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Method for Measuring Small Nonlinearities of Electric Characteristics

T. Guldbrandsen, +2 more
- 01 Jun 1965 - 
- Vol. 36, Iss: 6, pp 743-746
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TLDR
In this paper, a special bridge circuit is used to balance out the undesired harmonics of the signal generator together with the first harmonic frequency, and the set-up measures the small-signal value and the first and second derivative with respect to voltage.
Abstract
A method is described for measuring very small deviations from linearity in electric characteristics. The measurement is based on the harmonics generated by the nonlinear element when subjected to a sine wave signal. A special bridge circuit is used to balance out the undesired harmonics of the signal generator together with the first harmonic frequency. The set‐up measures the small‐signal value and the first and second derivative with respect to voltage. The detailed circuits are given for measuring nonlinearities in Ohmic and capacitive components. In the Ohmic case, a sensitivity in the measurement of the relative second order nonlinearity of about 5×10−8 is obtained. In the capacitive case, the sensitivity expressed in terms of the minimum measurable values of the derivatives is dC/dV = 1.5×10−17 F/V and d2C/dV2 = 2×10−16 F/V2.

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Method for Measuring Small Nonlinearities of Electric Characteristics
Guldbrandsen, Tom; Meyer, Niels I; Schjær-Jacobsen, Jørgen
Published in:
Review of Scientific Instruments
Link to article, DOI:
10.1063/1.1719690
Publication date:
1965
Document Version
Publisher's PDF, also known as Version of record
Link back to DTU Orbit
Citation (APA):
Guldbrandsen, T., Meyer, N. I., & Schjær-Jacobsen, J. (1965). Method for Measuring Small Nonlinearities of
Electric Characteristics. Review of Scientific Instruments, 36(6), 743-746. https://doi.org/10.1063/1.1719690

Downloaded 11 Aug 2009 to 192.38.67.112. Redistribution subject to AIP license or copyright; see http://rsi.aip.org/rsi/copyright.jsp

Downloaded 11 Aug 2009 to 192.38.67.112. Redistribution subject to AIP license or copyright; see http://rsi.aip.org/rsi/copyright.jsp

Downloaded 11 Aug 2009 to 192.38.67.112. Redistribution subject to AIP license or copyright; see http://rsi.aip.org/rsi/copyright.jsp

Downloaded 11 Aug 2009 to 192.38.67.112. Redistribution subject to AIP license or copyright; see http://rsi.aip.org/rsi/copyright.jsp
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References
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Method for measuring impurity distributions in semiconductor crystals

TL;DR: In this article, a method for measuring the doping profile and its gradient in thin layers of semiconductor crystals is described, which relates the second and third harmonic distortion factors to the impurity concentration and their gradient as a function of the distance into the crystal.
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Sensitive Method for the Measurement of Nonlinearity of Electrical Conduction

TL;DR: In this article, a dc component of the current proportional to the coefficient c is measured for deviations from Ohm's law, and the results show that the method and apparatus are capable of measuring these deviations at least down to one part in 108.
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Conductivity anisotropy of warm and hot electrons in silicon and germanium

TL;DR: Theoretical expressions for the coefficients β and γ characterizing the quadratic departure from Ohm's law for dominating acoustical scattering are presented for the case of dominating acoustic scattering.