Modeling of a Precise MOS Sensor Array System for 2D Detection of Magnetic Fields
Citations
11 citations
Additional excerpts
...The relative sensitivity is defined as [27]...
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1 citations
References
131 citations
47 citations
39 citations
"Modeling of a Precise MOS Sensor Ar..." refers methods in this paper
...The suggested twodirections MOSFET magnetic detector overcomes the disadvantages of single MOSFET-MS....
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...Equations (5)-(7), which are known as the drift-diffusion model equations, are carefully discretized and selfconsistently solved to accurately simulate the MOSFET-MS in the presence of external magnetic field....
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...However, to accurately characterize the operation and to precisely optimize the function of MOSFET-MS, rigorous systematic modeling of their physical properties is a must....
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...MOSFET-MS macro circuit models are attractive tools which are efficiently used to investigate the behavior of integrated systems based on MOSFET-MS [8]....
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...The aim of the present work is to develop an accurate physical device simulator that can be efficiently and systematically used to characterize the operation and to optimize the structure of both single MOSFET-MS and integrated systems based on MOSFET-MS....
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39 citations
"Modeling of a Precise MOS Sensor Ar..." refers methods in this paper
...MOSFET-MS macro circuit models are attractive tools which are efficiently used to investigate the behavior of integrated systems based on MOSFET-MS [8]....
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...Theoretical models had been developed to determine the effect of magnetic fields on the electrical performance of MOSFET-MS [4-8]....
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16 citations
"Modeling of a Precise MOS Sensor Ar..." refers background or methods in this paper
...The absence of direct coupling between the magnetic field and the semiconductor transport equations in analytical models limits the ability of these models in determining the effects of all device parameters and operating conditions on the sensor sensitivity [4-5]....
[...]
...The suggested twodirections MOSFET magnetic detector overcomes the disadvantages of single MOSFET-MS....
[...]
...Equations (5)-(7), which are known as the drift-diffusion model equations, are carefully discretized and selfconsistently solved to accurately simulate the MOSFET-MS in the presence of external magnetic field....
[...]
...However, to accurately characterize the operation and to precisely optimize the function of MOSFET-MS, rigorous systematic modeling of their physical properties is a must....
[...]
...MOSFET-MS macro circuit models are attractive tools which are efficiently used to investigate the behavior of integrated systems based on MOSFET-MS [8]....
[...]