Proceedings ArticleDOI
Microstructure processing and micromagnetic simulations of magnetic tunnel junction based low power magnetic memories
Mayank Chakraverty,Harish M. Kittur +1 more
- pp 1-6
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TLDR
In this paper, the technicalities of the two MTJ-based MRAM cell configurations have been discussed and the I-V characteristics and TMR ratios of the widely investigated Fe/MgO/Fe magnetic tunnel junction have also been evaluated using first principle LSDA band-structure calculations.Abstract:
Magnetoresistive memory (MRAM) is one of the forerunners of the nanotechnology enabled memories lined to replace the traditional memories like Flash, DRAM and SRAM. MRAMs are based on the phenomenon of spin dependent tunneling in magnetic tunnel junctions (MTJs). It stores data in the magnetization of a magnetic layer as opposed to electrical charge in conventional RAMs. Yet the read-out of MRAM is electrical. It is claimed to offer something close to the speed of SRAM, with a density approaching that of single-transistor DRAM and the ability to store information when power is removed, like flash memory or EEPROM. This paper works out the microstructure processing steps in the fabrication of an MTJ based MRAM cell in two distinct versions. The technicalities of the two MTJ based MRAM cell configurations have been discussed in this paper. The I-V characteristics and TMR ratios of the widely investigated Fe/MgO/Fe magnetic tunnel junction have also been evaluated using first principle LSDA band-structure calculations. Micro magnetic simulations of the MTJ demonstrate the magnetic switching in the two ferromagnetic layers. The resulting hysteresis loop has been presented at the end of the paper.read more
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Proceedings ArticleDOI
Demonstration of Bias Dependence of Tunnel Magnetoresistance in Co-MgO-Co Magnetic Tunnel Junctions using First Principles Calculations
TL;DR: In this article, the bias dependence of tunneling magnetoresistance in Co-MgO-Co magnetic tunnel junctions (MTJ) using first principles SGGA band structure calculations at four different temperatures was reported.
References
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The SIESTA method for ab initio order-N materials simulation
José M. Soler,Emilio Artacho,Julian D. Gale,Alberto García,Javier Junquera,Javier Junquera,Pablo Ordejón,Daniel Sánchez-Portal +7 more
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TL;DR: In this paper, an ab initio method for calculating the electronic structure, electronic transport, and forces acting on the atoms, for atomic scale systems connected to semi-infinite electrodes and with an applied voltage bias.
Journal ArticleDOI
Microstructured magnetic tunnel junctions (invited)
William J. Gallagher,Stuart S. P. Parkin,Yu Lu,X. P. Bian,A. C. Marley,Kevin P. Roche,R. A. Altman,S. A. Rishton,C. Jahnes,T. M. Shaw,Gang Xiao +10 more
TL;DR: In this paper, a simple self-aligned process was used to fabricate magnetic tunnel junctions down to submicron sizes using optical and electron-beam lithography, and the shape of the field response of the magnetoresistance was varied by adjusting the shape anisotropy of one junction electrode.
Journal ArticleDOI
Recent developments in magnetic tunnel junction MRAM
Saied N. Tehrani,Bradley N. Engel,Jon M. Slaughter,Eugene Youjun Chen,M. DeHerrera,M. Durlam,Peter K. Naji,Renu Whig,J. Janesky,J. Calder +9 more
TL;DR: Magnetic tunnel junction (MTJ) as mentioned in this paper was used to achieve read and program address access times of 14 ns in a 256/spl times/2 MRAM with magnetic shape anisotropy.
Journal ArticleDOI
Non-volatile memory technologies: emerging concepts and new materials
Roberto Bez,Agostino Pirovano +1 more
TL;DR: The attention will be focused on PCM technology as one of the best candidate as next-decade non-volatile memory technology, covering the main characteristics and presenting the latest development results.