Nature of electronic states in atomically thin MoS₂ field-effect transistors.
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Cites background from "Nature of electronic states in atom..."
...24 The reason is likely that the trap/impurity states exist at the SiO2 surface in the bottom gate FETs, and the scattering from these charged impurities degrades the device mobility.(24,32,33) Reduction of the surface traps/impurities in the bottom gate dielectric is expected to improve themobility of such a single-layer MoS2 based bottom-gate FET devices....
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"Nature of electronic states in atom..." refers methods in this paper
...Devices were prepared by standard mechanical exfoliation of bulk MoS2 on 300 nm SiO2 on n ++ doped silicon substrate using scotch tape technique.(12,13) The flakes were identified using optical microscope and characterized via Raman spectroscopy and atomic force microscopy (AFM)....
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"Nature of electronic states in atom..." refers background or result in this paper
...These results bear close resemblance to the characteristics reported recently for high mobility MoS2 devices.(4) As shown in the supplementary information, IDS−VDS characteristics become nonlinear at large VDS , particularly at low temperatures (T ), although we attribute this to the insulating nature of the devices which...
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...This has recently led to the fabrication of single-layer MoS2 field effect transistor that has a very high on-off ratio due to a finite bandgap.(4) It has been demonstrated that the bandgap is indirect (≈ 1....
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10,586 citations
"Nature of electronic states in atom..." refers methods in this paper
...Devices were prepared by standard mechanical exfoliation of bulk MoS2 on 300 nm SiO2 on n ++ doped silicon substrate using scotch tape technique.(12,13) The flakes were identified using optical microscope and characterized via Raman spectroscopy and atomic force microscopy (AFM)....
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8,188 citations