auxiliary resonant soft-switching inverter, the second stage achieves 99.2% efficiency. Overall the system has been demonstrated at 97.5% efficiency without forced-air cooling. Extended 8-hour testing was conducted to ensure long-term operation reliability. Overall efficiency and voltage regulation were compared with that of a conventional transformer for justification of IUT adoption.

65 citations

Journal ArticleDOI
13 Apr 2018
TL;DR: This paper highlights the potential of medium-voltage dc electrification for railway traction by proposing a method for determining the dc voltage level in order to guarantee, in terms of traffic, equivalent performances to an ac-electrified railway line.
Abstract: This paper highlights the potential of medium-voltage dc electrification for railway traction. A method is proposed for determining the dc voltage level in order to guarantee, in terms of traffic, equivalent performances to an ac-electrified railway line. Railroad traffic, type of transport service, and railway network topology being given, the analysis method takes into account the following constraints: voltage at the pantograph, heating of overhead line and rail-to-ground voltage. Once the dc voltage level is chosen, the dc electrification system is compared with a standard 25-kV ac electrification in the case of the French high-speed line from Paris to Strasbourg.

55 citations


Additional excerpts

  • ...10-kV dc input-voltage was tested [28]....

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References
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Journal ArticleDOI
TL;DR: In this article, a transformerless intelligent power substation (TIPS) is proposed as a three-phase SST interconnecting a 13.8 kV distribution grid with a 480 V utility grid.
Abstract: Medium-voltage (MV) SiC devices have been developed recently which can be used for three-phase MV grid tie applications. Two such devices, 15 kV SiC insulated-gate bipolar transistor (IGBT) and 10 kV SiC MOSFET, have opened up the possibilities of looking into different converter topologies for the MV distribution grid interface. These can be used in MV drives, active filter applications, or as the active front end converter for solid-state transformers (SSTs). The transformerless intelligent power substation (TIPS) is one such application for these devices. TIPS is proposed as a three-phase SST interconnecting a 13.8 kV distribution grid with a 480 V utility grid. It is an all SiC device-based multistage SST. This paper focuses on the advantages, design considerations, and challenges associated with the operation of converters using these devices keeping TIPS as the topology of reference. The efficiency of the TIPS topology is also calculated using the experimentally measured loss data of the devices and the high-frequency transformer. Experimental results captured on a developed prototype of TIPS along with its measured efficiency are also given.

307 citations


"Medium voltage power converter desi..." refers background in this paper

  • ...In addition, there have been several papers reporting the control algorithms used for the front-end rectifier stage [11], the dc to dc dual active bridge (DAB) stage [12], and integration of these stages of the TIPS up to 4 kV high voltage dc-link [13]....

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Proceedings ArticleDOI
15 Jun 2014
TL;DR: In this article, the 4H-SiC MOSFETs were further optimized for high power, high-frequency, and high-voltage energy conversion and transmission applications and achieved new breakthrough performance for voltage ratings from 900 V up to 15 kV.
Abstract: Since Cree, Inc.'s 2 nd generation 4H-SiC MOSFETs were commercially released with a specific on-resistance (R ON, SP ) of 5 mΩ·cm 2 for a 1200 V-rating in early 2013, we have further optimized the device design and fabrication processes as well as greatly expanded the voltage ratings from 900 V up to 15 kV for a much wider range of high-power, high-frequency, and high-voltage energy-conversion and transmission applications. Using these next-generation SiC MOSFETs, we have now achieved new breakthrough performance for voltage ratings from 900 V up to 15 kV with a R ON, SP as low as 2.3 mΩ·cm 2 for a breakdown voltage (BV) of 1230 V and 900 V-rating, 2.7 mΩ·cm 2 for a BV of 1620 V and 1200 V-rating, 3.38 mΩ·cm 2 for a BV of 1830 V and 1700 V-rating, 10.6 mΩ·cm 2 for a BV of 4160 V and 3300 V-rating, 123 mΩ·cm 2 for a BV of 12 kV and 10 kV-rating, and 208 mΩ·cm 2 for a BV of 15.5 kV and 15 kV-rating. In addition, due to the lack of current tailing during the bipolar device switching turn-off, the SiC MOSFETs reported in this work exhibit incredibly high frequency switching performance over their silicon counter parts.

236 citations


"Medium voltage power converter desi..." refers methods in this paper

  • ...Very recently, the SiC MOSFETs have been further optimized and scaled-up in voltage to 15 kV [5]....

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Proceedings ArticleDOI
01 Nov 2011
TL;DR: The majority carrier domain of power semiconductor devices has been extended to 10 kV with the advent of SiC MOSFETs and Schottky diodes as mentioned in this paper.
Abstract: The majority carrier domain of power semiconductor devices has been extended to 10 kV with the advent of SiC MOSFETs and Schottky diodes. The devices exhibit excellent static and dynamic properties with encouraging preliminary reliability. Twenty-four MOSFETs and twelve Schottky diodes have been assembled in a 10 kV half H-bridge power module to increase the current handling capability to 120 A per switch without compromising the die-level characteristics. For the first time, a custom designed system (13.8 kV to 465/√3 V solid state power substation) has been successfully demonstrated with these state of the art SiC modules up to 855 kVA operation and 97% efficiency. Soft-switching at 20 kHz, the SiC enabled SSPS represents a 70% reduction in weight and 50% reduction in size when compared to a 60 Hz conventional, analog transformer.

212 citations


Additional excerpts

  • ...The 10 kV SiC N-MOSFETs have been reported and demonstrated for a Solid State Transformer application [1]....

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Proceedings ArticleDOI
28 Oct 2013
TL;DR: In this article, the performance of the 15 kV n-IGBT has been evaluated up to 11 kV. This is the highest switching characterization voltage ever reported on a single power semiconductor device.
Abstract: The 4H-SiC n-IGBT is a promising power semiconductor device for medium voltage power conversion. Currently, Cree has successfully built 15 kV n-IGBTs. These IGBTs are pivotal for the smart grid power conversion systems and medium voltage drives. The need for complex multi-level topologies or series connected devices can be eliminated, while achieving reduced power loss, by using the SiC IGBT. In this paper, characteristics of the 15 kV n-IGBT have been reported for the first time. The turn-on and turn-off transitions of the 15 kV, 20 A IGBT have been experimentally evaluated up to 11 kV. This is highest switching characterization voltage ever reported on a single power semiconductor device. The paper includes static characteristics up to 25 A (forward) and 12 kV (blocking). The dependency of the power loss with voltage, current and temperature are provided. In addition, the basic converter design considerations using this ultrahigh voltage IGBT for high power conversion applications are presented. Also, a comparative evaluation is reported with an IGBT with thicker field-stop buffer layer as a means to show flexibility in choosing the IGBT design parameters based on the power converter frequency and power rating specification. Finally, power loss comparison of the IGBTs and MOSFET is provided to consummate the results for a complete reference.

93 citations


"Medium voltage power converter desi..." refers background in this paper

  • ...Based on the switching characterization results, it was found that the dv/dt of the SiC IGBTs is about 100 kV/μs, at the beginning of the turn-on transition [3]....

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  • ...The switching characteristics of the 15 kV N-IGBTs with comparison of fieldstop buffer layer thicknesses of 2 μm and 5 μm have been reported in [3]....

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  • ...The 15 kV SiC N-IGBT co-pack module [3]....

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  • ...The detailed switching data at higher temperature, different currents are shown in [3], [8]....

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Proceedings ArticleDOI
01 Nov 2011
TL;DR: In this paper, the authors proposed a power topology for a solid state transformer (SST) with new 15kV SiC IGBT devices, where the targeted efficiency of the proposed SST is 98%.
Abstract: Basic power topology for a Solid State Transformer (SST) with new 15kV SiC IGBT devices is discussed. It is difficult to build high efficient, light weight, magnetically isolated solid state transformer for high voltage (13.8 kV) grid connectivity with existing Si 6.5kV rated IGBTs and diodes. Existing state of the art high voltage (6.5kV), high speed power devices (IGBT) cause considerable amount of loss (switching and conduction loss). With the advent of SiC devices these limitations are largely mitigated and this provides the motivation for new power topologies. The targeted efficiency of the proposed SST is 98%.Simulation results for a 1 MVA proposed SST topology is presented.

75 citations


"Medium voltage power converter desi..." refers background in this paper

  • ...8 kV to 480 V Solid State Transformer (SST), referred as Transformerless Intelligent Power Substation (TIPS) [6]....

    [...]