Memristor-capacitor based startup circuit for voltage reference generators.
01 Dec 2014-pp 1858-1861
TL;DR: The theoretical equations describing the switching behavior of memristor are derived and a startup circuit based on series combination of Memristor-capacitor is proposed, which shows no significant difference in switching time when compared with resistance based startup circuit.
Abstract: This paper presents the design of Memristor-capacitor based startup circuit. Memristor is a novel device and has many advantages over conventional CMOS devices such as no leakage current and is easy to manufacture. In this work the switching characteristics of memristor is utilized. First the theoretical equations describing the switching behavior of memristor are derived. To prove the switching capabilities of Memristor, a startup circuit based on series combination of Memristor-capacitor is proposed. This circuit is compared with the reference circuit (which utilizes resistor in place of memristor) and the previously reported MOSFET based startup circuits. Comparison of different circuits was done to validate the results. Simulation results shows that memristor based circuit attains on (I = 2.25 mA) to off state (I = 10 μA) in 2.8 ns while the MOSFET based startup circuits takes (I = 1 mA) to off state (I = 10 μA) in 55.56 ns. However no significant difference in switching time was observed when compared with resistance based startup circuit. The benefit comes in terms of area because much larger die area is required for manufacturing of resistance in comparison to fabrication of memristor.
Citations
More filters
28 Sep 2015
TL;DR: The feasibility of using memristive loads as a replacement of semiconductor resistors in simplistic current mirror configuration is reported and power, area and total harmonic distribution are reported, and the corner conditions on resistance tolerances are reported.
Abstract: Simple current mirrors with semiconductor resistive loads suffer from large on-chip area, leakage currents and thermal effects. In this paper, we report the feasibility of using memristive loads as a replacement of semiconductor resistors in simplistic current mirror configuration. We report power, area and total harmonic distribution, and report the corner conditions on resistance tolerances.
25 citations
Cites background from "Memristor-capacitor based startup c..."
...One of the major limitation in a simple current mirror with resistive loads is the practical realization of resistors is the cost of large area on chip, reverse leakage currents and large variability in resistors values....
[...]
Proceedings Article•
01 Aug 2018TL;DR: In this paper, a simple design for improving the tanh-like passive resistive-type neuron by introducing memristor was proposed, which reduces the total power, area of the chip and THD level.
Abstract: Sigmoid and hyperbolic tangent functions are the computational elements of neural networks, which are applied very widely. This paper aims to propose a simple design for improving the tanh-like passive resistive-type neuron by introducing memristor. Minimal leakage current and small on-chip area, low power consumption and non-volatile memory are the features that make the memristor promising and powerful tool in circuit design. However since memristive devices are not capable to supply energy to a circuit, they should be coupled with conventional CMOS devices, thus forming hybrid circuit configurations. In the frame of this study, we examine the previously proposed circuit for passive neuron. The elements are replaced by memristor to produce tanh activation function. The most efficient circuit configuration in terms performance metrics is to be determined. Our design proves that replacing CMOS device by memristor element improves the circuit performance by reducing the total power, area of the chip and THD level.
1 citations
1 citations
References
More filters
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Abstract: Anyone who ever took an electronics laboratory class will be familiar with the fundamental passive circuit elements: the resistor, the capacitor and the inductor. However, in 1971 Leon Chua reasoned from symmetry arguments that there should be a fourth fundamental element, which he called a memristor (short for memory resistor). Although he showed that such an element has many interesting and valuable circuit properties, until now no one has presented either a useful physical model or an example of a memristor. Here we show, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage. These results serve as the foundation for understanding a wide range of hysteretic current-voltage behaviour observed in many nanoscale electronic devices that involve the motion of charged atomic or molecular species, in particular certain titanium dioxide cross-point switches.
8,971 citations
TL;DR: In this article, the memristor is introduced as the fourth basic circuit element and an electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented.
Abstract: A new two-terminal circuit element-called the memristorcharacterized by a relationship between the charge q(t)\equiv \int_{-\infty}^{t} i(\tau) d \tau and the flux-linkage \varphi(t)\equiv \int_{- \infty}^{t} v(\tau) d \tau is introduced as the fourth basic circuit element. An electromagnetic field interpretation of this relationship in terms of a quasi-static expansion of Maxwell's equations is presented. Many circuit-theoretic properties of memistors are derived. It is shown that this element exhibits some peculiar behavior different from that exhibited by resistors, inductors, or capacitors. These properties lead to a number of unique applications which cannot be realized with RLC networks alone. Although a physical memristor device without internal power supply has not yet been discovered, operational laboratory models have been built with the help of active circuits. Experimental results are presented to demonstrate the properties and potential applications of memristors.
7,585 citations
"Memristor-capacitor based startup c..." refers background in this paper
...Memristor is a passive two port element with variable resistance [5]....
[...]
01 Feb 1976
TL;DR: In this article, a broad generalization of memristors to an interesting class of nonlinear dynamical systems called memristive systems is introduced, which are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics.
Abstract: A broad generalization of memristors--a recently postulated circuit element--to an interesting class of nonlinear dynamical systems called memristive systems is introduced. These systems are unconventional in the sense that while they behave like resistive devices, they can be endowed with a rather exotic variety of dynamic characteristics. While possessing memory and exhibiting small-signal inductive or capacitive effects, they are incapable of energy discharge and they introduce no phase shift between the input and output waveforms. This zero-crossing property gives rise to a Lissajous figure which always passes through the origin. Memristive systems are hysteretic in the sense that their Lissajous figures vary with the excitation frequency. At very low frequencies, memristive systems are indistinguishable from nonlinear resistors while at extremely high frequencies, they reduce to linear resistors. These anomalous properties have misled and prevented the identification of many memristive devices and systems-including the thermistor, the Hodgkin-Huxley membrane circuit model, and the discharge tubes. Generic properties of memristive systems are derived and a canonic dynamical system model is presented along with an explicit algorithm for identifying the model parameters and functions.
2,159 citations
"Memristor-capacitor based startup c..." refers background in this paper
...Kang have given theoretical frame work for describing the memrisitve system [6]....
[...]
...The basic equation of current controlled memrisitve system is given below [6]:...
[...]
Journal Article•
TL;DR: It is shown that the hitherto published approaches to the modeling of boundary conditions need not conform with the requirements for the behavior of a practical circuit element, and the described SPICE model of the memristor is constructed as an open model, enabling additional modifications of non-linear boundary conditions.
Abstract: A mathematical model of the prototype of memristor, manufactured in 2008 in Hewlett-Packard Labs, is described in the paper. It is shown that the hitherto published approaches to the modeling of boundary conditions need not conform with the requirements for the behavior of a practical circuit element. The described SPICE model of the memristor is thus constructed as an open model, enabling additional modifications of non-linear boundary conditions. Its functionality is illustrated on computer simulations.
1,025 citations
"Memristor-capacitor based startup c..." refers methods in this paper
...Biolek suggested a window function [4] and the same is used in the simulations:...
[...]
TL;DR: In this paper, the properties of a single memristor, as well as ideal memristors in series and parallel, are presented, and simple models are presented which show that these unusual properties are closely related to the internal dynamics of the Memristor's internal dynamics.
Abstract: We present a tutorial on the properties of the new ideal circuit element, a memristor. By definition, a memristor M relates the charge q and the magnetic flux $\phi$ in a circuit, and complements a resistor R, a capacitor C, and an inductor L as an ingredient of ideal electrical circuits. The properties of these three elements and their circuits are a part of the standard curricula. The existence of the memristor as the fourth ideal circuit element was predicted in 1971 based on symmetry arguments, but was clearly experimentally demonstrated just this year. We present the properties of a single memristor, memristors in series and parallel, as well as ideal memristor-capacitor (MC), memristor-inductor (ML), and memristor-capacitor-inductor (MCL) circuits. We find that the memristor has hysteretic current-voltage characteristics. We show that the ideal MC (ML) circuit undergoes non-exponential charge (current) decay with two time-scales, and that by switching the polarity of the capacitor, an ideal MCL circuit can be tuned from overdamped to underdamped. We present simple models which show that these unusual properties are closely related to the memristor's internal dynamics. This tutorial complements the pedagogy of ideal circuit elements (R,C, and L) and the properties of their circuits.
722 citations
"Memristor-capacitor based startup c..." refers background or methods in this paper
...Radwan has extended the theoretical framework given by Joglekar and Wang [8],[9] to investigate the memristance resistance under DC excitation [10]....
[...]
...In order to analyze the behaviour of TiO2 based memristor resistance with respect to time we have used the equations given by Joglekar and Wang [8],[9]:...
[...]