Journal ArticleDOI
Multi-temperature deposition scheme for improved resistive switching behavior of Ti/AlOx/Ti MIM structure
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TLDR
In this article, a 40-nm AlO x-based resistive random access memory was fabricated with a new multi-temperature deposition (MTD) scheme, where a 40nm thick AlOx film was deposited with temperature-thickness sequence of 150°C (10nm)/80 −C (20 −nm)/150 −C(10 −nm), and the conduction mechanism has been explained as ohmic and space charge limited conduction at lower and higher voltages respectively.About:
This article is published in Solid State Ionics.The article was published on 2017-10-15. It has received 8 citations till now. The article focuses on the topics: Resistive touchscreen & Ohmic contact.read more
Citations
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Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application.
Zongjie Shen,Zongjie Shen,Chun Zhao,Chun Zhao,Yanfei Qi,Yanfei Qi,Wangying Xu,Yina Liu,Ivona Z. Mitrovic,Li Yang,Cezhou Zhao,Cezhou Zhao +11 more
TL;DR: The bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short- term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity(STDP) reveal the great potential of R RAM devices in the field of neuromorphic application.
Journal ArticleDOI
Resistive Random Access Memory: A Review of Device Challenges
TL;DR: The basic aspects of RRAMs are explained, their advantages are highlighted and the challenges involved in replacing the existing memory technologies with R RAMs are elucidated.
Journal ArticleDOI
Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus-SnSe2 Heterostructure.
TL;DR: A novel type of TFET which is composed of a thin black phosphorus–tin diselenide (BP–SnSe2) heterostructure which enables device operation either as an Esaki diode featuring negative differential resistance (NDR) in the negative gate voltage regime or as a backward diode in the positive gate bias regime.
Journal ArticleDOI
Reversible Negative Resistive Switching in an Individual Fe@Al2O3 Hybrid Nanotube for Nonvolatile Memory.
TL;DR: The bias-governed reversible negative RS with superior stability, reversibility, nondestructive readout, and remarkable cycle performance makes it a potential candidate in next-generation erasable nonvolatile resistive random access memories.
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Insight into interface behavior and microscopic switching mechanism for flexible HfO2 RRAM
Jingwei Zhang,Fang Wang,Fang Wang,Chuang Li,Xin Shan,Ange Liang,Kai Hu,Yue Li,Qi Liu,Yaowu Hao,Kailiang Zhang +10 more
TL;DR: In this article, a flexible HfO2 resistive random access memory (RRAM) was fabricated on a polyimide (PI) substrate, and the effect of different top electrodes (TE) on RRAM characteristics were investigated with the same TiN bottom electrode.
References
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Journal ArticleDOI
Reproducible switching effect in thin oxide films for memory applications
TL;DR: In this article, it was shown that positive or negative voltage pulses can switch the resistance of the oxide films between a low- and a high-impedance state in times shorter than 100 ns.
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Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
TL;DR: This work provides an overview of the current understanding of bipolar-switching RRAM operation, reliability and scaling, and the stability of the low- and high-resistance states will be discussed in terms of conductance fluctuations and evolution in 1D filaments containing only a few atoms.
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Resistive switching phenomena: A review of statistical physics approaches
TL;DR: In this paper, the authors provide an overview of the underlying physics behind connectivity changes in highly conductive regions under an electric field, and discuss percolation model approaches and the theory for the scaling behaviors of numerous transport properties observed in RS.
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Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactor
van Jl Hans Hemmen,Sbs Stephan Heil,Johan Hendrik Klootwijk,Fred Roozeboom,Chris Hodson,van de Mcm Richard Sanden,Wmm Erwin Kessels +6 more
TL;DR: In this article, the authors compared the performance of remote plasma ALD with thermal ALD in the Oxford Instruments FlexAL this article and compared the results from both the two processes.
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Influence of the Deposition Temperature on the c-Si Surface Passivation by Al2O3 Films Synthesized by ALD and PECVD
TL;DR: In this article, the material properties and c-Si surface passivation have been investigated for Al 2 O 3 films deposited using thermal and plasma atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) for temperatures between 25 and 400°C.