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Journal ArticleDOI

Microwave properties of a proposed read-like device with variable current multiplication in the avalanche zone and an additional transverse field in the drift zone

01 Jan 1978-Vol. 66, Iss: 1, pp 92-94
TL;DR: In this article, the high-frequency properties of a Read-like IMPATT device, which is arranged to have a variable current multiplication in the avalanche zone by means of controlled injection of minority carriers into the reverse biased junction, and also an additional transverse field in the intrinsic drift region, is presented.
Abstract: A study of the high-frequency properties of a Read-like IMPATT device, which is arranged to have a variable current multiplication in the avalanche zone by means of controlled injection of minority carriers into the reverse biased junction, and also an additional transverse field in the intrinsic drift region, is presented. The additional field shifts the direction of space-charge waves emerging from the avalanche layer without altering the drift velocity which is already saturated. It is shown that the frequency of the maximum negative conductance, avalanche frequency, magnitude of the negative conductance, and susceptance of the device can be controlled over a wide range by varying the current multiplication in the avalanche zone. It is also shown that a fine variation of the negative conductance without altering the avalanche frequency or susceptance can be obtained by means of the additional transverse field.
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Reference EntryDOI
S.K. Roy1
27 Dec 1999
TL;DR: In this paper, the authors present a detailed analysis of the DC and small-signal properties of Impatt Diodes of any Doping profile.The sections in this article are
Abstract: The sections in this article are 1 Impatt Diodes 2 Impatt Structures and Doping Profiles 3 Basic Principle of Generation of Microwaves in Impatt Diodes 4 Small-Signal Analysis Based on Analytical Approximation 5 Computer Studies of the DC and Small-Signal Properties of Impatt Diodes of any Doping Profile 6 Small-Signal Computer Analysis of Impatt Diodes 7 Large-Signal Analysis of Impatt Diodes 8 DC-to-Microwave Conversion Efficiency 9 Effect of Mobile Space Charge 10 Double Avalanche Region Diode and Cancellation of Space Charge Effect 11 Low–High–Low Diodes for Reduction of the Space Charge Effect and Constriction of the Avalanche Zone 12 High-Frequency Considerations 13 Noise in Impatt Diodes 14 Thermal Limitations and Heat Sink 15 Millimeter-Wave Impatt Diodes 16 Pulsed Millimeter-Wave Impatt Diode 17 Frequency Chirp in Pulsed Impatt Oscillators 18 GaAs and InP Impatt Diodes 19 Heterojunction Impatt Diodes 20 Control of Impatt Properties by Optical Illumination of the Active Area and by A Transverse Field in the Drift Region 21 Trapatt Diode 22 Baritt Diodes 23 Acknowledgement

3 citations

References
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Journal ArticleDOI
T. Misawa1
TL;DR: In this article, the effect of the magnitude of the saturation current was investigated theoretically within the framework of Read's original analysis, and it was shown that with saturation currents as high as 1/100 of the bias current, the original efficiency prediction of 30 per cent was halved.
Abstract: High reverse saturation currents can substantially reduce the potential oscillation efficiency of a Read diode. In this paper the effect of the magnitude of the saturation current was investigated theoretically within the framework of Read's original analysis. With the saturation current as high as 1/100 of the bias current Read's original efficiency prediction of 30 per cent is halved. Several mechanisms can give an effective ‘saturation’ current much larger than the prebreakdown value; for example, minority carrier storage in the space-charge neutral region adjacent to the avalanche region, or minority carrier injection by an imperfect ohmic contact to the neutral region. It is believed that this large effective saturation current is a major reason that experimental results have, to date, fallen far short of Read's prediction.

40 citations

Journal ArticleDOI
T. Misawa1
TL;DR: In this paper, a Schottky barrier is used to replace the p-n junction in order to avoid the back-diffuse storage effect of minority carriers in a Read diode.
Abstract: Computer simulations indicate that the oscillation efficiency of a Read diode is appreciably reduced from Read's prediction of 30 per cent because of a minority-carrier storage effect. A space-charge-neutral end region stores minority carriers which back-diffuse from the adjacent avalanche region and releases them at the critical moment to flood the space-charge region. This deteriorates the phase relation between current and voltage. A theoretical efficiency of only 12.7 per cent was possible with a 10 GHz Si p+nvn+ unit studied. The effect can be avoided by a careful profiling of the field distribution between the avalanche region and the neutral region. However, a simpler solution is to utilize a Schottky barrier in place of the p-n junction. The metal which replaces the neutral region does not store back-diffused carriers.

34 citations

Journal ArticleDOI
01 Jul 1975
TL;DR: In this paper, the effect of the finite current multiplication factor in the avalanche zone on the impedance of a Read diode has been investigated and the magnitude of negative resistance has been found to decrease with the lowering of the multiplication factor while the reactance does not appreciably change.
Abstract: The effect of the finite current multiplication factor in the avalanche zone on the impedance of a Read diode has been investigated. The magnitude of the negative resistance has been found to decrease with the lowering of the multiplication factor M while the reactance does not appreciably change. The avalanche and resonant frequencies become different when M becomes finite and are markedly dependent on it.

9 citations

Journal ArticleDOI
01 Aug 1976
TL;DR: In this article, the high-frequency noise properties of a Read diode, whose current multiplication factor in the avalanche zone can be controlled and is finite, have been analyzed, and it is shown that the open-circuit noise voltage and the noise figure of the diode are reduced with the lowering of the current multiplication factors.
Abstract: The high-frequency noise properties of a Read diode, whose current multiplication factor in the avalanche zone can be controlled and is finite, has been analyzed. The analysis indicates that the open-circuit noise voltage and the noise figure of the diode are reduced with the lowering of the current multiplication factor. It is also found that the open-circuit noise voltage exhibits a finite peak at the avalanche frequency for finite but large values of M which, however, disappears at lower values of M(≤100).

4 citations

Journal ArticleDOI
01 Jun 1968
TL;DR: In this article, a three-terminal p-n-p or n-p-n layer oscillator was proposed to control the microwave output power of avalanche oscillation.
Abstract: To control the microwave output power of avalanche oscillation, a three-terminal p-n-p or n-p-n layer oscillator is proposed. Experimental results with germanium p-n-p transistors are described.

3 citations