Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications.
Soumava Ghosh,Kuan-Chih Lin,Cheng-Hsun Tsai,Harshvardhan Kumar,Qimiao Chen,Lin Zhang,Bongkwon Son,Chuan Seng Tan,Munho Kim,Bratati Mukhopadhyay,Guo-En Chang +10 more
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TLDR
The design, growth, and characterization of GeSn MSM PDs that are suitable for photonic integrated circuits are presented and it is shown that the spectral responsivity increases with an increase in bias voltage caused by the high electric field, which enhances the carrier generation rate and the carrier collection efficiency.Abstract:
Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of the planar fabrication technique. In this article, we present the design, growth, and characterization of GeSn MSM PDs that are suitable for photonic integrated circuits. The introduction of 4% Sn in the GeSn active region also reduces the direct bandgap and shows a redshift in the optical responsivity spectra, which can extend up to 1800 nm wavelength, which means it can cover the entire telecommunication bands. The spectral responsivity increases with an increase in bias voltage caused by the high electric field, which enhances the carrier generation rate and the carrier collection efficiency. Therefore, the GeSn MSM PDs can be a suitable device for a wide range of short-wave infrared (SWIR) applications.read more
Citations
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Design and Modeling of High-Performance DBR-Based Resonant-Cavity-Enhanced GeSn Photodetector for Fiber-Optic Telecommunication Networks
TL;DR: In this article, a distributed Bragg reflector (DBR)-based resonant-cavity-enhanced (RCE) GeSn photodetector on Si substrates was proposed to achieve high-performance photoderetection in terms of responsivity and 3-dB bandwidth for the short-wave infrared (SWIR) high-speed applications.
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GeSn-Based Multiple-Quantum-Well Photodetectors for Mid-Infrared Sensing Applications
TL;DR: In this paper , the authors presented the theory and simulation of heterojunction p-i-n MIR photodetectors (PDs) with Ge0.87Sn0.13/Ge0.92Sn 0.09 layer to elongate the photoabsorption path in the MIR spectrum.
Journal ArticleDOI
Flexible Titanium Nitride/Germanium-Tin Photodetectors Based on Sub-Bandgap Absorption.
Shu An,Yikai Liao,Munho Kim +2 more
TL;DR: In this article, the authors reported an enhanced performance of flexible titanium nitride/germanium-tin (TiN/GeSn) photodetectors (PDs) with an extended photoderivergence range based on sub-bandgap absorption.
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Optimization of different structural parameters of GeSn/SiGeSn Quantum Well Infrared Photodetectors (QWIPs) for low dark current and high responsivity
TL;DR: In this paper, an optimization approach was applied to achieve low dark current along with high responsivity for a GeSn/SiGeSn QWIP, which achieved a low current of 2.35 pA with a peak responsivity of 1.24 A/W at 4.3 µm and a high detectivity of 3.47 µm at 2 µm.
Journal ArticleDOI
Ge(Sn) growth on Si(001) by magnetron sputtering
H. Khelidj,H. Khelidj,Alain Portavoce,M. Bertoglio,Marion Descoins,Loïc Patout,Khalid Hoummada,Anders Hallén,Ahmed Charaï,M.C. Benoudia,Dominique Mangelinck +10 more
TL;DR: In this article, the semi-conductor Ge0.9Sn0.1 was used for magnetron sputtering to produce low-cost and CMOS-compatible relaxed pseudo-coherent layers with x ≥ 0.1.
References
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