Modeling of threshold voltage and subthreshold slope of nanoscale DG MOSFETs
Citations
57 citations
51 citations
Cites background or methods from "Modeling of threshold voltage and s..."
...The application of the compact model in simulation results of FinFETs demonstrates that the simple Vt shift model due to structural confinement (21), including the second effect of biasindependent quantum degradation gate capacitance [35], [36],...
[...]
...This correction results in an increase in the threshold voltage Vt of DG FinFETs by the following amount [35] [36]:...
[...]
...formed by the physical oxide layer and the capacitance developed within the average distance of Δz inside the silicon from the interface [35], [36]....
[...]
38 citations
Cites methods from "Modeling of threshold voltage and s..."
...The short channel threshold voltage models of DG MOSFETs presented by Tsormpatzoglou et al [7] and Hamid et al [8] considered the threshold voltage as a gate voltage at which the minimum carrier charge sheet density invQ reaches a value THQ adequate to achieve the device turn on condition....
[...]
28 citations
Cites background from "Modeling of threshold voltage and s..."
...of the inversion charge results in an increase of the front gate oxide thickness by [25], [26]...
[...]
...Thus, for complete threshold voltage modeling considering for structural confinement along the silicon thickness direction the lowest-sub-band, the quantum effects are modeled with increasing the threshold voltages Vtf and Vtb by the amount [25], [26]...
[...]
22 citations
Cites background from "Modeling of threshold voltage and s..."
...with the following boundary conditions [7]:...
[...]
...[7] presented an analytical model to consider only the effect of channel length on the subthreshold swing parameter of DG-MOSFETs with a doped channel....
[...]
References
716 citations
550 citations
251 citations
236 citations
184 citations