Microwave Characterization of Silicon Wafer Using Rectangular Dielectric Waveguide
01 Dec 2006-pp 411-415
TL;DR: In this article, a vector network analyzer (VNA), a pair of coaxial cable, coaxial to waveguide adapter and dielectric-filled standard gain horn antenna were used to characterize p-type and n-type silicon semiconductor wafers.
Abstract: A non-destructive and easy to use method is presented to characterize p-type and n-type silicon semiconductor wafers using a rectangular dielectric waveguide measurement (RDWG) system The measurement system consists of a vector network analyzer (VNA), a pair of coaxial cable, coaxial to waveguide adapter and dielectric-filled standard gain horn antenna In this method, the reflection and transmission coefficients, S11 and S21, were measured for silicon wafer sandwiched between the two Teflon, the dielectric that filled the standard gain horn antenna It was observed that, the dielectric constant of the silicon wafers are relatively constant, varying slightly over the frequency range of 9 to 12 GHz The loss factor, loss tangent and conductivity of the doped wafers are higher than the undoped type
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TL;DR: In this paper, an optical transparent antenna array integrated with solar cell is presented, which achieves a good radiation performance with little effect on solar photovoltaic generation and achieves an 88% optical transparency.
Abstract: This letter presents an optical transparent antenna array integrated with solar cell. Metal-meshed structure is used in the transparent antenna array, which achieves a balance between radiation efficiency and optical transparency. The meshed patches have equidistant distribution in the array and are fed by coaxial probes. A meshed ground, which has the same grid size as the meshed patch, is introduced and aligned with the patch. Cheap coating technology is utilized in printing silver-meshed patch and ground on the two surfaces of a glass substrate. A commercial monocrystalline silicon solar cell is closely assembled under the transparent antenna array. The proposed antenna array operates from 8.51 to 9.10 GHz (VSWR $\leq 2$ ) with low cross-polarization levels, and obtains an 88% optical transparency. The transparent antenna array achieves a good radiation performance with little effect on solar photovoltaic generation.
39 citations
Cites background from "Microwave Characterization of Silic..."
...5 S/m) [14], which has a similar order of doping concentration as monocrystalline solar cell, backed with a metal bottom to construct the solar cell....
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...9, and σ of most commercial solar cells has an order from 102 to 104 S/m, which depends on manufacture and temperature....
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...In the simulation process, we use a simplified silicon semiconductor (εr = 11.9, tanδ = 2.2, σ = 13.5 S/m) [14], which has a similar order of doping concentration as monocrystalline solar cell, backed with a metal bottom to construct the solar cell....
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...A realized gain reduction less than 1 dB peaking at σ = 103 S/m is shown in Fig....
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TL;DR: In this paper, the dielectric measurement of undoped silicon in the E-band (60-90 GHz) using a free-space quasi-optical system is described.
Abstract: With the rapid development of millimeter wave technology, it is a fundamental requirement to understand the permittivity of materials in this frequency range. This paper describes the dielectric measurement of undoped silicon in the E-band (60–90 GHz) using a free-space quasi-optical system. This system is capable of creating local plane wave, which is desirable for dielectric measurement in the millimeter wave range. Details of the design and performance of the quasi-optical system are presented. The principle of dielectric measurement and retrieval process are described incorporating the theories of wave propagation and scattering parameters. Measured results of a sheet of undoped silicon are in agreement with the published results in the literature, within a discrepancy of 1%. It is also observed that silicon has a small temperature coefficient for permittivity. This work is helpful for understanding the dielectric property of silicon in the millimeter wave range. The method is applicable to other electronic materials as well as liquid samples.
16 citations
Additional excerpts
...653 < 10 −4 Relative error: ±3% [17] 9–12 Waveguide measurement 11....
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...653 4 10 < Relative error: ±3% [17] 9–12 Waveguide measurement 11....
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30 Jul 2012
TL;DR: In this paper, a group of coplanar lines on a silicon dioxide insulating layer on a nominally doped silicon substrate is simulated and measured, and several optimized transmission line structures are designed and simulated.
Abstract: In this paper, a group of coplanar lines on a silicon dioxide insulating layer on a nominally doped silicon substrate is simulated and measured. Electrical parameters extracted from published data are used and lead to substantially improved agreement with measurements. In addition, several models of redistribution layer (RDL) with different shape-TSVs (through silicon vias) are simulated, along with two different joint structures between TSV and RDL. Simulation result suggest that because the electrical length is very short reflection losses attributed to the structural details of the TSV may be ignored in the applicable frequency band of the TSV. In addition, several optimized transmission line structures are designed and simulated. Results suggest that design criteria used to optimize lines in organic substrates are not directly transferable to a silicon substrate. This paper shows a simple but effective method with which to analyze the influences exerted by the metal oxide semiconductor (MOS) capacitance at the TSV interface and eddy currents in the substrate on a transmission line. Finally, newly de-embedded test structures are provided to extract spice model parameters for TSV modeling.
7 citations
Cites background or methods from "Microwave Characterization of Silic..."
...Table 1 Electrical parameter of nominally doped p-type silicon and frequency variation [6]....
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...The complex permittivity of silicon was measured [6] directly by the cavity insertion method between 9 GHz and 12 GHz in nominally doped silicon....
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...The complex permittivity of p-type and n-type silicon wafers was measured by using rectangular dielectric waveguides as described in [6]....
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...In order to improve the accuracy of the simulation, electrical parameters, extracted from microwave measurements on silicon [6], are used in HFSS simulations of a group of coplanar lines with TSVs....
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...Parameters extracted from the measured complex permittivity of nominally doped silicon, reported in [6], are used as substrate input parameters in this simulation....
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01 Feb 2016-Microsystem Technologies-micro-and Nanosystems-information Storage and Processing Systems
TL;DR: In this article, a silicon interposer test vehicle with through silicon vias (TSVs) is evaluated under radio frequency (RF) application from DC to 10 GHz, and it is concluded that the poor performance was mainly caused by accumulated space charge at the SiO2---Si interface and impedance mismatch of transmission lines.
Abstract: A silicon interposer test vehicle with through silicon vias (TSVs) is evaluated under radio frequency (RF) application from DC to 10 GHz. TSVs with 30 μm diameter and 150 μm height were fabricated with one layer RDL of 20 μm line width. A group of coplanar waveguides (CPW) are designed and tested to analyze the electrical performance of the interposer under high frequency in both the time and frequency domains. Results show that the interposer cannot be used above 1 GHz because of excessive losses and high reflections. Based on the analysis of the test results and simulation results for different CPW (coplanar waveguides) structures, it is concluded that the poor performance was mainly caused by accumulated space-charge at the SiO2---Si interface and impedance mismatch of transmission lines. Solutions that were implemented included enhancing the thickness of the SiO2 insulation layer between the metal and silicon substrate and improving the design of the transmission line. Implementation of these changes led acceptable interposer performance up to 10 GHz.
3 citations
TL;DR: By using optical sampling with repetition frequency modulation of pump/probe laser pulses on photoconductive emitter/detector antennas, the high-speed time/frequency domain gigahertz imaging is reported due to the absence of opto-mechanical delay line in this optical scheme.
Abstract: By using optical sampling with repetition frequency modulation of pump/probe laser pulses on photoconductive emitter/detector antennas, the high-speed time/frequency domain gigahertz imaging is reported due to the absence of opto-mechanical delay line in this optical scheme. The clear contrast for a 3-cm wide metal plate, which was placed behind a 5-cm thick concrete block, was observed with a 1 × 1 mm image pixilation. On average, it took only ~0.75 s per pixel/waveform acquisition/assignment with a 675 ps time-domain window. This could become a valuable non-destructive evaluation technique in gigahertz spectral range with all benefits of time-domain spectroscopy.
3 citations
References
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Book•
01 Jan 1972TL;DR: The Solid State Electronic Devices (SSED) as discussed by the authors is an introductory book on semiconductor materials, physics, devices, and technology, which aims to: 1) develop basic semiconductor physics concepts, and 2) provide a sound understanding of current semiconductor devices and technology.
Abstract: For undergraduate electrical engineering students or for practicing engineers and scientists interested in updating their understanding of modern electronics One of the most widely used introductory books on semiconductor materials, physics, devices and technology, Solid State Electronic Devices aims to: 1) develop basic semiconductor physics concepts, so students can better understand current and future devices; and 2) provide a sound understanding of current semiconductor devices and technology, so that their applications to electronic and optoelectronic circuits and systems can be appreciated. Students are brought to a level of understanding that will enable them to read much of the current literature on new devices and applications. Teaching and Learning Experience This program will provide a better teaching and learning experience-for you and your students. It will help: *Provide a Sound Understanding of Current Semiconductor Devices: With this background, students will be able to see how their applications to electronic and optoelectronic circuits and systems are meaningful. *Incorporate the Basics of Semiconductor Materials and Conduction Processes in Solids: Most of the commonly used semiconductor terms and concepts are introduced and related to a broad range of devices. *Develop Basic Semiconductor Physics Concepts: With this background, students will be better able to understand current and future devices.
1,632 citations
Book•
01 Jan 1991TL;DR: Neamen's Semiconductor Physics and Devices, Third Edition as discussed by the authors deals with the electrical properties and characteristics of semiconductor materials and devices, and brings together quantum mechanics, the quantum theory of solids, semiconductor material physics, and semiconductor device physics in a clear and understandable way.
Abstract: Neamen's Semiconductor Physics and Devices, Third Edition. deals with the electrical properties and characteristics of semiconductor materials and devices. The goal of this book is to bring together quantum mechanics, the quantum theory of solids, semiconductor material physics, and semiconductor device physics in a clear and understandable way.
Table of contents
Prologue Semiconductor and the Integrated Circuit
1 The Crystal Structure of Solids
2 Introduction to Quantum Mechanics
3 Introduction to the Quantum Theory of Solids
4 The Semiconductor in Equilibrium
5 Carrier Transport Phenomena
6 Nonequilibrium Excess Carriers in Semiconductors
7 The pn Junction
8 The pn Junction Diode
9 Metal-Semiconductor and Semiconductor Heterojunctions
10 The Bipolar Transistor
11 Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor
12 Metal-Oxide-Semiconductor Field-Effect Transistor: Additional Concepts
13 The Junction Field-Effect Transistor
14 Optical Devices
15 Semiconductor Power Devices
Appendix A Selected List of Symbols
Appendix B System of Units, Conversion Factors, and General Constants
Appendix C The Periodic TableAppendix D The Error FunctionAppendix E "Derivation" of Schrodinger's Wave EquationAppendix F Unit of Energy- The Electron-VoltAppendix G Answers to Selected Problems
837 citations
"Microwave Characterization of Silic..." refers background in this paper
...60xlO-19C and n and p are the electron and holes concentration and t =1350 cm2/V-s and th =480 cm2/V-s are the mobility of the electron and holes respectively [11] [12]....
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TL;DR: In this article, a free-space measurement system operating in the 8.2-40 GHz frequency range is used to measure the reflection and transmission coefficients, S/sub 11/ and S/ sub 21/, of planar samples.
Abstract: A free-space measurement system operating in the 8.2-40-GHz frequency range is used to measure the reflection and transmission coefficients, S/sub 11/ and S/sub 21/, of planar samples. The complex electric permittivity and the magnetic permeability are calculated from the measured values of S/sub 11/ and S/sub 21/. The measurement system consists of transmit and receive horn lens antennas, a network analyzer, mode transitions, and a computer. Diffraction effects at the edges of the sample are minimized by using spot-focusing lens antennas. Errors due to multiple reflections between antennas via the surface of the sample are corrected by using a free-space TRL (thru, reflect, line) calibration technique. For thin, flexible samples, the sample had to be sandwiched between two half-wavelength (at mid-band) quartz plates to eliminate sagging. Results are reported in the frequency range of 8.6-13.4 GHz for materials such as Teflon, sodium borosilicate glass, and microwave-absorbing materials. >
743 citations
"Microwave Characterization of Silic..." refers background in this paper
...The DUT is assumed to be planar of infinite extent laterally so that diffraction effects at the edges can be neglected, thus the total reflected signal, SI I and transmitted signals, S21 are given respectively by [7]:...
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Book•
01 Jan 2001
TL;DR: The third edition has numerous revisions that include more beautiful illustrations and photographs, additional sections, more solved problems, worked examples, and end-of-chapter problems with direct engineering applications as discussed by the authors.
Abstract: Principles of Electronic Materials and Devices, Third Edition, is a greatly enhanced version of the highly successful text Principles of Electronic Materials and Devices, Second Edition. It is designed for a first course on electronic materials given in Materials Science and Engineering, Electrical Engineering, and Physics and Engineering Physics Departments at the undergraduate level.
The third edition has numerous revisions that include more beautiful illustrations and photographs, additional sections, more solved problems, worked examples, and end-of-chapter problems with direct engineering applications. The revisions have improved the rigor without sacrificing the original semiquantitative approach that both the students and instructors liked and valued. Some of the new end-of-chapter problems have been especially selected to satisfy various professional engineering design requirements for accreditation across international borders. Advanced topics have been collected under Additional Topics, which are not necessary in a short introductory treatment.
Table of contents
1 Elementary Materials Science Concepts
2 Electrical and Thermal Conduction in Solids
3 Elementary Quantum Physics
4 Modern Theory of Solids
5 Semiconductors
6 Semiconductor Devices
7 Dielectric Materials and Insulation
8 Magnetic Properties and Superconductivity
9 Optical Properties of Materials
Appendix A: Bragg's Diffraction Law and X-Diffraction
Appendix B: Flux, Luminous Flux and the Brightness of Radiation
Appendix C: Major Symbols and Abbreviations
Appendix D: Elements to Uranium
Appendix E: Constants and Useful Information
647 citations
"Microwave Characterization of Silic..." refers background in this paper
...The conductivities in the wafer are caused by the rotation of the dipoles as they attempt to align with the applied field when its polarity is rotating [10]....
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