Journal ArticleDOI
Monolithic transformers for silicon RF IC design
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TLDR
A comprehensive review of the electrical performance of passive transformers fabricated in silicon IC technology is presented, and the characteristics of two-port and multiport transformers and baluns are presented from both computer simulation and experimental measurements.Abstract:Â
A comprehensive review of the electrical performance of passive transformers fabricated in silicon IC technology is presented. Two types of transformer construction are considered in detail, and the characteristics of two-port (1:1 and 1:n turns ratio) and multiport transformers (i.e., baluns) are presented from both computer simulation and experimental measurements. The effects of parasitics and imperfect coupling between transformer windings are outlined from the circuit point of view. Resonant tuning is shown to reduce the losses between input and output at the expense of operating bandwidth. A procedure for estimating the size of a monolithic transformer to meet a given specification is outlined, and circuit examples are used to illustrate the applications of the monolithic transformer in RF ICs.read more
Citations
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Journal ArticleDOI
Distributed active transformer-a new power-combining and impedance-transformation technique
TL;DR: In this article, the performance of the newly introduced distributed active transformer (DAT) structure to that of conventional on-chip impedance-transformations methods is analyzed, and a 2.4-GHz 1.9-W 2-V fully integrated power-amplifier achieving a power-added efficiency of 41% with 50/spl Omega/ input and output matching has been fabricated using 0.35-/spl mu/m transistors.
Journal ArticleDOI
Fully integrated CMOS power amplifier design using the distributed active-transformer architecture
TL;DR: In this article, a distributed active transformer is presented to combine several low-voltage push-pull amplifiers efficiently with their outputs in series to produce a larger output power while maintaining a 50/spl Omega/match.
Journal ArticleDOI
Shielded passive devices for silicon-based monolithic microwave and millimeter-wave integrated circuits
T.S.D. Cheung,John R. Long +1 more
TL;DR: Implementation of floating shields for on-chip transmission lines, inductors, and transformers implemented in production silicon CMOS or BiCMOS technologies is compatible with current and projected design constraints for production deep-submicron silicon technologies without process modifications.
Journal ArticleDOI
G/sub m/-boosted common-gate LNA and differential colpitts VCO/QVCO in 0.18-/spl mu/m CMOS
TL;DR: In this article, a g/sub m/-boosted common-gate low-noise amplifier (CGLNA), differential Colpitts voltage-controlled oscillators (VCO), and a quadrature colpitt-voltage controlled oscillator (QVCO) are presented as alternatives to the conventional common-source LNA and cross-coupled VCO/QVOC topologies.
Journal ArticleDOI
Differentially driven symmetric microstrip inductors
M. Danesh,J.R. Long +1 more
TL;DR: In this paper, a differentially excited symmetric inductor that enhances inductor quality (Q) factor on silicon RFICs is presented, and experimental data demonstrate that the differential inductor offers a 50% greater Q factor and a broader range of operating frequencies compared with an equivalent single-ended configuration.
References
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Journal ArticleDOI
Design of Planar Rectangular Microelectronic Inductors
TL;DR: In this paper, the authors derived inductance equations for planar thin- or thick-film coils, comparing equations that include negative mutual inductance with those that do not, and presented a computer program developed for calculating inductances for both square and rectangular geometries, the variables considered being track width, space between tracks, and number of turns.
Journal ArticleDOI
A precise four-quadrant multiplier with subnanosecond response
TL;DR: Among the most signficant presentations in the 50-year history of the ISSCC, Barrie Gilbert's classic paper has become the fifth most frequently cited JSSC article and the first to be cited over 100 times.
Journal ArticleDOI
Analysis, design, and optimization of spiral inductors and transformers for Si RF ICs
Ali M. Niknejad,Robert G. Meyer +1 more
TL;DR: In this article, the authors used classic circuit analysis and network analysis techniques to derive two-port parameters from spiral inductors and transformers and applied them to traditional square and polygon inductors, as well as multilayer metal structures and coupled inductors.
Journal ArticleDOI
The modeling, characterization, and design of monolithic inductors for silicon RF IC's
J.R. Long,M.A. Copeland +1 more
TL;DR: In this paper, the results of a comprehensive investigation into the characteristics and optimization of inductors fabricated with the top-level metal of a submicron silicon VLSI process are presented.
Journal ArticleDOI
Properties of Microstrip Line on Si-SiO/sub 2/ System
H. Hasegawa,M. Furukawa,H. Yanai +2 more
TL;DR: In this article, a parallel-plate waveguide model for the microstrip line formed on the Si-SiO/sub 2/ system is analyzed theoretically and the results are compared with the experiment.
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