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Multiple-quantum NMR study of clustering in hydrogenated amorphous silicon.

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TLDR
Using the fact that multiple-quantum excitation is limited by the size of the dipolar-coupled spin system, it is shown that the predominant bonding environment for hydrogen is a cluster of four to seven atoms.
Abstract
Multiple-quantum nuclear-magnetic-resonance techniques are used to study the distribution of hydrogen in hydrogenated amorphous silicon. Using the fact that multiple-quantum excitation is limited by the size of the dipolar-coupled spin system, we show that the predominant bonding environment for hydrogen is a cluster of four to seven atoms. For device quality films, the concentration of these cluster defects increases with increasing hydrogen content. At very high hydrogen content, the clusters are replaced with a continuous network of silicon-hydrogen bonds.

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Lawrence Berkeley National Laboratory
Recent Work
Title
MULTIPLE QUANTUM NMR STUDY OF CLUSTERING IN HYDROGENATED AMORPHOUS
SILICON
Permalink
https://escholarship.org/uc/item/3cb1z5v2
Author
Baum, J.
Publication Date
1985-12-01
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University of California

.....
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LBL-20924
Preprint
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Lawrence
Berkeley
Laboratory
UNIVERSITY
OF
CALIFORNIA
Materials & Molecular
Research Division
Submitted
to
Physical
Review
Letters
MULTIPLE
QUANTUM
NMR
STUDY
OF
CLUSTERING
IN
HYDROGENATED
AMORPHOUS
SILICON
J.
Baum,
K.K.
Gleason,
A.
Pines,
A.N.
Garroway,
and
J.A.
Reimer
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December
1985
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Prepared
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Contract
DE-AC03-76SF00098

DISCLAIMER
This document was prepared
as
an account
of
work sponsored by the United States
Government. While this document is believed to contain correct information, neither the
United States Government nor any agency thereof, nor the Regents
of
the University
of
California, nor any
of
their employees, makes any warranty, express
or
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information, apparatus, product, or process disclosed, or represents that its use would not
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University
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California.

~/
LBL-20924
MULTIPLE
QUANTUM
NMR
STUDY
OF
CLUSTERING
IN
HYDROGENATED
AMORPHOUS
SILICON
J.
Bauma,
K. K.
Gleasonb,
A.
Pinesa,
A.
N.
Garrowayc,
and
J.
A.
Reimerb
University
of
California,
Berkeley,
CA
94720
PACS
numbers:
61.16.Hn,
07.58.+g,
~3.60.Fw
aDepartment
of
Chemistry,
University
of
California,
and
Materials
and
Molecular
Research
Division,
Lawrence
Berkeley
Laboratory.
bDepartment
of
Chemical
Engineering,
University
of
California.
cPermanent
address:
Code 6120,
Naval
Research
Laboratory,
Washington
D.C.
20375-5000.

1
Abstract
Multiple
quantum
nuclear
magnetic
resonance
techniques
are
used
to
study
the
distribution
of
hydrogen
in
hydrogenated
amorphous
silicon.
Using
the
fact
that
multiple
quantum
excitation
is
iimited
by
the
size
of
the
dipolar-coupled
spin
system,
we
show
that
the
predominant
bonding
environment
for
hydrogen
is
a
cluster
of
approximately
six
atoms.
For
device
quality
films,
the
concentration
of
these
six-atom
defects
increases
with
increasing
hydrogen
content.
At
very
high
hydrogen
content,
the
clusters
are
replaced
with
a
continuous
network
of
silicon-hydrogen
bonds.
·~
r·.

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Vacancies and voids in hydrogenated amorphous silicon

TL;DR: In this article, the authors studied the hydride configurations in the hydrogenated amorphous silicon (a-Si:H) network by means of infrared absorption spectroscopy.
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