Journal ArticleDOI
Micro-Hall devices: performance, technologies and applications
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TLDR
In this review paper, the performance (in particular the magnetic field resolution), micro-fabrication technologies and applications of micrometer sized Hall effect devices are summarized.Abstract:
In this review paper, we summarize the performance (in particular the magnetic field resolution), micro-fabrication technologies and applications of micrometer sized Hall effect devices. Additionally, our activities in this domain are briefly described.read more
Citations
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1/f Noise Sources
TL;DR: In this article, a survey of 1/f noise in homogeneous semiconductor samples is presented, where a distinction is made between mobility noise and number noise, and it is shown that there always is mobility noise with an /spl alpha/ value with a magnitude in the order of 10/sup -4/.
Journal ArticleDOI
Fundamental studies of superconductors using scanning magnetic imaging
TL;DR: In this paper, the authors discuss the application of scanning magnetic imaging to fundamental studies of superconductors, concentrating on three scanning magnetic microscopies (SSM, SHM, and MFM).
Journal ArticleDOI
Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride
Jan Dauber,Jan Dauber,Abhay A. Sagade,Martin Oellers,Kenji Watanabe,Takashi Taniguchi,Daniel Neumaier,Christoph Stampfer,Christoph Stampfer +8 more
TL;DR: In this article, the authors presented the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where they gain from high mobility and low charge carrier density at room temperature.
Journal ArticleDOI
Batch-fabricated high-performance graphene Hall elements
TL;DR: It is shown that graphene is intrinsically an ideal material for Hall elements which may harness the remarkable properties of graphene, i.e. extremely high carrier mobility and atomically thin active body, to create ideal magnetic sensors with high sensitivity, excellent linearity and remarkable thermal stability.
Journal ArticleDOI
Submicrometer Hall devices fabricated by focused electron-beam-induced deposition
Giovanni Boero,Ivo Utke,T. Bret,Niels Quack,M Todorova,S Mouaziz,Pavel Kejik,Jürgen Brugger,Radivoje Popovic,Patrik Hoffmann +9 more
TL;DR: Hall devices having an active area of about (500 nm) are fabricated by focused electron-beam-induced deposition as mentioned in this paper, which consists of cobalt nanoparticles in a carbonaceous matrix, and realized devices have, at room temperature, a current sensitivity of about 1 V/AT, a resistance of a few kilo-ohms, and can be biased with a maximum current of approximately 1 mA.
References
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Journal ArticleDOI
New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
Journal ArticleDOI
1/f noise sources
TL;DR: In this paper, a survey of 1/f noise in homogeneous semiconductor samples is presented, where a distinction is made between mobility noise and number noise, and it is shown that there always is mobility noise with an /spl alpha/ value with a magnitude in the order of 10/sup -4/.
Book
Hall effect devices
TL;DR: The Hall Effect Hall Elements: Theory of Operation Hall Elements as Magnetic Sensors Magnetic-Sensitive Field Effect and Bipolar Devices Applications of Hall Magnetic Sensorors Hall Devices as a Means for Characterising Semiconductor Materials.
1/f Noise Sources
TL;DR: In this article, a survey of 1/f noise in homogeneous semiconductor samples is presented, where a distinction is made between mobility noise and number noise, and it is shown that there always is mobility noise with an /spl alpha/ value with a magnitude in the order of 10/sup -4/.
Journal ArticleDOI
Thermodynamic observation of first-order vortex-lattice melting transition in Bi2Sr2CaCu2O8
Eli Zeldov,D. Majer,Marcin Konczykowski,Vadim B. Geshkenbein,Valerii M. Vinokur,Hadas Shtrikman +5 more
TL;DR: In this article, the lattice of magnetic flux lines that can permeate a type ii superconductor, such as the high-transition-temperature copper oxide materials, was found to be first-order.