Journal ArticleDOI
Nonuniform radiative recombination in n - i - p LED
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In this article, it was shown that recombination takes place not uniformly in the whole InAs/GaSb region but in a very close vicinity of the p contact, where the formation of high electric field and high carrier concentration domains in a biased device near SL interfaces with the contacts.Abstract:
Radiative recombination of InAs/GaSb superlattice (SL) n − i − p light emitting diodes (LED) was studied theoretically and experimentally. It is shown that recombination takes place not uniformly in the whole SL i region but in a very close vicinity of the p contact. The physics behind this is the formation of high electric field and high carrier concentration domains in a biased device near SL interfaces with the contacts. As a result, in narrow hole miniband the hole vertical diffusion coefficient falling off with the electric field is so small that holes are confined very close to the p contact. This reduces the effective recombination area to 1-2 periods of the SL.read more
Citations
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Journal ArticleDOI
Lattice parameter engineering for III–V long wave infrared photonics
TL;DR: In this paper, the design and fabrication of metamorphic periodic heterostructures containing InAsSb layers with controllable modulated Sb composition and well-regulated band alignments are reported.
Journal ArticleDOI
Effect of hole transport on performance of infrared type-II superlattice light emitting diodes
Youxi Lin,Sergey Suchalkin,Gela Kipshidze,Takashi Hosoda,Boris Laikhtman,D. Westerfeld,Leon Shterengas,Gregory Belenky +7 more
TL;DR: In this article, the effect of hole transport on the performance of infrared light emitting diodes (LED) was investigated and the experimental results indicate that due to suppressed vertical hole transport, the recombination of electrically injected electrons and holes in a type II superlattice LED active region takes place within a few superlatter periods near p-barrier.
References
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Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Superlattice and negative differential conductivity in semiconductors
Leo Esaki,Raphael Tsu +1 more
TL;DR: The study of superlattices and observations of quantum mechanical effects on a new physical scale may provide a valuable area of investigation in the fieId of semiconductors.
Journal ArticleDOI
Spontaneous and Stimulated Recombination Radiation in Semiconductors
Gordon J Lasher,Frank Stern +1 more
TL;DR: In this article, the spectral line shapes of the radiation produced by band-to-band recombination of excess carriers in semi-conductors are calculated under the assumption that the momentum matrix element is the same for all initial and final states, i.e., that there is no momentum selection rule.
Journal ArticleDOI
New Transport Phenomenon in a Semiconductor "Superlattice"
Leo Esaki,Leland Chang +1 more
TL;DR: In this article, the authors report electronic transport properties in a GaAs-AlAs periodic structure known as a "superlattice" prepared by a molecular-beam epitaxy.
Journal ArticleDOI
Semiconductor superlattices: a model system for nonlinear transport
TL;DR: In this article, the standard transport theories for superlattices, i.e., miniband conduction, Wannier-Stark hopping, and sequential tunneling, are reviewed in detail.