Modelling of epitaxial growth rate of silicon by vapour phase epitaxy

Abstract: A growth-rate model, based on chemical kinetics for vapour phase epitaxy (VPE) of silicon by decomposition of SiCl 4 in a horizontal rectangular reactor at atmospheric pressure, has been developed. The model incorporates the dependence of growth rate on various physical and geometrical parameters, such as temperature, flow rate, mole fraction, position, etc. The results of simulation under appropriate conditions have been found to be in very good agreement with the experimental data available in the literature. Using these data, it has been possible to determine the values of the various rate constants involved in this model.

Abstract: An improved model for simulating the growth of epitaxial silicon in the vapour phase by pyrolysis of silane (SiH4) in a horizontal reactor at atmospheric pressure has been developed. The model takes into account the variation of reactant concentration and the thickness of the boundary layer with distance inside the reactor. Using the above conditions, an expression for the growth rate of the epi-layer has been derived as a function of temperature, flow rate, mole fraction, position of wafer, etc. A comparison between the theoretically predicted values and experimental results shows satisfactory agreement.

Abstract: A model for simulating the growth rate of epitaxial silicon in the vapour phase by pyrolysis of SiH4 in a horizontal reactor in the pressure range 10–500 Torr has been developed. The model takes into account the variation of diffusion coefficient, gas density and surface reaction rate constant with pressure. Using the known dependences of these parameters on pressure, an expression for the growth rate of an epilayer has been derived as a function of temperature, pressure, flow rate, silane mole fraction, position of wafer, etc. The results of simulation under appropriate conditions have been found to be in good agreement with experimental data as available in the literature.

Abstract: The Planar Technology. Solid-State Technology. Vapor-Phase Growth. Thermal Oxidation. Solid-State Diffusion. Semiconductors and Semiconductor Devices. Elements of Semiconductor Physics. Semiconductors under Non-Equilibrium Conditions. p-n Junction. Junction Transistor. Junction Field-Effect Transistors. Surface Effects and Surface-Controlled Devices. Theory of Semiconductor Surfaces. Surface Effects on p-n Junctions. Surface Field-Effect Transistors. Properties of the Silicon-Silicon Dioxide System.

Abstract: The kinetics of silane pyrolysis on a silicon (111) surface has been investigated mass spectrometrically by molecular beam sampling over the silane pressure range Torr and specimen temperature range 20°–1200°C. Silane decomposition was found to occur by the mechanism where both the amount of adsorbed silane and decomposition rate depend linearly on silane pressure. The activation energy for decomposition was and the surface reaction efficiency (α) was found to obey the equation At silane pressures , small quantities of disilane formed by the bimolecular surface reaction were detected with an activation energy for production of .Measurements of silicon growth rate as a function of silane pressure supported the first‐order mechanism for decomposition. The condensation coefficient (σ) of silicon adatoms, determined from measurements of the silicon growth rate as a function of temperature and the surface reaction efficiency, was found to be less than 0.3 over the entire temperature range 700°–1200°C, indicating that the majority of silicon adatoms were desorbed. This behavior was accounted for on the basis of a step flow model for silicon growth and an activation energy for surface diffusion of derived. Addition of arsine to the silane was found to inhibit silane pyrolysis. The measurements suggest an activation energy of for desorption of arsenic adsorbed on the silicon (111) surface. Additions of more than 1% diborane to the silane, on the other hand, resulted in a significant increase in silane reaction efficiency.