Journal ArticleDOI
Memristor―CMOS Hybrid Integrated Circuits for Reconfigurable Logic
Qiangfei Xia,Warren Robinett,Cumbie Michael W,Neel Banerjee,Thomas J. Cardinali,Jianhua Yang,Wei Wu,Xuema Li,William M. Tong,Dmitri B. Strukov,Gregory S. Snider,Gilberto Medeiros-Ribeiro,R. Stanley Williams +12 more
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TLDR
Hybrid reconfigurable logic circuits were fabricated by integrating memristor-based crossbars onto a foundry-built CMOS (complementary metal-oxide-semiconductor) platform using nanoimprint lithography, as well as materials and processes that were compatible with the CMOS.Abstract:
Hybrid reconfigurable logic circuits were fabricated by integrating memristor-based crossbars onto a foundry-built CMOS (complementary metal-oxide-semiconductor) platform using nanoimprint lithography, as well as materials and processes that were compatible with the CMOS Titanium dioxide thin-film memristors served as the configuration bits and switches in a data routing network and were connected to gate-level CMOS components that acted as logic elements, in a manner similar to a field programmable gate array We analyzed the chips using a purpose-built testing system, and demonstrated the ability to configure individual devices, use them to wire up various logic gates and a flip-flop, and then reconfigure devicesread more
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Journal ArticleDOI
Memristive devices for computing
TL;DR: The performance requirements for computing with memristive devices are examined and how the outstanding challenges could be met are examined.
Journal ArticleDOI
Training and operation of an integrated neuromorphic network based on metal-oxide memristors
Mirko Prezioso,Farnood Merrikh-Bayat,Brian D. Hoskins,Gina C. Adam,Konstantin K. Likharev,Dmitri B. Strukov +5 more
TL;DR: The experimental implementation of transistor-free metal-oxide memristor crossbars, with device variability sufficiently low to allow operation of integrated neural networks, in a simple network: a single-layer perceptron (an algorithm for linear classification).
Journal ArticleDOI
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
TL;DR: A comprehensive review of the recent progress in the so-called resistive random access memories (RRAMs) can be found in this article, where a brief introduction is presented to describe the construction and development of RRAMs, their potential for broad applications in the fields of nonvolatile memory, unconventional computing and logic devices, and the focus of research concerning RRAMS over the past decade.
Journal ArticleDOI
Emerging memories: resistive switching mechanisms and current status.
Doo Seok Jeong,Reji Thomas,Ram S. Katiyar,James F. Scott,Hermann Kohlstedt,A. Petraru,Cheol Seong Hwang +6 more
TL;DR: The review ends with the current status of RRAMs in terms of stability, scalability and switching speed, which are three important aspects of integration onto semiconductors.
Journal ArticleDOI
Memristive crossbar arrays for brain-inspired computing
Qiangfei Xia,Jianhua Yang +1 more
TL;DR: The challenges in the integration and use in computation of large-scale memristive neural networks are discussed, both as accelerators for deep learning and as building blocks for spiking neural networks.
References
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Journal ArticleDOI
Cramming More Components Onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as mentioned in this paper. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
The missing memristor found
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
Journal Article
Cramming More Components onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as discussed by the authors. But the biggest potential lies in the production of large systems.
Journal ArticleDOI
Imprint of sub-25 nm vias and trenches in polymers
TL;DR: In this article, a nanoimprint process that presses a mold into a thin thermoplastic polymer film on a substrate to create vias and trenches with a minimum size of 25 nm and a depth of 100 nm has been demonstrated.
Journal ArticleDOI
Memristive switching mechanism for metal/oxide/metal nanodevices.
Jianhua Yang,Matthew D. Pickett,Xuema Li,Douglas A. A. Ohlberg,Duncan Stewart,R. Stanley Williams +5 more
TL;DR: Experimental evidence is provided to support this general model of memristive electrical switching in oxide systems, and micro- and nanoscale TiO2 junction devices with platinum electrodes that exhibit fast bipolar nonvolatile switching are built.