Journal ArticleDOI
MOSFET Models for VLSI Circuit Simulation
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This article is published in Microelectronics Journal.The article was published on 1993-01-01. It has received 259 citations till now. The article focuses on the topics: BSIM & Discrete circuit.read more
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Fundamentals of Modern VLSI Devices
Yuan Taur,Tak H. Ning +1 more
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Journal ArticleDOI
Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec
TL;DR: In this paper, a 70-nm n-channel tunneling field effect transistor (TFET) with sub-threshold swing (SS) of 52.8 mV/dec at room temperature was demonstrated.
Journal ArticleDOI
Low-power logic styles: CMOS versus pass-transistor logic
R. Zimmermann,Wolfgang Fichtner +1 more
TL;DR: This paper shows that complementary CMOS is the logic style of choice for the implementation of arbitrary combinational circuits if low voltage, low power, and small power-delay products are of concern.
Journal ArticleDOI
Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors.
Woong-Ki Hong,Jung Inn Sohn,Dae-Kue Hwang,Soonshin Kwon,Gunho Jo,Sunghoon Song,Seong-Min Kim,Hang-Ju Ko,Seong-Ju Park,Mark E. Welland,Takhee Lee +10 more
TL;DR: The surface morphology and size-dependent tunable electronic transport properties of the ZnO nanowires were characterized using a nanowire field effect transistor (FET) device structure and the FETs made from smooth ZnNO Nanowires with a larger diameter exhibited negative threshold voltages, indicating n-channel depletion-mode behavior.
Journal ArticleDOI
An explicit surface-potential-based MOSFET model for circuit simulation
TL;DR: In this paper, a compact MOSFET model based on terms of surface potential is presented, which combines the accuracy of implicit single-piece models and the short calculation time of regional models.