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Journal ArticleDOI

Modeling of oxidation behavior of SiC-reinforced ceramic matrix composites

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TLDR
In this article, a simple phenomenological model describing the unidirectional oxidation of SiC reinforced oxide CMCs is presented, which allows to calculate the thickness of the silica layer formed on a SiC reinforcement as a function of its location (depth beneath the surface) and time.
Abstract
Internal oxidation of SiC reinforcement is a major factor affecting the environmental stability of SiC reinforced ceramic matrix composites (CMCs) for high temperature applications. A simple phenomenological model describing the unidirectional oxidation of SiC reinforced oxide CMCs is presented. The model allows to calculate the thickness of the silica layer formed on a SiC reinforcement as a function of its location (depth beneath the surface) and time, if the oxygen permeabilities of silica and the matrix are known. The oxidation mode can thereby be predicted. Alternatively, the model allows to evaluate the oxygen permeabilities of silica and the matrix from the experimental oxidation data. Moreover, the expected mode of oxidation, I or II, can be predicted depending on oxygen permeabilities and volume fraction of the reinforcement phase. Application of the model to the results of the microscopic study of the oxidation of SiC reinforced mullite–zirconia matrix composites allowed to evaluate oxygen permeabilities of the matrix and of the growing silica layer on the SiC particles. It was found that while oxygen permeability of the silica layer on the SiC particles may depend significantly on the type of SiC reinforcement, it is reasonably close to the values obtained from the experiments on direct oxidation of SiC and permeation through vitreous silica. Oxygen permeability of the mullite–ZrO2 matrix showed a dependence on the microstructure and composition of the matrix.

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Citations
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Book ChapterDOI

Advances in self-healing ceramic matrix composites

TL;DR: In this article, the capacity of a system to repair damage by itself so that cracks are sealed is defined. But self-healing remains efficient if the oxide is chemically and thermally stable.
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Ceramic matrix composite corrosion models

TL;DR: The use of an empirical equation of the form x = k 1 t + k' p t +k log log log t, fitted by simple multiple linear regression, is capable to describe many versions of corrosion processes, if k 1 is allowed to become negative or positive (x: scale thickness or specific mass change, t: time) as mentioned in this paper.
Journal ArticleDOI

Oxidation behavior and phase transition of ZrB2–SiCw–ZrO2f ceramic

TL;DR: In this article, the phase transition of ZrB2-SiCw-ZrO2f ceramic was investigated by in situ high-temperature XRD, XPS, SEM, EDS and TEM measurements.
Journal ArticleDOI

High Temperature Oxidation Behavior of Silicon Carbide Ceramic

TL;DR: In this paper, the authors studied the oxidation thermodynamics of silicon carbide (SiC)ceramic by means of HSC Chemistry code, and the weight change, morphology and phase of oxidation products were analyzed by thermogravimetric analysis(TG), scanning electron microscopy(SEM ) and X-ray diffraction (XRD).
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Thermodynamics and Oxidation Behaviour of Crystalline Silicon Carbide (3C) with Atomic Oxygen and Ozone

TL;DR: In this article, the thermodynamic stability of crystalline silicon carbide (cubic form) by atomic oxygen (O) and ozone (O3) was derived to understand the stability of SiC in the upper atmosphere.
References
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Book

Introduction to Ceramics

TL;DR: In this paper, the authors present a model for the development of the MICROSTRUCTURE in CERAMICS based on phase transformation, glass formation and glass-Ceramics.
Journal ArticleDOI

General Relationship for the Thermal Oxidation of Silicon

TL;DR: In this paper, the thermaloxidation kinetics of silicon are examined in detail based on a simple model of oxidation which takes into account the reactions occurring at the two boundaries of the oxide layer as well as the diffusion process, the general relationship x02+Ax0=B(t+τ) is derived.
Journal ArticleDOI

Oxidation Kinetics of Silicon Carbide Crystals and Ceramics: I, In Dry Oxygen

TL;DR: In this article, the oxidation kinetics of several single-crystal and polvcrystalline silicon carbide materials and singlecrystal silicon in dry oxygen over the temperature range 1200° to 1500°C were fitted to the linear-parabolic model of Deal and Grove.
Journal ArticleDOI

Permeation of Gaseous Oxygen through Vitreous Silica

TL;DR: In this paper, the authors measured the permeation of gaseous oxygen through vitreous silica over the temperature range 950°-1,080° C. in a permeation cell constructed with two portions separated by a thin-walled spherical bulb with a short neck.
Journal ArticleDOI

Oxidation Kinetics of Chemically Vapor‐Deposited Silicon Carbide in Wet Oxygen

TL;DR: In this paper, the oxidation kinetics of chemically vapor-deposited SiC in dry oxygen and wet oxygen (P(sub H2O) = 0.1 atm) at temperatures between 1200 C and 1400 C were monitored using thermogravimetric analysis.
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