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Proceedings ArticleDOI

Modeling of a Precise MOS Sensor Array System for 2D Detection of Magnetic Fields

TL;DR: In this paper, a highly sensitive linear MOS sensor system for two-dimensional detection of magnetic fields is suggested and its characteristics are systematically investigated using an efficient physical simulator which couples the magnetic field equation and the carrier transport equations from the simulation results, an enhanced equivalent circuit model for MOS magnetic sensor is proposed and finally the performance of an integrated smart structure which is able to fully detect the magnetic magnetic field variations in two-directions is analyzed
Abstract: A highly sensitive linear MOS sensor system for two-dimensional detection of magnetic fields is suggested and its characteristics is systematically investigated First, the effects of device geometric parameters and biasing conditions on the sensor sensitivity are accurately determined using an efficient physical simulator which couples the magnetic field equation and the carrier transport equations From the simulation results, an enhanced equivalent circuit model for MOS magnetic sensor is proposed and finally the performance of an integrated smart structure which is able to fully detect the magnetic field variations in two-directions is analyzed
Citations
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Journal Article
TL;DR: A study of new simple compact model of dual-drain Magnetic Field Effect Transistor (MAGFET) including geometrical effects and biasing dependency and model verification with simulation results is introduced to ensure that acceptable error of 2% is achieved.
Abstract: This work offers a study of new simple compact model of dual-drain Magnetic Field Effect Transistor (MAGFET) including geometrical effects and biasing dependency. An explanation of the sensitivity is investigated, involving carrier deflection as the dominant operating principle. Finally, model verification with simulation results is introduced to ensure that acceptable error of 2% is achieved. Keywords—MAGFET, Modeling, Simulation, Split-drain.

11 citations


Additional excerpts

  • ...The relative sensitivity is defined as [27]...

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Book ChapterDOI
01 Jan 2021
TL;DR: In this paper, a linear eight element array of electric field sensors is realized for non-destructive testing of dielectric composite widely used in aerospace, medical, and automotive fields, and an electrically short dipole antenna array was printed on photo paper using silver conductive ink, and the antenna transmission line was printed using polymer-based resistive ink.
Abstract: In this work, a linear eight element array of electric field sensors is realized for non-destructive testing of dielectric composite widely used in aerospace, medical, and automotive fields. An electrically short dipole antenna array was printed on photo paper using silver conductive ink, and the antenna transmission line was printed using polymer-based resistive ink. A zero bias Schottky diode was employed as the RF detector, and the output voltage was fed to a micro-volt meter. Planar dielectric composite sample of 3 mm thickness was illuminated by an X band (8–12 GHz) spot focusing horn antenna. An FR-4 sample of size 300 mm × 300 mm with a defect diameter of 20 mm was tested with this setup. First , the response from a defect free calibration sample is taken. Then , the measurement is carried out on the defective sample. The sensor array was used to map the electric field strength in defect free and defective regions of the sample.

1 citations

References
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Journal ArticleDOI
TL;DR: In this article, a detailed full-wave time-domain simulation model for the analysis of electromagnetic effects on the behavior of the submicrometer-gate field effect transistor (FET's) is presented.
Abstract: A detailed full-wave time-domain simulation model for the analysis of electromagnetic effects on the behavior of the submicrometer-gate field-effect transistor (FET's) is presented. The full wave simulation model couples a three-dimensional (3-D) time-domain solution of Maxwell's equations to the active device model. The active device model is based on the moments of the Boltzmann's transport equation obtained by integration over the momentum space. The coupling between the two models is established by using fields obtained from the solution of Maxwell's equations in the active device model to calculate the current densities inside the device. These current densities are used to update the electric and magnetic fields. Numerical results are generated using the coupled model to investigate the effects of electron-wave interaction on the behavior of microwave FET's. The results show that the voltage gain increases along the device width. While the amplitude of the input-voltage wave decays along the device width, due to the electromagnetic energy loss to the conducting electrons, the amplitude of the output-voltage wave increases as more and more energy is transferred from the electrons to the propagating wave along the device width. The simulation confirms that there is an optimum device width for highest voltage gain for a given device structure. Fourier analysis is performed on the device output characteristics to obtain the gain-frequency and phase-frequency dependencies. The analysis shows a nonlinear energy build-up and wave dispersion at higher frequencies.

131 citations

Journal ArticleDOI
TL;DR: In this paper, an analytical model of the sensitivity of magnetic field effect transistors (MAGFET's) is presented, which includes secondary and parasitic geometric effects as well as operating point dependencies.
Abstract: An analytical model of the sensitivity of magnetic field-effect transistors (MAGFET's) is presented. The model includes secondary and parasitic geometric effects as well as operating point dependencies. In order to get a continuous mathematical description for the sensitivity, we introduce a continuous function for the geometric correction factor G. This description of G is not limited to MAGFET's and can be used for any magnetic device.

47 citations

Journal ArticleDOI
TL;DR: In this paper, a two-and three-dimensional simulation results of magnetic field effect transistors (MAGFETs) are presented, where the current density equations comprising the nonzero magnetic field components are analyzed at both 77 K and 300 K.
Abstract: We present fully three-dimensional simulation results of two-drain and three-drain magnetic field-effect transistors (MAGFET), magnetic sensors based on metal-oxide-semiconductor field-effect transistor (MOSFET) structures. By proper development and discretization of the current density equations comprising the nonzero magnetic field components, a two-drain MAGFET is analyzed at both 77 K and 300 K. The discretization scheme is implemented in the general purpose multidimensional device and circuit simulator MINIMOS-NT which is used to investigate the relative sensitivity, the main figure of merit of any magnetic sensor, as a function of the geometric parameters and bias conditions. Besides, the physical modeling of silicon at 77 K and the Hall scattering factors for the silicon inversion layers are discussed. Our simulation results perfectly match the available experimental data. New in-depth knowledge can be obtained by simulating MOSFET structures at 77 K in the presence of an arbitrary magnetic field.

39 citations


"Modeling of a Precise MOS Sensor Ar..." refers methods in this paper

  • ...The suggested twodirections MOSFET magnetic detector overcomes the disadvantages of single MOSFET-MS....

    [...]

  • ...Equations (5)-(7), which are known as the drift-diffusion model equations, are carefully discretized and selfconsistently solved to accurately simulate the MOSFET-MS in the presence of external magnetic field....

    [...]

  • ...However, to accurately characterize the operation and to precisely optimize the function of MOSFET-MS, rigorous systematic modeling of their physical properties is a must....

    [...]

  • ...MOSFET-MS macro circuit models are attractive tools which are efficiently used to investigate the behavior of integrated systems based on MOSFET-MS [8]....

    [...]

  • ...The aim of the present work is to develop an accurate physical device simulator that can be efficiently and systematically used to characterize the operation and to optimize the structure of both single MOSFET-MS and integrated systems based on MOSFET-MS....

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Journal ArticleDOI
TL;DR: In this article, the performance of several readout circuits using magnetic MOSFET devices in the saturation region are presented, and the proposed models verify the correctness and flexibility of the proposed SPICE macro models.
Abstract: SPICE macro models for magnetic MOSFET (MAGFET) devices in the saturation region are presented. By using the proposed models, the performance of several readout circuits using MAGFET devices could be predictable. In this paper, the magnetic field-to-voltage converter, the magnetically controlled operational-transconductance amplifier, and the magnetically controlled filter and magnetic-operational amplifier using MAGFET devices have been designed, simulated, and tested. The proposed readout circuits using two different CMOS processes have been fabricated. Both simulation and measurement results verify the correctness and flexibility of the proposed SPICE macro models.

39 citations


"Modeling of a Precise MOS Sensor Ar..." refers methods in this paper

  • ...MOSFET-MS macro circuit models are attractive tools which are efficiently used to investigate the behavior of integrated systems based on MOSFET-MS [8]....

    [...]

  • ...Theoretical models had been developed to determine the effect of magnetic fields on the electrical performance of MOSFET-MS [4-8]....

    [...]

Journal ArticleDOI
TL;DR: Hall factors of Si NMOS inversion layers for the modeling of CMOS MAGFET's are given for a wide range of effective fields, temperatures and doping concentrations as mentioned in this paper.
Abstract: Hall factors of Si NMOS inversion layers for the modeling of CMOS MAGFET's are given for a wide range of effective fields, temperatures and doping concentrations. The Hall factors are simulated with a microscopic transport model of the quasi-two-dimensional electron gas (2DEG). The model is verified by measured data of different MOS Hall plates.

16 citations


"Modeling of a Precise MOS Sensor Ar..." refers background or methods in this paper

  • ...The absence of direct coupling between the magnetic field and the semiconductor transport equations in analytical models limits the ability of these models in determining the effects of all device parameters and operating conditions on the sensor sensitivity [4-5]....

    [...]

  • ...The suggested twodirections MOSFET magnetic detector overcomes the disadvantages of single MOSFET-MS....

    [...]

  • ...Equations (5)-(7), which are known as the drift-diffusion model equations, are carefully discretized and selfconsistently solved to accurately simulate the MOSFET-MS in the presence of external magnetic field....

    [...]

  • ...However, to accurately characterize the operation and to precisely optimize the function of MOSFET-MS, rigorous systematic modeling of their physical properties is a must....

    [...]

  • ...MOSFET-MS macro circuit models are attractive tools which are efficiently used to investigate the behavior of integrated systems based on MOSFET-MS [8]....

    [...]