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Journal ArticleDOI

Microwave conduction in n-type germanium under hot electron conditions

S. Guha, +1 more
- Vol. 90, Iss: 2, pp 427-434
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TLDR
In this article, the effect of anisotropic effective mass on the microwave conduction characteristics is discussed, and the anisotropy is found to be small at room temperature, where the carrier concentration is assumed to be high enough to ensure that intercarrier collisions enforce a Maxwellian distribution on the carriers and the momentum loss by the carriers occurs mainly through scattering due to lattice vibrations.
Abstract
Microwave conduction in n-type germanium in the presence of a high steady electric field is studied The carrier concentration is assumed to be high enough to ensure that intercarrier collisions enforce a Maxwellian distribution on the carriers and the momentum loss by the carriers occurs mainly through scattering due to lattice vibrations. The effect of anisotropic effective mass on the microwave conduction characteristics is discussed, and the anisotropy is found to be small at room temperature Numerical values of microwave conductivity and the change in dielectric constant are found to agree with the experimental results of a 4 68 Ω cm n-type germanium sample, and the best fit with the experimental characteristics is obtained for a value of the optical deformation potential constant D0 between 0 7 to 0 8 × 109 ev cm-1.

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Citations
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Journal ArticleDOI

Hot-carrier microwave conductivity of elemental semiconductors

TL;DR: The hot-carrier microwave conductivity characteristics of the elemental semiconductors are reviewed in this paper, where the microwave incremental and high-field microwave conductivities are explained from simple physical considerations.
Journal ArticleDOI

Microwave complex permittivities of Si and GaAs semiconductors in the presence of high steady electric fields

TL;DR: In this paper, the attenuation and phase shift of microwaves at 9.03 GHz in the presence of high steady electric fields at temperatures of 300°K and 95°k were investigated.
References
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Journal ArticleDOI

Hot electrons in germanium and Ohm's law

TL;DR: In this article, the data of E. J. Ryder on the mobility of electrons in electric fields up to 40,000 volts per cm are analyzed and it is estimated that electron “temperatures as high as 4000°K have been produced in specimens having temperatures of atomic vibration of 300° K.
Journal ArticleDOI

A study of energy-loss processes in germanium at high electric fields using microwave techniques

TL;DR: In this paper, a theory of the mobility and dielectric constant under the conditions of the experiment is developed; initially an elementary, phenomenological approach is taken, but finally a more refined theory is given which includes specific scattering processes (optical and acoustical phonons).
Journal ArticleDOI

Distribution Functions for Hot Electrons in Many-Valley Semiconductors

H. G. Reik, +1 more
- 01 Nov 1961 - 
TL;DR: In this article, the Boltzmann equation for electrons in many-valley semiconductors, with scattering by acoustical and optical lattice vibrations, is solved for high electric fields in the following two cases: (1) Intervalley-scattering is completely negligible.
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