Microwave magnetoconductivity of polar semiconductors
01 Nov 1975-Journal of Applied Physics (American Institute of Physics)-Vol. 46, Iss: 11, pp 4819-4822
TL;DR: In this paper, an iteration method is presented for the accurate calculation of the microwave magnetoconductivity of polar semiconductors, which is an extension of Rode's iteration method for the evaluation of dc conductivity.
Abstract: An iteration method is presented for the accurate calculation of the microwave magnetoconductivity of polar semiconductors. The method is an extension of Rode’s iteration method for the evaluation of dc conductivity. The real and imaginary parts of the two perturbation components of the distribution function are obtained at each step of iteration by solving the four simultaneous equations relating the components. The iteration procedure is found to converge within 5–10 steps. The method has been applied to obtain the magnetoconductivity tensor of n‐InSb at 10, 35, 85, and 135 GHz for magnetic induction up to 0.1 Wb/m2. All the relevant scattering mechanisms and the effects of band nonparabolicity have been taken into account. The calculated values of conductivity differ significantly from those obtained by applying the Drude theory and do not agree with those deduced from a cavity perturbation experiment.
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TL;DR: In this paper, a review of the history of conductivity measurement using direct current, radio frequency, microwave and time domain measurement techniques is presented, along with the most recent achievements in the field.
Abstract: Contactless methods of conductivity measurement are becoming increasingly important due to the progress being made in materials technology and the development of new materials intended for use in the electronics industry, including graphene, GaN and SiC Despite the fact that they are conducting materials, some of them, like GaN and SiC, cannot be measured with the conventional four-point probe technique Contactless measurement techniques offer fast and non-destructive methods to measure such materials Selection of the appropriate method from the available techniques makes it possible to measure materials over a resistivity range of more than 20 decades, from 10−9 to 1012 Ω cm This review gives an overview of the history of conductivity measurement, describes contactless measurement methods and discusses the most recent achievements in the field Direct current, radio frequency, microwave and time domain measurement techniques are discussed in this review paper
69 citations
TL;DR: In this article, the Boltzmann transport equation involved in relevant scattering mechanisms has been solved and the mobility of In x Ga 1− x N alloy by the iterative method interval x = 0 - 1 in low field.
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TL;DR: In this paper, the Boltzmann transport equation (BTE) is solved in a way which takes anisotropy, non-parabolicity, and inelastic scattering fully into account, and an inaccuracy arising from the standard treatment of phonon emission scattering is corrected.
Abstract: The success of PbTe as a thermoelectric material has generated growing interest in its charge carrier transport properties. The Boltzmann transport equation (BTE) is solved in a way which takes anisotropy, non-parabolicity, and inelastic scattering fully into account, and an inaccuracy arising from the standard treatment of phonon emission scattering is corrected. The method is used to calculate the conductivity and Hall coefficient of n-PbTe over a wide range of temperatures and doping levels, and it is found that room temperature measurements of PbTe may underestimate the true carrier concentration in some cases by a factor of 2. Experimental results on both bulk and epitaxial samples are in reasonable agreement with the predictions. A conducting p-type layer is also observed in the epitaxial films, exhibiting both persistent photoconductivity and sensitivity to air exposure.
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TL;DR: In this paper, the effect of dislocation scattering on Hall mobility of InN at a carrier concentration of 10 17 cm − 3 is investigated in the temperature range of 30-600 k.
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TL;DR: The band structure of InSb is calculated using the k ·. p perturbation approach and assuming that the conduction and valence band extrema are at k = 0 as mentioned in this paper.
2,905 citations
TL;DR: In this paper, the drift mobilities of the five direct-gap III-V semiconductors GaAs, GaSb, InP, InAs, and InSb are presented as a function of temperature.
Abstract: The electron drift mobilities of the five direct-gap III-V semiconductors GaAs, GaSb, InP, InAs, and InSb are presented as a function of temperature. Polar-mode, deformation-potential acoustic, and piezoelectric scattering are included, as well as nonparabolic conduction bands and the corresponding electron wave functions. The drift mobility follows exactly from the assumed model by a simple iterative technique of solution which retains all the advantages of variational techniques without, however, the need for excessive mathematical detail. Piezoelectric scattering is shown to be considerable in GaAs for temperatures below 100 \ifmmode^\circ\else\textdegree\fi{}K. The agreement between theory and experiment for GaAs is satisfactory.
295 citations
TL;DR: In this article, the Boltzmann equation for conduction electrons in a crystal was solved by means of a variational method, and exact expressions for the electrical conductivity and the thermo-electric power were obtained in the form of ratios of infinite determinants.
Abstract: The Boltzmann equation is set up for the conduction electrons in a crystal in which the scattering is due to the polarization waves of the lattice, and it is pointed out that at low temperatures it is impossible to define a unique time of relaxation for the scattering process. The Boltzmann equation is solved by means of a variational method, and exact expressions for the electrical conductivity and the thermo-electric power are obtained in the form of ratios of infinite determinants. By approximating to the exact solutions, relatively simple expressions are derived which are used to discuss the dependence of the conduction phenomena upon the temperature and upon the degree of degeneracy of the electron gas.
280 citations
TL;DR: In this paper, an exact method for solving the linearized Boltzmann equation for arbitrary magnetic field strengths in the presence of polar mode scattering and elastic scattering mechanisms is given for n-GaAs, and the results obtained are within 10% of the experimental values throughout the temperature range 9-400K.
Abstract: An exact method is given for solving the linearized Boltzmann equation for arbitrary magnetic field strengths in the presence of polar mode scattering and elastic scattering mechanisms. The perturbed distribution function shows slope discontinuities at all multiples of the polar phonon energy. The Hall mobility of n-GaAs is calculated and the results obtained are within 10% of the experimental values throughout the temperature range 9-400K. The calculated Hall number is also in good agreement with experiment at high magnetic fields but is about 5% too large at low fields.
70 citations