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Book ChapterDOI: 10.1007/978-3-319-97604-4_149

MgZnO Based UV Heterojunction Photodetector Fabricated Using Dual Ion Beam Sputtering

12 Dec 2017-pp 981-984
Abstract: This abstract reports the realization of p-type conduction in Sb (5 at.%): Mg0.10Zn0.90O (SMZO) grown in different growth ambient and then fabrication of SMZO/n-Si based UV heterojunction photodetector grown by dual ion beam sputtering (DIBS) system. The fabricated photodetectors were then probed for the effect of growth ambient using current–voltage (I–V) and photoresponse measurement on photodetector properties. more

Topics: Photodetector (55%), Heterojunction (53%)

Journal ArticleDOI: 10.1063/1.116699
Abstract: By combining electron paramagnetic resonance (EPR), optical absorption, and photoluminescence (PL) spectroscopy, a strong correlation is observed between the green 510 nm emission, the free‐carrier concentration, and the density of singly ionized oxygen vacancies in commercial ZnO phosphor powders. From these results, we demonstrate that free‐carrier depletion at the particle surface, and its effect on the ionization state of the oxygen vacancy, can strongly impact the green emission intensity. The relevance of these observations with respect to low‐voltage field emission displays is discussed. more

Topics: Photoluminescence (56%), Field electron emission (53%), Absorption spectroscopy (52%) more

1,815 Citations

Journal ArticleDOI: 10.1103/PHYSREVLETT.92.155504
Abstract: Based on first-principles calculations, a model for large-size-mismatched group-V dopants in ZnO is proposed. The dopants do not occupy the O sites as is widely perceived, but rather the Zn sites: each forms a complex with two spontaneously induced Zn vacancies in a process that involves fivefold As coordination. Moreover, an As(Zn)-2V(Zn) complex may have lower formation energy than any of the parent defects. Our model agrees with the recent observations that both As and Sb have low acceptor-ionization energies and that to obtain p-type ZnO requires O-rich growth or annealing conditions. more

Topics: Zinc (52%), Antimony (51%), Doping (50%)

574 Citations

Journal ArticleDOI: 10.1063/1.2089183
Abstract: Reproducible Sb-doped p-type ZnO films were grown on n-Si (100) by electron-cyclotron-resonance-assisted molecular-beam epitaxy. The existence of Sb in ZnO:Sb films was confirmed by low-temperature photoluminescence measurements. An acceptor-bound exciton (A°X) emission was observed at 3.358 eV at 8 K. The acceptor energy level of the Sb dopant is estimated to be 0.2 eV above the valence band. Temperature-dependent Hall measurements were performed on Sb-doped ZnO films. At room temperature, one Sb-doped ZnO sample exhibited a low resistivity of 0.2Ωcm, high hole concentration of 1.7×1018cm−3 and high mobility of 20.0cm2∕Vs. This study suggests that Sb is an excellent dopant for reliable and reproducible p-type ZnO fabrication. more

Topics: Acceptor (54%), Molecular beam epitaxy (53%), Electron mobility (52%) more

308 Citations

Journal ArticleDOI: 10.1063/1.2816914
Abstract: Undoped MgxZn1−xO thin films with Mg content of 0⩽x⩽0.20 were grown on c-sapphire substrate by plasma-assisted molecular beam epitaxy. The MgxZn1−xO shows n-type conduction in Mg content of x⩽0.05, and the carrier concentration decreases slowly from 1018to1017cm−3 with increasing Mg content. However, as x⩾0.10, the MgxZn1−xO begins to show p-type conduction, and the carrier concentration goes down sharply to 1015cm−3 firstly and then increases slowly with increasing Mg content from 1015to1016cm−3. The mechanism of transformation from n to p type and change of the carrier concentrations with Mg content were investigated by photoluminescence and absorption measurements as well as first-principle calculation. more

59 Citations

Open accessJournal ArticleDOI: 10.1063/1.2388254
Peng Wang, Nuofu Chen, Zhigang Yin, Ruixuan Dai  +1 moreInstitutions (1)
Abstract: Sb-doped Zn1-xMgxO films were grown on c-plane sapphire ubstrates by radio-frequency magnetron sputtering. The p-type conduction of the films (0.05 <= x <= 0.13) was confirmed by Hall measurements, revealing a hole concentration of 10(15)-10(16) cm(-3) and a mobility of 0.6-4.5 cm(2)/V s. A p-n homojunction comprising an undoped ZnO layer and an Sb-doped Zn0.95Mg0.05O layer shows a typical rectifying characteristic. Sb-doped p-type Zn1-xMgxO films also exhibit a changeable wider band gap as a function of x, implying that they can probably be used for fabrication of ZnO-based quantum wells and ultraviolet optoelectronic devices. (c) 2006 American Institute of Physics. more

Topics: Homojunction (56%), Band gap (53%), Sputter deposition (52%) more

56 Citations