Proceedings ArticleDOI
Multiple gate MOSFETs: The road to the future
A. DasGupta
- pp 96-101
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TLDR
In this article, the advantages of multiple gate MOSFETs (MuGFETs) are discussed and the interesting concept of operation of a fully depleted single-gate SOI MOS-FET as a virtual double-gate MOSFCET is highlighted.Abstract:
The advantages of multiple gate MOSFETs (MuGFETs) are discussed The interesting concept of operation of a fully depleted single gate SOI MOSFET as a virtual double gate MOSFET is highlighted Also, the advantages of lower gate leakage current and short-channel effects in MuGFETs are discussed in detailread more
Citations
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Journal ArticleDOI
Physical Scaling Limits of FinFET Structure: A Simulation Study
Gaurav Saini,Ashwani K. Rana +1 more
TL;DR: In this article, the scaling limits of double gate underlap and triple gate (TG) overlap FinFET structure using 2D and 3D computer simulations respectively, and it is found that the gate-length (L) and fin-thickness (T fin ) ratio plays a key role while deciding the performance of the device.
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Modelling of Graphene Field-Effect Transistor for electronic sensing applications
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Quantum Mechanical Effects in Bulk MOSFETs from a Compact Modeling Perspective: A Review
TL;DR: In this article, the QM effects in bulk MOSFETs and their modeling approaches in the compact modeling framework are reviewed, as the device dimensions are scaled to the sub-100 n.
Proceedings ArticleDOI
Leakage behavior of underlap FinFET structure: A simulation study
TL;DR: An attempt has been made to analyze the underlap FinFET structure using 2D simulation using ITRS 2009 high performance updates for the year of 2015 to study the effects of metal gate with high-k dielectric and effects of gate workfuction variation on the performance of underlap FET structure.
References
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Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Journal ArticleDOI
FinFET-a self-aligned double-gate MOSFET scalable to 20 nm
Digh Hisamoto,Wen-Chin Lee,J. Kedzierski,Hideki Takeuchi,K. Asano,C. Kuo,Erik H. Anderson,Tsu-Jae King,Jeffrey Bokor,Chenming Hu +9 more
TL;DR: In this paper, a self-aligned double-gate MOSFET, FinFET was proposed by using boron-doped Si/sub 04/Ge/sub 06/ as a gate material.
Journal ArticleDOI
Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
TL;DR: The double-gate control of silicon-on-insulator (SOI) transistors is used to force the whole silicon film (interface layers and volume) in strong inversion as discussed by the authors.
Journal ArticleDOI
Multiple-gate SOI MOSFETs: device design guidelines
TL;DR: In this paper, the authors describe computer simulations of various SOI MOSFETs with double and triple-gate structures, as well as gate-all-around devices.