Neutral Impurity Scattering in Semiconductors
About: This article is published in Physical Review.The article was published on 1950-09-15. It has received 504 citations till now. The article focuses on the topics: Ionized impurity scattering & Anderson impurity model.
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TL;DR: In this paper, the authors provide numerical and graphical information about many physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material, including properties of the material itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage.
Abstract: This review provides numerical and graphical information about many (but by no means all) of the physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material. The emphasis is on properties of GaAs itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage. The geometry of the sphalerite lattice and of the first Brillouin zone of reciprocal space are used to pave the way for material concerning elastic moduli, speeds of sound, and phonon dispersion curves. A section on thermal properties includes material on the phase diagram and liquidus curve, thermal expansion coefficient as a function of temperature, specific heat and equivalent Debye temperature behavior, and thermal conduction. The discussion of optical properties focusses on dispersion of the dielectric constant from low frequencies [κ0(300)=12.85] through the reststrahlen range to the intrinsic edge, and on the ass...
2,115 citations
TL;DR: In this article, a detailed description of the conduction mechanism and the main parameters that control the conductivity of ITO films are presented, on account of the large varieties and differences in the fabrication techniques.
Abstract: Tin doped indium oxide (ITO) films are highly transparent in the visible region, exhibiting high reflectance in the infrared region, and having nearly metallic conductivity. Owing to this unusual combination of electrical and optical properties, this material is widely applied in optoelectronic devices. The association of these properties in a single material explains the vast domain of its applicability and the diverse production methods which have emerged. Although the different properties of tin doped indium oxide in the film form are interdependent, this article mainly focuses on the electrical aspects. Detailed description of the conduction mechanism and the main parameters that control the conductivity is presented. On account of the large varieties and differences in the fabrication techniques, the electrical properties of ITO films are discussed and compared within each technique.
876 citations
TL;DR: In this article, a defect model for tin-doped In2O3:Sn is developed, which comprises two kinds of interstitial oxygen, one of which is loosely bound to tin, the other forming a strongly bound Sn2O4 complex.
Abstract: Tin-doped In2O3 layers were prepared by the spray technique with doping concentrationsc
Sn between 1 and 20 at. % and annealed at 500 °C in gas atmospheres of varying oxygen partial pressures. The room-temperature electrical properties were measured. Maximum carrier concentrationsN=1.5×1021cm−3 and minimum resistivities ϱ=1.3×10−4 Ω cm are obtained if the layers are doped withc
Sn≈9 at. % and annealed in an atmosphere of oxygen partial pressurep
O2 ⋦10−20 bar. At fixed doping concentration, the carrier mobility increases with decreasing oxygen pressure. The maximum obtainable mobility can be described in terms of electron scattering by ionized impurities. From an analysis of the carrier concentration and additional precision measurements of the lattice constants and film thicknesses, a defect model for In2O3:Sn is developed. This comprises two kinds of interstitial oxygen, one of which is loosely bound to tin, the other forming a strongly bound Sn2O4 complex. At low doping concentrationc
Sn≲4 at. % the carrier concentration is governed by the loosely bound tin-oxygen defects which decompose if the oxygen partial pressure is low. The carrier concentration follows from a relationN=K
1 ·p
O2
−1/8 ·(3 ×1010 × cSn −N)1/4 with an equilibrium constantK
1=1.4×1015 cm−9/4bar1/8, determined from our measurements.
551 citations
TL;DR: In this paper, the authors compared the dependences of the effective Hall mobility on the carrier concentration of indium-tin oxide and ITO and found that grain barriers limit the carrier mobility in ZnO for carrier concentrations as high as 2.
343 citations
TL;DR: In this paper, the authors discuss the motion of electrons in energy bands under the influence of external electric and magnetic fields, presenting an elementary theory of the cyclotron resonance experiment as an example.
Abstract: Publisher Summary This chapter outlines the general principles of energy band theory relevant to the semiconductor problem It discusses the motion of electrons in energy bands under the influence of external electric and magnetic fields, presenting an elementary theory of the cyclotron resonance experiment as an example This, in turn, serves as a natural point to summarize the current picture of the continuous energy levels of Ge and Si as it has developed quantitatively from the experiments, and in the light of theory The theory of localized states is discussed with special emphasis on the influence of the complex structures of the valence and conduction bands in modifying the simple theory of hydrogen-like impurities Qualitative discussion is also given of the localized levels provided by other than hydrogenic impurities, and of the levels produced by surfaces and by dislocations The chapter also discusses how the energy level picture is to be used in the statistical mechanical calculation of the equilibrium properties of semiconductors It presents the phenomenological theory of the electrical conductivity, Hall effect, magnetoresistance, and thermoelectric power of Ge and Si, stressing the influence of the complex band structure The chapter reviews the optical properties of Ge and Si in terms of the different classes of allowed and forbidden transitions which may occur on the energy level diagram
317 citations