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Patent

Methods and apparatus for the production of group iv nanoparticles in a flow-through plasma reactor

TL;DR: In this paper, a plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed, which includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer-tube outer surface, wherein the outer-to-outer inner surface has an inner-surface etching rate.
Abstract: A plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed. The apparatus includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer tube outer surface, wherein the outer tube inner surface has an outer tube inner surface etching rate. The apparatus also includes an inner dielectric tube, the inner dielectric tube including an inner tube outer surface, wherein the outer tube inner surface and the inner tube outer surface define an annular channel, and further wherein the inner tube outer surface has an inner tube outer surface etching rate. The apparatus further includes a first outer electrode, the first outer electrode having a first outer electrode inner surface disposed on the outer tube outer surface. The apparatus also includes a first central electrode, the first central electrode being disposed inside the inner dielectric tube, the first central electrode further configured to be coupled to the first outer electrode when a first RF energy source is applied to one of the first outer electrode and the first central electrode; and a first reaction zone defined between the first outer electrode and the central electrode.
Citations
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Patent
07 Jun 2010
TL;DR: In this article, the first injection portion of a vapor deposition reactor is connected to the first space and a recess is maintained to have pressure lower than the pressure in the second space.
Abstract: A vapor deposition reactor and a method for forming a thin film. The vapor deposition reactor includes at least one first injection portion for injecting a reacting material to a recess in a first portion of the vapor deposition reactor. A second portion is connected to the first space and has a recess connected to the recess of the first portion. The recess of the second portion is maintained to have pressure lower than the pressure in the first space. A third portion is connected to the second space, and an exhaust portion is connected to the third space.

45 citations

Patent
13 Aug 2009
TL;DR: In this paper, a vapor deposition reactor includes a reaction module, which includes a first injection unit for injecting a first material onto a substrate, and at least one second injection unit is placed within the first injector unit for inserting a second material onto the substrate.
Abstract: A vapor deposition reactor includes a reaction module includes a first injection unit for injecting a first material onto a substrate. At least one second injection unit is placed within the first injection unit for injecting a second material onto the substrate. The substrate passes the reaction module through a relative motion between the substrate and the reaction module. The vapor deposition reactor advantageously injects a plurality of materials onto the substrate while the substrate passes the reaction module without exposing the substrate to the atmosphere in a chamber.

44 citations

Patent
16 Sep 2009
TL;DR: In this paper, a method for forming thin film using the vapor deposition reactor is presented, where a first electrode including a first channel and at least one first injection hole connected to the first channel is electrically separated from the first electrode, and a power source for applying power between the first and second electrodes to generate plasma from a reactant gas between the two electrodes.
Abstract: A vapor deposition reactor may include a first electrode including a first channel and at least one first injection hole connected to the first channel. a second electrode electrically separated from the first electrode, and a power source for applying power between the first electrode and the second electrode to generate plasma from a reactant gas between the first electrode and the second electrode. Also provided is a method for forming thin film using the vapor deposition reactor.

40 citations

Patent
22 Feb 2010
TL;DR: In this article, a method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursors and a source precursor.
Abstract: A method for forming a thin film using radicals generated by plasma may include generating radicals of a reactant precursor using plasma; forming a first thin film on a substrate by exposing the substrate to a mixture of the radicals of the reactant precursor and a source precursor; exposing the substrate to the source precursor; and forming a second thin film on the substrate by exposing the substrate to the mixture of the radicals of the reactant precursor and the source precursor. Since the substrate is exposed to the source precursor between the formation of the first thin film and the formation of the second thin film, the rate of deposition may be improved.

36 citations

Patent
13 Oct 2011
TL;DR: In this article, the authors proposed to reciprocate a susceptor in two directions, subjecting a substrate on the susceptor to two different sequences of processes by subjecting the substrate to different processes that otherwise would have required an additional set of injectors or reactors.
Abstract: Atomic layer deposition is performed by reciprocating a susceptor in two directions, subjecting a substrate on the susceptor to two different sequences of processes By subjecting the susceptor to different sequences of processes, the substrate undergoes different processes that otherwise would have required an additional set of injectors or reactors The reduced number of injectors or reactors enables a more compact deposition device, and reduces the cost associated with the deposition device

28 citations

References
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Journal ArticleDOI
TL;DR: A scaleable single-step synthesis process for luminescent silicon nanocrystals based on a low-pressure nonthermal plasma is reported, paving the way for a simple, high-yield synthesis approach to this field.
Abstract: Light emission from silicon based on quantum confinement in nanoscale structures has sparked intense research into this field ever since its discovery about 15 years ago A barrier to the widespread utilization of luminescent silicon nanocrystals in such diverse application areas as optoelectronics, solid-state lighting for general illumination, or fluorescent agents for biological applications has been the lack of a simple, high-yield synthesis approach Here we report a scaleable single-step synthesis process for luminescent silicon nanocrystals based on a low-pressure nonthermal plasma

661 citations

Patent
04 Sep 2003
TL;DR: In this article, Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer, where the nanostructures are not necessarily part of a nanocomposition.
Abstract: Nanocomposite photovoltaic devices are provided that generally include semiconductor nanocrystals as at least a portion of a photoactive layer. Photovoltaic devices and other layered devices that comprise core-shell nanostructures and/or two populations of nanostructures, where the nanostructures are not necessarily part of a nanocomposite, are also features of the invention. Varied architectures for such devices are also provided including flexible and rigid architectures, planar and non-planar architectures and the like, as are systems incorporating such devices, and methods and systems for fabricating such devices. Compositions comprising two populations of nanostructures of different materials are also a feature of the invention.

514 citations

Journal ArticleDOI
TL;DR: The structural analysis showed that the materials consist of small crystalline silicon particles surrounded by hydrogen atoms, whose diameters are 20--30 A\r{}.
Abstract: We have succeeded in fabricating the mostly crystallized Si:H materials having a wide optical band gap of up to 2.4 eV by means of a reactive sputtering technique with a low substrate temperature of \ensuremath{\sim}100 K. The structural analysis showed that the materials consist of small crystalline silicon particles surrounded by hydrogen atoms, whose diameters are 20--30 A\r{}. The widening of the optical band gap can be explained by a three-dimensional quantum-well effect in the small particles.

400 citations

Patent
09 Aug 2001
TL;DR: In this article, the improved polymer materials are discussed and fine fiber materials that can be made from the improved polymeric materials in the form of microfiber and nanofiber structures.
Abstract: Disclosed are improved polymer materials. Also disclosed are fine fiber materials that can be made from the improved polymeric materials in the form of microfiber and nanofiber structures. The microfiber and nanofiber structures can be used in a variety of useful applications including the formation of filter materials.

333 citations

PatentDOI
28 Mar 2002
TL;DR: In this paper, a method for the production of a robust, chemically stable, crystalline, passivated nanoparticle and composition containing the same, that emit light with high efficiencies and size-tunable and excitation energy tunable color is presented.
Abstract: A method for the production of a robust, chemically stable, crystalline, passivated nanoparticle and composition containing the same, that emit light with high efficiencies and size-tunable and excitation energy tunable color. The methods include the thermal degradation of a precursor molecule in the presence of a capping agent at high temperature and elevated pressure. A particular composition prepared by the methods is a passivated silicon nanoparticle composition displaying discrete optical transitions.

263 citations