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Journal ArticleDOI

Modulated Structures of Homologous Compounds InMO3(ZnO)m(M=In, Ga;m=Integer) Described by Four-Dimensional Superspace Group

01 Sep 1998-Journal of Solid State Chemistry (Academic Press)-Vol. 139, Iss: 2, pp 347-355
TL;DR: In this paper, a superspace group determination based structure model for a one-dimensional modulated structure was proposed for homologous compounds InMO3(ZnO)m(M=In, Ga;m=integer) was observed by using a high-resoultion transmission electron microscope and described based on a four-dimensional superspace groups.
About: This article is published in Journal of Solid State Chemistry.The article was published on 1998-09-01. It has received 1109 citations till now. The article focuses on the topics: Superspace & Space group.
Citations
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Journal ArticleDOI
23 May 2003-Science
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
Abstract: We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO 3 (ZnO) 5 , as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ∼10 6 and a field-effect mobility of ∼80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

2,724 citations

Patent
01 Aug 2008
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

1,501 citations

Patent
25 Sep 2013
TL;DR: In this paper, a connection terminal portion is provided with a plurality of connection pads which are part of the connection terminal, each of which includes a first connection pad and a second connection pad having a line width different from that of the first one.
Abstract: An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

1,136 citations

Journal ArticleDOI
TL;DR: In this paper, a range of amorphous films InGaoO3(ZnO)m (where m ≤ 4) was prepared using a pulsed-laser deposition method, which exhibited an optical bandgap of 2.8-3.0 eV, and an n-type electric conductivity of 170-400 Scm−1 at room temperature.
Abstract: With the purpose of creating ZnO-based amorphous transparent conductors, a range of amorphous films InGaoO3(ZnO)m (where m ≤ 4) was prepared using a pulsed-laser deposition method. The resulting films exhibited an optical bandgap of 2.8-3.0 eV, and an n-type electric conductivity of 170-400 Scm−1 at room temperature, displaying a slight dependence on the value of m, in which the carrier density was 1019-1020 cm−3 the electron mobili ty was 12-20 cm2 V−1 s−1 showing no p n anomaly between Hall and Seebeck coefficients. The conductivity displayed no significant dependence on the temperature ranging from 10 to 300 K. X-ray diffraction, transmission electron microscopy and extended X-ray absorption fine structure measurements confirmed that the films were amorphous phases. A combined use of bremsstrahlung isochromat spectroscopy and ultraviolet photoelectron spectroscopy revealed that the conduction band tail had a large dispersion and that the Fermi level was located at the conduction band edge. The...

1,102 citations

Patent
17 Jan 2006
TL;DR: In this article, the authors propose a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.
Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.

1,043 citations

References
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Journal ArticleDOI
TL;DR: The effective ionic radii of Shannon & Prewitt [Acta Cryst. (1969), B25, 925-945] are revised to include more unusual oxidation states and coordinations as mentioned in this paper.
Abstract: The effective ionic radii of Shannon & Prewitt [Acta Cryst. (1969), B25, 925-945] are revised to include more unusual oxidation states and coordinations. Revisions are based on new structural data, empirical bond strength-bond length relationships, and plots of (1) radii vs volume, (2) radii vs coordination number, and (3) radii vs oxidation state. Factors which affect radii additivity are polyhedral distortion, partial occupancy of cation sites, covalence, and metallic character. Mean Nb5+-O and Mo6+-O octahedral distances are linearly dependent on distortion. A decrease in cation occupancy increases mean Li+-O, Na+-O, and Ag+-O distances in a predictable manner. Covalence strongly shortens Fe2+-X, Co2+-X, Ni2+-X, Mn2+-X, Cu+-X, Ag+-X, and M-H- bonds as the electronegativity of X or M decreases. Smaller effects are seen for Zn2+-X, Cd2+-X, In2+-X, pb2+-X, and TI+-X. Bonds with delocalized electrons and therefore metallic character, e.g. Sm-S, V-S, and Re-O, are significantly shorter than similar bonds with localized electrons.

51,997 citations

Journal ArticleDOI
TL;DR: In this article, homologous compounds of In2O3ZnGa2O4-ZnO system were synthesized by means of solid-state reactions in the mixtures of the starting compound powders with mixing ratio of 1:m at 1550°C.

1,188 citations

Journal ArticleDOI
TL;DR: In this article, the phase relations in the In 2 O 3 -Al 2 ZnO 4 -ZnO system at 1350°C are determined by a classical quenching method.

978 citations

Journal ArticleDOI
TL;DR: A complete list of (3 + 1)-dimensional superspace groups is presented in this article, which describe the symmetry of incommensurate crystal structures with a one-dimensional modulation.
Abstract: A complete list of (3 + 1)-dimensional superspace groups is presented. These groups describe the symmetry of incommensurate crystal structures with a one-dimensional modulation. A short discussion is given of applications. Extinction rules and Bravais types are tabulated in order to facilitate the determination of the superspace-group symmetry.

358 citations

Journal ArticleDOI
TL;DR: The phase relations in the In2O3Ga2ZnO4 system at 1350°C are determined by a classical quenching method.

277 citations