Mobility and Saturation Velocity in Graphene on SiO2
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In this paper, the authors examined mobility and saturation velocity in graphene on SiO2 above room temperature (300-500 K) and at high fields (~1 V/um).Abstract:
We examine mobility and saturation velocity in graphene on SiO2 above room temperature (300-500 K) and at high fields (~1 V/um). Data are analyzed with practical models including gated carriers, thermal generation, "puddle" charge, and Joule heating. Both mobility and saturation velocity decrease with rising temperature above 300 K, and with rising carrier density above 2x10^12 cm^-2. Saturation velocity is >3x10^7 cm/s at low carrier density, and remains greater than in Si up to 1.2x10^13 cm^-2. Transport appears primarily limited by the SiO2 substrate, but results suggest intrinsic graphene saturation velocity could be more than twice that observed here.read more
Citations
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References
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TL;DR: Measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated and a sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.
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A self-consistent theory for graphene transport
TL;DR: It is demonstrated theoretically that most of the observed transport properties of graphene sheets at zero magnetic field can be explained by scattering from charged impurities, and it is found that, contrary to common perception, these properties are not universal but depend on the concentration of charged impurity nimp.
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A review of some charge transport properties of silicon
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