Journal ArticleDOI
Nanocrack formation due to inverse piezoelectric effect in AlGaN/GaN HEMT
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TLDR
In this paper, the Griffith's Equation and inverse piezo electric effect were used to show how physical degradation affects electrical properties of the device and also how cracks are generated in AlGaN epitaxial layer.About:
This article is published in Superlattices and Microstructures.The article was published on 2019-01-01. It has received 9 citations till now. The article focuses on the topics: High-electron-mobility transistor.read more
Citations
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Journal ArticleDOI
Perovskite solar cell-hybrid devices: thermoelectrically, electrochemically, and piezoelectrically connected power packs
Fatemeh Zabihi,Mike Tebyetekerwa,Zhen Xu,Aizaz Ali,Alex Kwasi Kumi,Hui Zhang,Rajan Jose,Seeram Ramakrishna,Shengyuan Yang +8 more
TL;DR: In this paper, the means of integrating different devices with perovskite solar cells (PSCs) to form hybrid packs are discussed, and the factors contributing toward the efficiency and mechanical robustness of PSCs and their hybrid devices upon integration are investigated.
Journal ArticleDOI
Optimization of π – Gate AlGaN/AlN/GaN HEMTs for Low Noise and High Gain Applications
TL;DR: In this article, the authors present a TCAD-based assessment to evaluate the intrinsic gain and minimum noise figure metrics of the T- Gate, and the π- Gate AlGaN/AlN/GaN HEMTs along with their recessed architectures.
Journal ArticleDOI
Recent progress of physical failure analysis of GaN HEMTs
Xiaolong Cai,Xiaolong Cai,Chenglin Du,Zixuan Sun,Ran Ye,Haijun Liu,Yu Zhang,Xiangyang Duan,Hai Lu +8 more
TL;DR: In this article, common physical characterization techniques for post failure analyses are introduced, several failure mechanisms and corresponding failure phenomena are reviewed and summarized, and finally device optimization methods are discussed. However, GaN HEMTs suffer from degradations and even failures during practical applications, making physical analyses of post-failure devices extremely significant for reliability improvements and further device optimizations.
Journal ArticleDOI
Modelling of InAs nanowire and MOSFET under phonon emission and absorption by using NEGF formalism
TL;DR: In this article, the performance of InAs nanowire (NW) and its based superlattice MOSFET under optical phonon absorption and emission was compared. And the results indicated fluctuations in the NW characteristics like density of states (DOS), scattering rate, mobility, effective transmission and current.
Proceedings ArticleDOI
Characterization of Flexible Piezoelectric Cantilever in Vibration Energy Harvesting
Edgar Irwin Michael Pawing,K. A. Ahmad,Samsul Setumin,Adi Irfan Che-Ani,Mohamad Adha Mohamad Idin,A. Ahmad,Muhammad Khusairi Osman,R. Boudville +7 more
TL;DR: In this article , a flexible piezoelectric cantilever was tested for characterized cantilevers in vibration energy harvesting, such as length, width and thickness, and the simulation result and performance of each design was compared.
References
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Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
GaN HEMT reliability
J.A. del Alamo,Jungwoo Joh +1 more
TL;DR: This paper reviews the experimental evidence behind a new failure mechanism recently identified in GaN high-electron mobility transistors subject to electrical stress and suggests several paths to enhance the electrical reliability of GaN HEMTs.
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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors
Jungwoo Joh,J.A. del Alamo +1 more
TL;DR: In this article, a critical drain-to-gate voltage beyond which GaN high-electron mobility transistors start to degrade in electrical-stress experiments was found, which is consistent with a degradation mechanism based on crystallographic defect formation due to the inverse piezoelectric effect.
Journal ArticleDOI
Extensional piezoelectric coefficients of gallium nitride and aluminum nitride
TL;DR: In this paper, measurements of piezoelectric coefficients d33 and d31 in wurtzite GaN and AlN using an interferometric technique are presented.
Proceedings ArticleDOI
Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors
Jungwoo Joh,J.A. del Alamo +1 more
TL;DR: In this paper, the authors carried out systematic experiments of the electrical reliability of state-of-the-art GaN HEMTs and found that degradation is mostly driven by electric field and that there is a critical electric field below which negligible degradation is observed.