Journal ArticleDOI
Ni-Al-Ti ohmic contacts on Al implanted 4H-SiC
Paolo Fedeli,Maurizio Puzzanghera,Francesco Moscatelli,R. A. Minamisawa,Giovanni Alfieri,Ulrike Grossner,Roberta Nipoti +6 more
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TLDR
In this article, an Al-Ti bilayer with an Al to Ti atomic ratio suitable for ohmic contacts on p-type 4H-SiC can be covered by a Ni film without altering the ohmic nature, while eliminating a detrimental contact morphology caused by the presence of molten Al-Si during alloying.Abstract:
This study shows that an Al-Ti bilayer with an Al to Ti atomic ratio suitable for ohmic contacts on p-type 4H-SiC can be covered by a Ni film during the high temperature alloying process, without altering the ohmic nature, while eliminating a detrimental contact morphology caused by the presence of molten Al-Si during alloying. On 1×1020 cm−3 Al-implanted 4H-SiC layer, the RT specific contact resistance of this Ni-Al-Ti contact measured by TLM-C method is (3 ± 1)×10−6 Ωcm2.read more
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Journal ArticleDOI
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Fabrizio Roccaforte,Patrick Fiorenza,Giuseppe Greco,Raffaella Lo Nigro,Filippo Giannazzo,Ferdinando Iucolano,Mario Saggio +6 more
TL;DR: In this article, the authors review some emerging trends in the processing of wide band gap (WBG) semiconductor devices (e.g., diodes, MOSFETs, HEMTs, etc.).
Journal ArticleDOI
A critical review of theory and progress in Ohmic contacts to p-type SiC
TL;DR: In this paper, a review of recent progress in Ohmic contacts to p-type SiC reported in literature is presented, focusing on the formation mechanism of p-Type SiC Ohmic contact along with future perspectives for research approaches.
Journal ArticleDOI
Metal/semiconductor contacts to silicon carbide: Physics and technology
Fabrizio Roccaforte,Marilena Vivona,Giuseppe Greco,Raffaella Lo Nigro,Filippo Giannazzo,Simone Rascuna,Mario Saggio +6 more
TL;DR: In this article, the role of the barrier and the carrier transport mechanism at the interfaces of metal/semiconductor interfaces to SiC is discussed. But the authors focus on n-type and p-type interfaces.
Journal ArticleDOI
Ni-Al-Ti Ohmic Contacts with Preserved Form Factor and Few 10- 4 Ωcm2 Specific Resistance on 0.1-1 Ωcm p-Type 4H-SiC
TL;DR: In this article, a thin Ni film on Al/Ti/4H-SiC metal pads was shown to preserve the pad form factor during a 1000 °C/2 min treatment, provided that the Al and Ti film thicknesses are sufficiently thin.
Proceedings ArticleDOI
Impact of the Activation of Carbon Vacancies at High Temperatures on the Minority Carrier Lifetimes in the Intrinsic Area of 4H-SiC PiN Rectifier
TL;DR: In this paper, the temperature dependent behavior of a high power 4H-SiC PiN-diode was investigated by the adjustment of measured forward characteristics and quasistatic TCAD simulations in a temperature range from RT up to 773 K.
References
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Book
Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Semiconductor Material and Device Characterization, 3rd Edition
Abstract: DESCRIPTION This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques.
Journal ArticleDOI
Development of Ni/Al and Ni/Ti/Al ohmic contact materials for p-type 4H-SiC
Ryohei Konishi,Ryuichi Yasukochi,Osamu Nakatsuka,Yasuo Koide,Miki Moriyama,Masanori Murakami +5 more
TL;DR: In this paper, the Ni/Al and Ni/Ti/Al ohmic contact materials were developed by depositing on p-type 4H-SiC substrates with doping concentrations (N A ) of 3.0-9.0×10 18 cm −3 and subsequently annealing at 800°C in an ultra high vacuum chamber.
Journal ArticleDOI
Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC
TL;DR: In this paper, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts were investigated using x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC.
Journal ArticleDOI
Carbon-Cap for Ohmic Contacts on Ion-Implanted 4H-SiC
Roberta Nipoti,Fulvio Mancarella,Francesco Moscatelli,Rita Rizzoli,Stefano Zampolli,M. Ferri +5 more
TL;DR: In this paper, a pyrolyzed photoresist film called carbon-cap (C-cap) is used as a protective cap of the surface of ion-implanted 4H-SiC wafers during the postimplantation annealing process with the aim to prevent Si sublimation and step bunching formation.