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Journal ArticleDOI

Metalorganic chemical vapor deposition of III‐V semiconductors

15 Oct 1985-Journal of Applied Physics (American Institute of Physics)-Vol. 58, Iss: 8
TL;DR: In this paper, the metalorganic chemical vapor deposition (MOCVD) of epitaxial III-V semiconductor alloys on III-v substrates is reviewed in detail.
Abstract: The metalorganic chemical vapor deposition (MOCVD) of epitaxial III‐V semiconductor alloys on III‐V substrates is reviewed in detail. The emphasis is placed on both practical and theoretical knowledge of the equipment and deposition process. The chemistry of the source alkyls and the dynamics of the transport process are discussed. The growth of the GaAs and AlxGa1−xAs systems are treated as prototypical examples (and the most studied) of the III‐V materials. Latter sections review InP, Ga1−xInxAs, and related alloys. Finally, the antimonide and the other systems are reviewed. Electronic and optical devices fabricated from MOCVD‐grown materials are used as examples of the capabilities of the growth technique.
Citations
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Journal ArticleDOI
15 Dec 1995-Science
TL;DR: In this article, a solution-liquid-solid mechanism for the growth of InP, InAs, and GaAs is described that uses simple, low-temperature (≤203°C), solution-phase reactions.
Abstract: Until now, micrometer-scale or larger crystals of the III-V semiconductors have not been grown at low temperatures for lack of suitable crystallization mechanisms for highly covalent nonmolecular solids. A solution-liquid-solid mechanism for the growth of InP, InAs, and GaAs is described that uses simple, low-temperature (≤203°C), solution-phase reactions. The materials are produced as polycrystalline fibers or near-single-crystal whiskers having widths of 10 to 150 nanometers and lengths of up to several micrometers. This mechanism shows that processes analogous to vapor-liquid-solid growth can operate at low temperatures; similar synthesis routes for other covalent solids may be possible.

1,024 citations

Journal ArticleDOI
TL;DR: In this article, a selective conversion of high composition (AlAs)x(GaAs)1−x layers into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400 °C) is presented.
Abstract: Data are presented on the conversion (selective conversion) of high‐composition (AlAs)x(GaAs)1−x layers, e.g., in AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices (SLs), into dense transparent native oxide by reaction with H2O vapor (N2 carrier gas) at elevated temperatures (400 °C). Hydrolyzation oxidation of a fine‐scale AlAs(LB)‐GaAs(Lz) SL (LB +Lz≲100 A), or random alloy AlxGa1−xAs (x≳0.7), is observed to proceed more slowly and uniformly than a coarse‐scale ‘‘alloy’’ such as an AlAs‐GaAs superlattice with LB + Lz≳200 A.

561 citations

Journal ArticleDOI
Thomas H. Wood1
TL;DR: In this article, a review of the last few years in this field and some future directions is presented. But the authors do not discuss the use of MQW's in optical modulators.
Abstract: Because the electroabsorption effect in semiconductor multiple quantum well material is approximately 50 times larger than in bulk semiconductors, significant interest has been generated in the use of MQW's in optical modulators Small high-speed devices have been made which show promise for external modulators in optical transmission systems, as well as for encoding and processing components in optical interconnect and signal processing systems The fact that these modulators are made from III-V semiconductors had led to interest in integration of these components with other active optoelectronic components Although most devices have operated with light of a wavelength of 085 mu m, recently much progress has been made in applying this technology to devices operating near 155 mu m The author reviews the work of the last few years in this field and indicates some future directions >

268 citations

Journal ArticleDOI
TL;DR: In this paper, the growth kinetics of GaN layers were discussed by developing a tentative model, and the results showed that GaN has better crystallinity and higher Zn incorporation efficiency than those on the (0112) and (0001) sapphire.
Abstract: Gallium‐nitride single crystals were grown on (0001)‐ and (0112)‐oriented sapphire substrates by metalorganic vapor‐phase epitaxy. Smooth‐surfaced layers with fine ridgelike facets can be obtained on the (0112) sapphire. They have lower carrier concentrations than the layers on the (0001) sapphire. Deep centers responsible for blue (∼425 nm) and yellow (∼560 nm) emissions from undoped layers are reduced on the (0112) substrates, as compared with the (0001) substrates. On the other hand, the layers on the (0001) sapphire have better crystallinity and higher Zn‐incorporation efficiency than those on the (0112) sapphire. Growth kinetics of GaN layers are discussed by developing a tentative model.

185 citations

Journal ArticleDOI
TL;DR: In the subsequent nonmolecular component of the pathway, the resulting (InP)n fragments dissolve into a dispersion of molten In droplets, and recrystallize as the InP fibers.
Abstract: Methanolysis of {t-Bu2In[μ-P(SiMe3)2]}2 (1) in aromatic solvents gives polycrystalline InP fibers (dimensions 10−100 nm × 50−1000 nm) at 111−203 °C. The chemical pathway consists of a molecular component, in which precursor substituents are eliminated, and a nonmolecular component, in which the InP crystal lattices are assembled. The two components working in concert comprise the solution−liquid−solid (SLS) mechanism. The molecular component proceeds through a sequence of isolated and fully characterized intermediates: 1 → [t-Bu2In(μ-OMe)]2 (2) → [t-Bu2In(μ-PHSiMe3)]2 (3) → 2 → [t-Bu2In(μ-PH2)]3 (4). Complex 4, which is alternatively prepared from t-Bu3In and PH3, undergoes alkane elimination, the last steps of which are catalyzed by the protic reagent MeOH, PhSH, Et2NH, or PhCO2H. In the subsequent nonmolecular component of the pathway, the resulting (InP)n fragments dissolve into a dispersion of molten In droplets, and recrystallize as the InP fibers. Important criteria are identified for crystal growt...

167 citations

References
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Journal ArticleDOI
TL;DR: The thermal expansion of AlN, cubic BN, and BP has been measured from 77 to 1300 K by x−ray techniques as mentioned in this paper, and the derived thermal expansion coefficients are compared with those of diamond, Si, Ge, SiC, GaP, and BeO using the Debye temperature as a scaling parameter.
Abstract: The thermal expansion of AlN, cubic BN, and BP has been measured from 77 to 1300 K by x−ray techniques The derived thermal expansion coefficients are compared with those of diamond, Si, Ge, SiC, GaP, and BeO using the Debye temperature as a scaling parameter It is apparent that the thermal expansion of Si is the smallest, SiC is intermediate, and all of the others are larger The thermal expansion of Mo and W is also reviewed in order to determine how well these metals match the thermal expansion of the adamantine or diamondlike crystals

648 citations

Journal ArticleDOI
TL;DR: In this article, a single-crystal growth of gallium arsenide was achieved on a number of singlecrystal insulating oxide substrates, including sapphire, spinel, beryllium oxide, and thorium oxide.
Abstract: Chemical vapor deposition has been been used successfully for the attainment of a single‐crystal growth of gallium arsenide directly on a number of single‐crystal insulating oxide substrates. Several orientation relationships have been determined for GaAs grown on sapphire (α‐Al2O3), spinel (MgAl2O4), beryllium oxide (BeO), and thorium oxide (ThO2).

373 citations

Journal ArticleDOI
TL;DR: In this article, the decomposition of alkyl-gallium compounds in the presence of arsine, phosphine, arsinesinephosphine, and stibine mixtures has been used for compound semiconductor film growth compatible with methods used for the growth of elemental semiconductors.
Abstract: Single‐crystal , , and films have been grown on and a number of insulating substrates by the decomposition of alkyl‐gallium compounds in the presence of arsine, phosphine, arsine‐phosphine, and arsine‐stibine mixtures. Both triethylgallium and trimethylgallium have been used successfully in the preparation of . This process makes compound semiconductor film growth compatible with methods used for the growth of elemental semiconductors and eliminates many of the difficulties inherent in multitemperature‐zone processes.

313 citations

Journal ArticleDOI
TL;DR: In this paper, the importance of lattice-parameter mismatch between the GaAs substrate and the GaxIn1−xP epitaxial layer on crystal growth and properties has been investigated.
Abstract: The importance of lattice‐parameter mismatch between the GaAs substrate and the GaxIn1−xP epitaxial layer on crystal growth and properties has been investigated. Three major effects were observed: (i) The crystal morphology and substrate/epitaxial‐layer interface were found to be nearly perfect for a0 ≈ a0 GaAs and very poor including melt inclusions at the interface for other epitaxial‐layer compositions. (ii) The dislocation density was found to depend on a0 ‐ a0 GaAs varying from 105 to > 108 cm−2. (iii) The excess energy due to lattice‐parameter mismatch was found to perturb the solid composition from the chemical‐equilibrium composition toward the composition which minimizes mismatch; i.e., epitaxial layers with x=0.51±0.01 are grown from Ga–In–P liquids with chemical‐equilibrium solidus compositions ranging from 0.46 to 0.62. The result is that under the growth conditions used, highly perfect epitaxial layers could be grown only near x=0.51 with band gaps near 1.9 eV. Other compositions with EG>1.9 ...

272 citations