Journal ArticleDOI
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
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TLDR
In this article, the growth condition dependence of crystalline quality is also studied, and the narrowest x-ray rocking curve from the (0006) plane is 2.70' and from the 2024 plane is 1.86' on sapphire substrates.Abstract:
Atmospheric pressure metalorganic vapor phase epitaxial growth and characterization of high quality GaN on sapphire (0001) substrates are reported. Using AlN buffer layers, GaN thin films with optically flat surfaces free from cracks are successfully grown. The narrowest x‐ray rocking curve from the (0006) plane is 2.70’ and from the (2024) plane is 1.86’. Photoluminescence spectra show strong near band edge emission. The growth condition dependence of crystalline quality is also studied.read more
Citations
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Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
TL;DR: In this article, the authors compare the performance of SiC, GaN, and ZnSe for high-temperature electronics and short-wavelength optical applications and conclude that SiC is the leading contender for high temperature and high power applications if ohmic contacts and interface state densities can be further improved.
Journal ArticleDOI
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
Michael R. Krames,O.B. Shchekin,Regina B. Mueller-Mach,Gerd O. Mueller,Ling Zhou,Gerard Harbers,M. G. Craford +6 more
TL;DR: In this paper, the status and future outlook of III-V compound semiconductor visible-spectrum light-emitting diodes (LEDs) are presented and light extraction techniques are reviewed.
Journal ArticleDOI
AlGaN/GaN HEMTs-an overview of device operation and applications
TL;DR: This paper attempts to present the status of the technology and the market with a view of highlighting both the progress and the remaining problems of the AlGaN/GaN high-electron mobility transistor.
Journal ArticleDOI
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
TL;DR: In this article, the p-n junction LED using Mg-doped GaN treated with low-energy electron-beam irradiation (LEEBI) was reported for the first time.
Journal ArticleDOI
Prospects for LED lighting
TL;DR: More than one-fifth of US electricity is used to power artificial lighting as discussed by the authors and light-emitting diodes based on group III/nitride semiconductors are bringing about a revolution in energy-efficient lighting.
References
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Journal ArticleDOI
The preparation and properties of vapor- deposited single-crystalline GaN
H. P. Maruska,J. J. Tietjen +1 more
TL;DR: Vapor deposited GaN single crystals tested for electrical and optical properties, determining band gap energy, electron concentration, etc as mentioned in this paper, were tested for testing the properties of single crystals.
Journal ArticleDOI
Mechanism of Yellow Luminescence in GaN
Toshio Ogino,Masaharu Aoki +1 more
TL;DR: The mechanism of the yellow luminescence in GaN has been studied in this paper, where it is observed in microcrystals synthesized from Ga and NH3 by direct reaction, but is not observed in needlelike crystals grown by sublimation-recrystallization.
Journal ArticleDOI
Thermal expansion of AlN, sapphire, and silicon
W. M. Yim,R. J. Paff +1 more
TL;DR: In this article, the thermal expansion coefficients of high-purity AlN, sapphire, and silicon were calculated from the data obtained with precision high-temperature x-ray lattice parameter measurements.
Journal ArticleDOI
Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates
S. Yoshida,S. Misawa,S. Gonda +2 more
TL;DR: In this paper, the electrical and luminescent properties of GaN epitaxial films grown on AlN•coated sapphire by reactive molecular beam epitaxy have been studied.
Journal ArticleDOI
Electrical properties of n-type vapor-grown gallium nitride
Marc Ilegems,H.C. Montgomery +1 more
TL;DR: Hall measurements for undoped and Zn-doped vapor-grown single crystal GaN on (0001) Al 2 O 3 layers with 298 K carrier concentrations (n -type) between 1·4×10 17 cm −3 and 9×10 19 cm−3 were reported in this paper.