Patent
Method and apparatus for measuring pattern dimensions
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TLDR
In this paper, an image averaging process without deteriorating cubic shape information of a signal waveform in consideration of dimension deviation of a measurement target pattern is proposed to realize measurement of pattern dimensions and shapes with high precision and control of a highly sensitive semiconductor manufacturing process.Abstract:
It is difficult for a material having low resistance to electron beam irradiation to obtain an electron microscopic image having a high S/N ratio. A conventional image smoothing process can improve stability of measurement, but this process has a problem of measurement errors for absolute values, reduction of sensitivity, deterioration of quality of cubic shape information and the like. In the present invention, by performing an image averaging process without deteriorating cubic shape information of a signal waveform in consideration of dimension deviation of a measurement target pattern, measurement stability is compatible with improvement of precision and sensitivity. Accordingly, it is possible to realize measurement of pattern dimensions and shapes with high precision and control of a highly sensitive semiconductor manufacturing process using the measurement.read more
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Patent
Sample dimension inspecting/measuring method and sample dimension inspecting/measuring apparatus
Abstract: One of principal objects of the present invention is to provide a sample dimension measuring method for detecting the position of an edge of a two-dimensional pattern constantly with the same accuracy irrespective of the direction of the edge and a sample dimension measuring apparatus. According to this invention, to accomplish the above object, it is proposed to correct the change of a signal waveform of secondary electrons which depends on the direction of scanning of an electron beam relative to the direction of a pattern edge of an inspection objective pattern. It is proposed that when changing the scanning direction of the electron beam in compliance with the direction of a pattern to be measured, errors in the scanning direction and the scanning position are corrected. In this configuration, a sufficient accuracy of edge detection can be obtained irrespective of the scanning direction of the electron beam.
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References
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Patent
Pattern inspection apparatus and method
TL;DR: In this article, a pattern inspection apparatus is used for inspecting a fine pattern, such as a semiconductor integrated circuit (LSI), a liquid crystal panel, and a photomask (reticle) for the semiconductor or the liquid crystal panels, which are fabricated based on data for fabricating the fine pattern such as design data.
Proceedings ArticleDOI
Scanning electron microscope analog of scatterometry
TL;DR: In this paper, an analogous and complementary technique for the scanning electron microscope was developed, where the signal is an image rather than a scattering pattern, and the probe particles are electrons rather than photons.
Proceedings ArticleDOI
193-nm CD shrinkage under SEM: modeling the mechanism
TL;DR: In this article, the authors proposed a model that relates physical properties (accelerating voltage, photoresist density, resist e-beam film shrinkage) to the commonly observed CD 'hammer test' shrinkage profiles.
Proceedings ArticleDOI
Impact of long-period line-edge roughness (LER) on accuracy in CD measurement
TL;DR: In this article, the influence of long-period line-edge roughness on measured critical-dimension (CD) values is identified, and a guideline for LER-impact-free CD measurement is introduced.
Proceedings ArticleDOI
Dose and focus estimation using top-down SEM images
Chie Shishido,Ryo Nakagaki,Maki Tanaka,Yuji Takagi,Hidetoshi Morokuma,Osamu Komuro,Hiroyoshi Mori +6 more
TL;DR: In this article, the second stage of an approach towards monitoring the semiconductor photolithogprhay process by using critical dimension-scanning electron microscopy has been presented.