New Mobility Model for Accurate Modeling of Transconductance in FDSOI MOSFETs
Citations
15 citations
Cites methods from "New Mobility Model for Accurate Mod..."
..., different front/back interface and front/back gate bias conditions, we have developed the effective mobility model [7] as:...
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2 citations
Cites background from "New Mobility Model for Accurate Mod..."
...This dissertation presented the advanced research on compact models for the state-of-the art transistor and memory technologies: FDSOIs, FinFETs, TFETs, NCFETs, and MTJs. Due to the limitations in the aggressively scaled planar transistors, the devices with good electrostatic control are discussed and modeled into the industry standard model − BSIM-IMG for FDSOIs and BSIM-CMG for multi-gate FETs....
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...Since various flavors of transistor architectures like FDSOIs and FinFETs are proposed to improve device performances, the accurate, fast, and robust compact models, which are capable of reproducing the very complicated transistor characteristics like transconductance, are urgently required....
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...Although the dynamic back-gate bias change help reduce the static power in FDSOIs, the leakages, overlap capacitance, and carrier transport are thus showing back-gate bias-dependence....
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...However, such applied VBG alters the electrostatics in the channel, leading to backgate bias-dependent physical phenomena in FDSOIs [24, 42]....
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1 citations
References
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"New Mobility Model for Accurate Mod..." refers background or methods in this paper
...[24] Y. Sahu, P. Kushwaha, A. Dasgupta, C. Hu, and Y. S. Chauhan, “Compact modeling of drain current thermal noise in FDSOI MOSFETs including back-bias effect,” IEEE Trans....
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...Thus, there is a need to develop a model for FDSOI MOSFETs with thick front-gate oxides....
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...Thus, the mobility formulas for front- and back-side channels of FDSOI MOSFETs are similar but the parameters are separated....
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...A thick front-gate oxide is also used in image sensor applications with FDSOI MOSFETs [13], [14], where the noise density is reduced by the thick front-gate oxide [15]....
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...Note that the device dimensions and bias conditions are similar to that in [13]....
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154 citations
"New Mobility Model for Accurate Mod..." refers background in this paper
...The threshold voltage of FDSOI MOSFET can be adjusted by the back-gate voltage (VBG) without relying on channel doping concentration control for multiple devices [3], [4]....
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