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Microelectronic circuits

01 Jan 1982-
About: The article was published on 1982-01-01 and is currently open access. It has received 1413 citations till now.
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Journal ArticleDOI
TL;DR: In this article, the authors proposed a method of modeling and simulation of photovoltaic arrays by adjusting the curve at three points: open circuit, maximum power, and short circuit.
Abstract: This paper proposes a method of modeling and simulation of photovoltaic arrays. The main objective is to find the parameters of the nonlinear I-V equation by adjusting the curve at three points: open circuit, maximum power, and short circuit. Given these three points, which are provided by all commercial array data sheets, the method finds the best I-V equation for the single-diode photovoltaic (PV) model including the effect of the series and parallel resistances, and warranties that the maximum power of the model matches with the maximum power of the real array. With the parameters of the adjusted I-V equation, one can build a PV circuit model with any circuit simulator by using basic math blocks. The modeling method and the proposed circuit model are useful for power electronics designers who need a simple, fast, accurate, and easy-to-use modeling method for using in simulations of PV systems. In the first pages, the reader will find a tutorial on PV devices and will understand the parameters that compose the single-diode PV model. The modeling method is then introduced and presented in details. The model is validated with experimental data of commercial PV arrays.

3,811 citations


Cites background from "Microelectronic circuits"

  • ...A photovoltaic cell is basically a semiconductor diode whose p–n junction is exposed to light [1], [2]....

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Journal ArticleDOI
TL;DR: An extensive review of carbon nanomaterials in electronic, optoelectronic, photovoltaic, and sensing devices with a particular focus on the latest examples based on the highest purity samples is presented.
Abstract: In the last three decades, zero-dimensional, one-dimensional, and two-dimensional carbon nanomaterials (i.e., fullerenes, carbon nanotubes, and graphene, respectively) have attracted significant attention from the scientific community due to their unique electronic, optical, thermal, mechanical, and chemical properties. While early work showed that these properties could enable high performance in selected applications, issues surrounding structural inhomogeneity and imprecise assembly have impeded robust and reliable implementation of carbon nanomaterials in widespread technologies. However, with recent advances in synthesis, sorting, and assembly techniques, carbon nanomaterials are experiencing renewed interest as the basis of numerous scalable technologies. Here, we present an extensive review of carbon nanomaterials in electronic, optoelectronic, photovoltaic, and sensing devices with a particular focus on the latest examples based on the highest purity samples. Specific attention is devoted to each class of carbon nanomaterial, thereby allowing comparative analysis of the suitability of fullerenes, carbon nanotubes, and graphene for each application area. In this manner, this article will provide guidance to future application developers and also articulate the remaining research challenges confronting this field.

958 citations

Journal ArticleDOI
TL;DR: This review conducts a comprehensive analysis on the material properties, device structures, and performance of mLED/μLED/OLED emissive displays and mLED backlit LCDs to compare the motion picture response time, dynamic range, and adaptability to flexible/transparent displays.
Abstract: Presently, liquid crystal displays (LCDs) and organic light-emitting diode (OLED) displays are two dominant flat panel display technologies Recently, inorganic mini-LEDs (mLEDs) and micro-LEDs (μLEDs) have emerged by significantly enhancing the dynamic range of LCDs or as sunlight readable emissive displays "mLED, OLED, or μLED: who wins?" is a heated debatable question In this review, we conduct a comprehensive analysis on the material properties, device structures, and performance of mLED/μLED/OLED emissive displays and mLED backlit LCDs We evaluate the power consumption and ambient contrast ratio of each display in depth and systematically compare the motion picture response time, dynamic range, and adaptability to flexible/transparent displays The pros and cons of mLED, OLED, and μLED displays are analysed, and their future perspectives are discussed

505 citations

Journal ArticleDOI
12 Oct 2017-Nature
TL;DR: The generation of wafer-scale semiconductor films with a very high level of spatial uniformity and pristine interfaces is reported, designed at the atomic scale using layer-by-layer assembly of two-dimensional building blocks under vacuum.
Abstract: High-performance semiconductor films with vertical compositions that are designed to atomic-scale precision provide the foundation for modern integrated circuitry and novel materials discovery One approach to realizing such films is sequential layer-by-layer assembly, whereby atomically thin two-dimensional building blocks are vertically stacked, and held together by van der Waals interactions With this approach, graphene and transition-metal dichalcogenides-which represent one- and three-atom-thick two-dimensional building blocks, respectively-have been used to realize previously inaccessible heterostructures with interesting physical properties However, no large-scale assembly method exists at present that maintains the intrinsic properties of these two-dimensional building blocks while producing pristine interlayer interfaces, thus limiting the layer-by-layer assembly method to small-scale proof-of-concept demonstrations Here we report the generation of wafer-scale semiconductor films with a very high level of spatial uniformity and pristine interfaces The vertical composition and properties of these films are designed at the atomic scale using layer-by-layer assembly of two-dimensional building blocks under vacuum We fabricate several large-scale, high-quality heterostructure films and devices, including superlattice films with vertical compositions designed layer-by-layer, batch-fabricated tunnel device arrays with resistances that can be tuned over four orders of magnitude, band-engineered heterostructure tunnel diodes, and millimetre-scale ultrathin membranes and windows The stacked films are detachable, suspendable and compatible with water or plastic surfaces, which will enable their integration with advanced optical and mechanical systems

414 citations

Journal ArticleDOI
Ali Javey1, Qian Wang1, Ant Ural1, Yiming Li1, Hongjie Dai1 
TL;DR: In this article, the authors demonstrate multistage complementary NOR, OR, NAND, and AND logic gates and ring oscillators with arrays of p-and n-type nanotube field effect transistors (FETs).
Abstract: This work demonstrates multistage complementary NOR, OR, NAND, and AND logic gates and ring oscillators (frequency ∼220 Hz) with arrays of p- and n-type nanotube field effect transistors (FETs). The demonstration is made possible by progress in three aspects of nanotube synthesis and integration. First, patterned growth leads to large numbers of nanotube FETs in an array, as up to 70% of individual nanotubes are semiconductors. Second, metal electrodes are successfully embedded underneath nanotubes and used as local gates. Third, complementary logic gates are made possible by converting p-type FETs in an array into n-type FETs by a local electrical manipulation and doping approach.

410 citations