Noise modeling methodologies in the presence of mobility degradation and their equivalence

doi:10.1109/TED.2005.862703

Home
/
Papers
/
Noise modeling methodologies in the presence of mobility degradation and their equivalence

Journal Article•DOI•

Noise modeling methodologies in the presence of mobility degradation and their equivalence

A. S. Roy, Christian Enz, Jean-Michel Sallese

23 Jan 2006-IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers)-Vol. 53, Iss: 2, pp 348-355

TL;DR: In this article, a general expression of induced gate noise was presented, which is valid for any mobility model and some very general expressions of noise parameters that can be used for noise modeling with any kind of mobility model.

read less

Abstract: For compact modeling of the noise in devices, one of the following three methods is usually applied: 1) An equivalent circuit based approach, 2) the classical Langevin or Klaassen-Prins approach, or 3) the impedance field method. It is well known that for long-channel MOST (where mobility degradation due to a lateral field is absent), all three methods obtain the same result. But it is still not recognized how these methodologies need to be changed when the mobility starts to depend on the electric field. In this work we demonstrate how these methodologies can be adapted to incorporate mobility degradation and show that for any arbitrary mobility model /spl mu/(E) all the methods yield the same expressions for induced gate and drain noise current, which demonstrates the equivalence of the methods. We also present, for the first time, a general expression of induced gate noise which is valid for any mobility model (an expression of the drain current noise was already presented in our previous work) and some very general expressions of noise parameters that can be used for noise modeling with any kind of mobility model.

...read moreread less

Citations

PDF

Open Access

More filters

Journal Article•DOI•

High-Frequency Noise of Modern MOSFETs: Compact Modeling and Measurement Issues

[...]

M.J. Deen¹, Chih-Hung Chen¹, S. Asgaran¹, G.A. Rezvani², Jon Tao², Y. Kiyota³ - Show less +2 more•Institutions (3)

McMaster University¹, RF Micro Devices², Sony Broadcast & Professional Research Laboratories³

21 Aug 2006-IEEE Transactions on Electron Devices

TL;DR: In this paper, the most important high-frequency (HF) noise sources of the MOSFETs are modeled, along with challenges in noise measurement and de-embedding of future CMOS technologies.

...read moreread less

Abstract: Compact modeling of the most important high-frequency (HF) noise sources of the MOSFET is presented in this paper, along with challenges in noise measurement and deembedding of future CMOS technologies. Several channel thermal noise models are reviewed and their ability to predict the channel noise of extremely small devices is discussed. The impact of technology scaling on noise performance of MOSFETs is also investigated by means of analytical expressions. It is shown that the gate tunneling current has a significant impact on MOSFETs noise parameters, especially at lower frequencies. Limitations of some commonly used noise models in predicting the HF noise parameters of modern MOSFETs are addressed and methods to alleviate some of the limitations are discussed

...read moreread less

113 citations

Cites methods from "Noise modeling methodologies in the..."

...For a more detailed discussion on the issue of incorporating mobility degradation due to the lateral electric field in channel noise modeling, the reader is referred to a recently published work [31]....
[...]

Journal Article•DOI•

Compact Noise Models for MOSFETs

[...]

Renuka P. Jindal¹•Institutions (1)

University of Louisiana at Lafayette¹

21 Aug 2006-IEEE Transactions on Electron Devices

TL;DR: A physical understanding of both intrinsic and extrinsic noise mechanisms in a MOSFET is developed in this article, where a survey of current public domain MOS models is presented, and a lack of comprehensive coverage of noise models is noted.

...read moreread less

Abstract: A physical understanding of both intrinsic and extrinsic noise mechanisms in a MOSFET is developed. Intrinsic noise mechanisms fundamental to device operation include channel thermal noise, induced gate noise, and induced substrate noise. While the effect of channel thermal noise is observable at zero drain-to-source voltage, the induced gate and substrate noise do not manifest themselves under these conditions. However, the attendant fluctuations in the channel charge are observable by the passage of electric current through the device. Extrinsic noise mechanisms manifested due to structural evolution of the MOSFET include the distributed gate resistance noise, distributed substrate resistance noise, bulk charge effects, substrate current supershot noise, gate current noise, excess channel noise, and 1/f noise. Where available, compact noise models covering these noise mechanisms are explained. Also, where possible, methods of suppression of these mechanisms are highlighted. A survey of current public domain MOS models is presented, and a lack of comprehensive coverage of noise models is noted. Open areas of MOSFET noise research in the sub-hundred-nanometer regime are also highlighted. With suitable adaptation, noise concepts elucidated in the context of MOS transistors have a much wider applicability to the operation of HEMTs, JFETs, MESFETs, and other field-effect devices

...read moreread less

107 citations

Cites methods from "Noise modeling methodologies in the..."

...This includes enhancement of noise modeling methodologies [112], [118] in connection...
[...]

Journal Article•DOI•

RF-Noise Modeling in Advanced CMOS Technologies

[...]

G.D.J. Smit¹, Andries J. Scholten¹, Ralf Pijper¹, L. F. Tiemeijer¹, Ramses van der Toorn², D. B. M. Klaassen¹ - Show less +2 more•Institutions (2)

NXP Semiconductors¹, Delft University of Technology²

01 Feb 2014-IEEE Transactions on Electron Devices

TL;DR: In this article, a detailed derivation and discussion are presented of the microscopic excess noise model, which is shown to qualitatively explain the observed noise (across bias and geometry) in a wide range of commercially available sub-100nm foundry processes.

...read moreread less

Abstract: RF circuit design in deep-submicrometer CMOS technologies relies heavily on accurate modeling of thermal noise. Based on Nyquist's law, predictive modeling of thermal noise in MOSFETs was possible for a long time, provided that parasitic resistances and short-channel effects were properly accounted for. In sub-100-nm technologies, however, microscopic excess noise starts to play a significant role and its incorporation in thermal noise models is unavoidable. Here, we will review several crucial ingredients for accurate RF noise modeling, with emphasis on sub-100-nm technologies. In particular, a detailed derivation and discussion are presented of our microscopic excess noise model. It is shown to qualitatively explain the observed noise (across bias and geometry) in a wide range of commercially available sub-100-nm foundry processes. Besides, the impact of excess noise on the minimum noise figure is discussed.

...read moreread less

38 citations

Cites background or methods from "Noise modeling methodologies in the..."

..., (55) in [22] or (13) in [24]), they are in fact still equivalent (or in good approximation equal to) the basic noise source in (3), where T is the lattice temperature and not the noise temperature or carrier temperature, see also [23]....
[...]
...It serves as the basis for the noise model implementation in various compact MOS transistor models [21], [22]....
[...]
...with i = 0, 1, and using the improved Klaassen–Prins approach [20], [22]....
[...]
...An interesting justification of the use of (3) in the presence of velocity saturation can be found from the work of Roy [22], see Appendix B for details....
[...]

Journal Article•DOI•

Compact Channel Noise Models for Deep-Submicron MOSFETs

[...]

Zhiyuan Li¹, Jian-Guo Ma, Yizheng Ye¹, Mingyan Yu¹•Institutions (1)

Harbin Institute of Technology¹

05 May 2009-IEEE Transactions on Electron Devices

TL;DR: In this paper, a compact channel noise model valid in all regions of operation for deep-submicron MOSFETs has been developed and experimentally verified, and the physics-based expressions for thermal noise and flicker noise and corner frequency constitute compact channel noises models.

...read moreread less

Abstract: In this paper, compact channel noise models valid in all regions of operation for deep-submicron MOSFETs have been developed and experimentally verified. The physics-based expressions for thermal noise and flicker noise and corner frequency constitute compact channel noise models. The carrier heating, channel-length modulation, and mobility degradation due to the lateral electric field have been incorporated in the models. The effect of the mobility and carrier number fluctuations on the flicker noise, as well as the dependence of the mobility limited by Coulomb scattering on the inversion carrier density, have been considered in the flicker noise model. The measurement results validate the proposed models.

...read moreread less

37 citations

Cites background or methods from "Noise modeling methodologies in the..."

...The drain–current noise power spectrum density Sid(A(2)/Hz) in the presence of mobility degradation has been given as [11]...
[...]
...From the definition of the current at any position x for a nonuniform channel device [11] yields...
[...]
...Recently, a general expression for the channel noise has been presented by the generalized noise-calculation methodology in the presence of mobility degradation [11], which provides a first step to compact modeling of channel noise including the thermal noise and flicker noise....
[...]
...The power spectrum density of the local current fluctuations Sδi2n |thermal for the channel thermal noise has been given [11] Sδi2n |thermal = 4KBTL · g(2)(V,E) gc(V,E) · Tn TL (14)...
[...]
...where L is the channel length and VDS is the drain voltage in the models [11] replaced by Lelec as the electrical channel length and Vdeff as the effective source-referenced drain voltage, respectively....
[...]

Journal Article•DOI•

A compact quantum model of nanoscale double-gate metal-oxide-semiconductor field-effect transistor for high frequency and noise simulations

[...]

Antonio Manuel Lazaro, B. Nae, O. Moldovan, Benjamin Iniguez

26 Oct 2006-Journal of Applied Physics

TL;DR: In this paper, an analytical model for high frequency and microwave noise model of nanoscale double-gate metal-oxide-semiconductor field effect transistor is presented, based on a compact model for charge quantization within the channel and it includes overshoot velocity effects.

...read moreread less

Abstract: In this paper, we present an analytical model for high frequency and microwave noise model of nanoscale double-gate metal-oxide-semiconductor field-effect transistor. The model is based on a compact model for charge quantization within the channel and it includes overshoot velocity effects. Radio-frequency and noise performances are calculated using an active transmission line method. A comparison is made between classical and quantum charge control and between drift diffusion and hydrodynamic models.

...read moreread less

31 citations

1
2
3
4
…
5
6
7
8

Collapse

References

PDF

Open Access

More filters

Journal Article•DOI•

Noise modeling for RF CMOS circuit simulation

[...]

A.J. Scholten¹, L.F. Tiemeijer¹, R. van Langevelde¹, R.J. Havens¹, A.T.A. Zegers-van Duijnhoven¹, V. C. Venezia¹ - Show less +2 more•Institutions (1)

Philips¹

05 Jun 2003-IEEE Transactions on Electron Devices

TL;DR: In this paper, a nonquasi-static channel segmentation model was proposed to predict both drain and gate current noise in 0.18-/spl mu/m CMOS technology.

...read moreread less

Abstract: The RF noise in 0.18-/spl mu/m CMOS technology has been measured and modeled. In contrast to some other groups, we find only a moderate enhancement of the drain current noise for short-channel MOSFETs. The gate current noise on the other hand is more significantly enhanced, which is explained by the effects of the gate resistance. The experimental results are modeled with a nonquasi-static RF model, based on channel segmentation, which is capable of predicting both drain and gate current noise accurately. Experimental evidence is shown for two additional noise mechanisms: 1) avalanche noise associated with the avalanche current from drain to bulk and 2) shot noise in the direct-tunneling gate leakage current. Additionally, we show low-frequency noise measurements, which strongly point toward an explanation of the 1/f noise based on carrier trapping, not only in n-channel MOSFETs, but also in p-channel MOSFETs.

...read moreread less

375 citations

"Noise modeling methodologies in the..." refers background or methods in this paper

...Recently, [5], [6], and [13] presented a modified Klaassen–Prins approach to handle a limited (but very useful) class of mobility models but their work can not handle Scharfetter–Gummel type of mobility model which is often used in pMOS [7], [14]....
[...]
...At high frequency, the MOS transistor noise is mainly dominated by thermal noise coming from the channel [7]....
[...]
...We believe this was long overdue because there still exists some confusion, especially in the compact modeling community, about how mobility effects the noise transfer-function (see the inconsistencies between [2]–[4], [7], and [9])....
[...]

Journal Article•DOI•

RF CMOS comes of age

[...]

Asad A. Abidi¹•Institutions (1)

University of California, Los Angeles¹

08 Nov 2004-IEEE Journal of Solid-state Circuits

TL;DR: In this paper, a retrospective and a perspective of RF CMOS is presented, including its origins, the commercial impact, and how it will evolve in the future, as well as a discussion of the current state of the art.

...read moreread less

Abstract: All-CMOS radio transceivers and systems-on-a-chip are rapidly making inroads into a wireless market that for years was dominated by bipolar and BiCMOS solutions. It is not a matter of replacing bipolar transistors in known circuit topologies with FETs; the wave of RF CMOS brings with it new architectures and unprecedented levels of integration. What are its origins? What is the commercial impact? How will RF CMOS evolve in the future? This paper offers a retrospective and a perspective.

...read moreread less

235 citations

Journal Article•DOI•

An MOS transistor model for RF IC design valid in all regions of operation

[...]

Christian Enz

07 Aug 2002-IEEE Transactions on Microwave Theory and Techniques

TL;DR: In this paper, a charge-based model of the intrinsic part of the MOS transistor is presented, which is based on the forward and reverse charges q/sub f/ defined as the mobile charge densities, evaluated at the source and at the drain.

...read moreread less

Abstract: This paper presents an overview of MOS transistor modeling for RF integrated circuit design. It starts with the description of a physical equivalent circuit that can easily be implemented as a SPICE subcircuit. The MOS transistor is divided into an intrinsic part, representing mainly the active part of the device, and an extrinsic part responsible for most of the parasitic elements. A complete charge-based model of the intrinsic part is presented. The main advantage of this new charge-based model is to provide a simple and coherent description of the DC, AC, nonquasi-static (NQS), and noise behavior of the intrinsic MOS that is valid in all regions of operation. It is based on the forward and reverse charges q/sub f/ and q/sub r/ defined as the mobile charge densities, evaluated at the source and at the drain. This intrinsic model also includes a new simplified NQS model that uses a bias and frequency normalization allowing one to describe the high-order frequency behavior with only two simple functions. The extrinsic model includes all the terminal access series resistances, and particularly the gate resistance, the overlap, and junction capacitances as well as a substrate network. The latter is required to account for the signal coupling occurring at RF from the drain to the source and the bulk, through the junction capacitances. The noise model is then presented, including the effect of the substrate resistances on the RF noise parameters. All the aspects of the model are validated for a 0.25-/spl mu/m CMOS process.

...read moreread less

194 citations

"Noise modeling methodologies in the..." refers background in this paper

...Accurate noise modeling is a prerequisite for the application of CMOS technologies to low noise RF design [12]....
[...]

Journal Article•DOI•

Channel noise modeling of deep submicron MOSFETs

[...]

Chih-Hung Chen¹, M.J. Deen¹•Institutions (1)

McMaster University¹

07 Aug 2002-IEEE Transactions on Electron Devices

TL;DR: In this article, a new channel noise model using the channel length modulation (CLM) effect was proposed to calculate the channel noise of deep submicron MOSFETs.

...read moreread less

Abstract: This brief presents a new channel noise model using the channel length modulation (CLM) effect to calculate the channel noise of deep submicron MOSFETs. Based on the new channel noise model, the simulated noise spectral densities of the devices fabricated in a 0.18 /spl mu/m CMOS process as a function of channel length and bias condition are compared to the channel noise directly extracted from RF noise measurements. In addition, the hot electron effect and the noise contributed from the velocity saturation region are discussed.

...read moreread less

159 citations

"Noise modeling methodologies in the..." refers background in this paper

...We believe this was long overdue because there still exists some confusion, especially in the compact modeling community, about how mobility effects the noise transfer-function (see the inconsistencies between [2]–[4], [7], and [9])....
[...]

Journal Article•DOI•

A new model for thermal channel noise of deep-submicron MOSFETs and its application in RF-CMOS design

[...]

G. Knoblinger, P. Klein¹, H. Tiebout¹•Institutions (1)

Infineon Technologies¹

01 May 2001-IEEE Journal of Solid-state Circuits

TL;DR: A simple analytical model for the thermal channel noise of deep submicron MOS transistors including hot carrier effects is presented, verified by measurements and implemented in the standard BSIM3v3 SPICE model.

...read moreread less

Abstract: In this paper, we present a simple analytical model for the thermal channel noise of deep-submicron MOS transistors including hot carrier effects. The model is verified by measurements and implemented in the standard BSIM3v3 SPICE model. We show that the consideration of this additional noise caused by hot carrier effects is essential for the correct simulation of the noise performance of a low noise amplifier in the gigahertz range.

...read moreread less

122 citations

"Noise modeling methodologies in the..." refers background in this paper

...We believe this was long overdue because there still exists some confusion, especially in the compact modeling community, about how mobility effects the noise transfer-function (see the inconsistencies between [2]–[4], [7], and [9])....
[...]