Patent•
Method and apparatus for smoothing thin conductive films by gas cluster ion beam
05 Dec 2000-
TL;DR: In this paper, a method and apparatus is proposed to facilitate the successful and precise smoothing of conductive films on insulating films or substrates, which provides a smooth surface that is substantially free of scratches.
Abstract: A method and apparatus (400) to facilitate the successful and precise smoothing of conductive films on insulating films or substrates (352). The smoothing technique provides a smooth surface that is substantially free of scratches. By supplying a source of electrons (410), harmful charging of the films and damage to the films are avoided.
Citations
More filters
Patent•
08 Oct 2003TL;DR: In this paper, a process gas mixture consisting of less than 6% oxygen, silicon gas, and predominantly hydrogen was used to form an oxide film on a substrate, and a process temperature between 800° C and 1300° C was used.
Abstract: Methods and apparatuses for forming an oxide film. The method includes depositing an oxide film on a substrate using a process gas mixture that comprises a silicon source gas, an oxygen gas, and a hydrogen gas, and a process temperature between 800° C. and 1300° C. During the deposition of the oxide film, the process gas mixture comprises less than 6% oxygen, silicon gas, and predominantly hydrogen.
72 citations
Patent•
09 May 2002
TL;DR: In this paper, the authors applied gas cluster ion beam (GCIB) technology to modify artificial joint component surfaces and reduce wear debris, osteolysis complications, and accelerated wear failure.
Abstract: The present invention applies gas cluster ion beam 'GCIB' technology to modify artificial joint component surfaces and reduce wear debris, osteolysis complications, and accelerated wear failure. A gas cluster particle source (116) produces gas cluster particles to be ionized (122) and accelerated (126). The GCIB is then directed to a non-uniform patterning means (132) to impinge a desired artificial joint (10) with a predetermined dose and distribution of ionized gas cluster particles.
64 citations
Patent•
IBM1
TL;DR: In this paper, a method for repairing process induced dielectric damage from forming an interconnect structure on an inter-layer Dielectric (ILD) material is presented. But the method does not address the problem of the bottom and/or sidewall of the ILD material.
Abstract: When an interconnect structure is built on porous ultra low k (ULK) material, the bottom and/or sidewall of the trench and/or via is usually damaged by a following metallization or cleaning process which may be suitable for dense higher dielectric materials. Embodiments of the present invention may provide a method of repairing process induced dielectric damage from forming an interconnect structure on an inter-layer dielectric (ILD) material. The method includes treating an exposed area of the ILD material to create a carbon-rich area, and metallizing the carbon-rich area. One embodiment includes providing treatment to an exposed sidewall area of the ILD material to create a carbon-rich area by irradiating the exposed area using a gas cluster ion beam (GCIB) generated through a gas including a straight chain or branched, aliphatic or aromatic hydrocarbon, and metallizing the carbon-rich area.
50 citations
Patent•
19 Sep 2003
TL;DR: In this article, an improved beam and workpiece neutralizing components were used to improve beam and particle neutralization of the gas-cluster ion beam processing (GCIB) system.
Abstract: System (350) and method of gas-cluster ion beam processing is realized by incorporating improved beam and workpiece neutralizing components (122) Larger GCIB current transport is enabled by low energy electron neutralization of space charge of the GCIB The larger currents transport greater quantities of gas in the GCIB A vented faraday cup beam measurement system (302) maintains beam dosimetry accuracy despite the high gas transport load
32 citations
Patent•
28 Jun 2006TL;DR: In this paper, an antireflective coating is formed over the semiconductor substrate by applying a positive photoresist on the outer surface which has been treated with the basic treating fluid.
Abstract: This invention comprises methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a semiconductor substrate is provided. An antireflective coating is formed over the semiconductor substrate. The antireflective coating has an outer surface. The outer surface is treated with a basic fluid. A positive photoresist is applied onto the outer surface which has been treated with the basic treating fluid. The positive photoresist is patterned and developed effective to form a patterned photoresist layer having increased footing at a base region of said layer than would otherwise occur in the absence of said treating the outer surface. Other aspects and implementations are contemplated.
26 citations
References
More filters
Patent•
IBM1
TL;DR: In this article, the spin valve effect was defined for a magnetoresistive sensor with a first and a second thin film layer of a magnetic material separated by a thin film of a non-magnetic metallic material.
Abstract: A magnetoresistive (MR) sensor comprising a first and a second thin film layer of a magnetic material separated by a thin film layer of a non-magnetic metallic material. The first ferromagnetic layer is magnetically soft. The magnetization direction of the first layer of magnetic material is set substantially perpendicular to the magnetization of the second layer of magnetic material at zero applied field, and the magnetization direction of the second layer of magnetic material is fixed. A current flow is produced through the MR sensor, and the variations in voltage across the MR sensor are sensed due to changes in resistance of the MR sensor produced by rotation of the magnetization in the first layer of magnetic material as a function of the magnetic field being sensed. The variation of the resistance with the angle between the magnetizations of the first and second layers of magnetic material has been defined as the spin valve (SV) effect. It is also shown that, by a suitable direction of the current with respect to the fixed magnetization, the (SV) magnetoresistance can be added constructively to the usual anisotropic magnetoresistance.
448 citations
TL;DR: In this paper, the effect of the finite thickness of the magnetic films in a spin valve was investigated and the Neel model was used to describe the ferromagnetic magnetostatic interaction with the poles at the inner surface of the opposite layer.
Abstract: Spin valves are widely studied due to their application as magnetoresistive material in magnetic recording heads and other magnetic field sensors. An important film property is the interlayer coupling field (called offset field Ho or ferromagnetic coupling field Hf). It has been shown that the Neel model for orange-peel coupling can be applied successfully to describe this interlayer coupling. The waviness associated with the developing granular structure is thereby taken as the relevant waviness. The original Neel model describes the ferromagnetic magnetostatic interaction between two ferromagnetic layers, of infinite thickness, separated by a nonmagnetic spacer with a correlated interface waviness. In this article, this physical picture is refined to account for the effect of the finite thickness of the magnetic films in a spin valve. Magnetic poles created at the outer surfaces of the magnetic layers result in an antiferromagnetic interaction with the poles at the inner surface of the opposite layer. A...
177 citations
TL;DR: In this article, the effects of current transients on the magnetic response of GMR sensors are studied and it is shown that GMR sensor with an FeMn exchange layer exhibit large magnetic changes after a single ESD current transient.
Abstract: The effects of current transients on the magnetic response of GMR sensors is studied. It is shown that GMR sensors with an FeMn exchange layer exhibit large magnetic changes after a single ESD current transient. The energy which results in magnetic failure is only 0.9 nJ, which is much less than the 6 nJ which causes physical melting damage to the GMR sensor. These serious magnetic changes are explained in terms of resetting of the FeMn exchange layer direction due to the elevated temperature and internal magnetic field during the current transient. It is concluded that ESD stress testing of GMR sensors has revealed a new and important magnetic failure mechanism in GMR sensors.
116 citations
Patent•
30 Jul 1980TL;DR: In this paper, an ion implanter is described with provision for neutralizing the space charge potential of the ionic beam with a closed loop feedback system responding to the electrical charges that tend to accumulate on a target specimen.
Abstract: An ion implanter apparatus is described with provision for neutralizing the space charge potential of the ionic beam with a closed loop feedback system responding to the electrical charges that tend to accumulate on a target specimen. Neutralization is provided by a controllable electron source surrounding the beam. Flow of electrons to a plate radially outward of the electron source is used to derive a signal proportional to the beam ion current when the space charge potential of the beam is neutralized. The beam current signal can be used (1) to provide a read-out display for the operator; (2) to control the magnitude of the ion beam; (3) to be integrated to determine the total positive charge that enters the Faraday cage of the implanter for use to control the ion beam shutter; or (4) to effect relative movement of the specimen and the beam.
100 citations
13 Apr 1992
TL;DR: The giant magnetoresistance effect appears in a number of ultrathin multilayer systems in which thin magnetic films, a few tens of AA thick, are separated by nonmagnetic metal films, also on the order of tens to 1000 AA thick.
Abstract: An introduction to the phenomenon of giant magnetoresistance is presented. It is pointed out that the giant magnetoresistance effect appears in a number of ultrathin multilayer systems in which thin magnetic films, a few tens of AA thick, are separated by nonmagnetic metal films, also on the order of tens of AA thick. For the effect to appear, the primary requirement is that the relative orientation of successive magnetic layers must be susceptible to change by the application of a magnetic field. The basic physical origin of the effect is the differential scattering of electrons parallel to and antiparallel to the local magnetization. This differential scattering arises either from the character of the scattering centers or in the different density of states functions for the two spin species. The giant magnetoresistive effect is of interest because of its potential utility in magnetoresistive read heads in the information storage industry. >
98 citations