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Journal ArticleDOI

Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems

TL;DR: The environmentally friendly and uniform CsSnCl3 perovskite films are introduced to act as an active layer in the flexible memristors for the development of next-generation flexible electronics.
Abstract: Recently, several types of lead halide perovskites have been actively researched for resistive switching (RS) memory or artificial synaptic devices due to their current–voltage hysteresis along with the feasibility of fabrication, low-temperature processability and superior charge mobility. However, the toxicity and environmental pollution potential of lead halide perovskites severely restrict their large-scale commercial prospects. In the present work, the environmentally friendly and uniform CsSnCl3 perovskite films are introduced to act as an active layer in the flexible memristors. Ag/CsSnCl3/ITO devices demonstrate bipolar RS with excellent electrical properties such as forming free characteristics, good uniformity, low operating voltages, a high ON/OFF ratio (102) and a long retention time (>104 s). The RS mechanism has been well explained in the outline of electric field-induced formation and rupture of Ag filaments in the CsSnCl3 layer. The metallic nature of the conducting filament has been further confirmed by temperature-dependent variation of low and high resistance states. Additionally, various pulse measurements have been carried out to mimic some of the basic synaptic functions including postsynaptic current, paired-pulse facilitation, long-term potentiation and long-term depression under normal as well as bending conditions. Our work provides the opportunity for exploring artificial synapses based on lead-free halide perovskites for the development of next-generation flexible electronics.
Citations
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Journal ArticleDOI
TL;DR: In this paper , a review of perovskite-based eNVMs (memristors and field effect transistors) and their potentialities in storage or neuromorphic computing is presented.
Abstract: Perovskite materials have driven tremendous advances in constructing electronic devices owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties, flexible dimensionality engineering, and so on. Particularly, emerging nonvolatile memory devices (eNVMs) based on perovskites give birth to numerous traditional paradigm terminators in the fields of storage and computation. Despite significant exploration efforts being devoted to perovskite-based high-density storage and neuromorphic electronic devices, research studies on materials' dimensionality that has dominant effects on perovskite electronics' performances are paid little attention; therefore, a review from the point of view of structural morphologies of perovskites is essential for constructing perovskite-based devices. Here, recent advances of perovskite-based eNVMs (memristors and field-effect-transistors) are reviewed in terms of the dimensionality of perovskite materials and their potentialities in storage or neuromorphic computing. The corresponding material preparation methods, device structures, working mechanisms, and unique features are showcased and evaluated in detail. Furthermore, a broad spectrum of advanced technologies (e.g., hardware-based neural networks, in-sensor computing, logic operation, physical unclonable functions, and true random number generator), which are successfully achieved for perovskite-based electronics, are investigated. It is obvious that this review will provide benchmarks for designing high-quality perovskite-based electronics for application in storage, neuromorphic computing, artificial intelligence, information security, etc.

43 citations

Journal ArticleDOI
TL;DR: In this paper, a condensed overview of halide perovskite RRAMs based on materials, device performance, switching mechanism, and potential applications is provided, as well as the challenges, such as the quality and reliability of memory performance, and clarification of the switching mechanism.
Abstract: Resistive switching random access memory (RRAM), also known as memristor, is regarded as an emerging nonvolatile memory and computing-in-memory technology to address the intrinsic physical limitations of conventional memory and the bottleneck of von Neumann architecture. In particular, halide perovskite RRAMs have attracted widespread attention in recent years because of their ionic migration nature and excellent photoelectric properties. This Perspective first provides a condensed overview of halide perovskite RRAMs based on materials, device performance, switching mechanism, and potential applications. Moreover, this Perspective attempts to detail the challenges, such as the quality of halide perovskite films, the compatible processing of device fabrication, the reliability of memory performance, and clarification of the switching mechanism, and further discusses how the outstanding challenges of halide perovskite RRAMs could be met in future research.

31 citations

Journal Article
TL;DR: In this article, the competition between metallic and vacancy defect conductive filaments (CFs) was investigated in a resistive random access memory (RNA) cell with the top electrode and memory medium.
Abstract: Ion migration, which can be classified into cation migration and anion migration, is at the heart of redox-based resistive random access memory. However, the coexistence of these two types of ion migration and the resultant conductive filaments (CFs) have not been experimentally demonstrated in a single memory cell. Here we investigate the competition between metallic and vacancy defect CFs in a Ag/CH₃NH₃PbI₃/Pt structure, where Ag and CH₃NH₃PbI₃ serve as the top electrode and memory medium, respectively. When the medium layer thickness is hundreds of nanometers, the formation/diffusion of iodine vacancy (VI) CFs dominates the resistive switching behaviors. The VI-based CFs provide a unique opportunity for the electrical-write and optical-erase operation in a memory cell. The Ag CFs emerge and coexist with VI ones as the medium layer thickness is reduced to ∼90 nm. Our work not only enriches the mechanisms of the resistive switching but also would advance the multifunctionalization of resistive random access memory.

28 citations

Journal ArticleDOI
TL;DR: In this paper, the state of the art of perovskite-based flexible memristors is comprehensively and systematically reviewed, and the stability factors of flexible memrristors are discussed.
Abstract: Hybrid organic-inorganic metal halide perovskite (HOIP)-based memristors have captured strong attention not only as an emerging candidate for next-generation high-density information storage technology but also for use in healthcare technology and the Internet of Things (IoT) because of their unique properties: low weight, flexibility, compatibility, stretchability, and low power consumption. In this Perspective, we review the recent advances of various aspects of flexible memristors focusing on the selection of the flexible substrates, materials, interfaces, several resistive switching mechanisms, and different methodologies of perovskite growth. The current state of the art of the memristor as an artificial synapse, light-induced resistive switching, and logic gates is comprehensively and systematically reviewed. Finally, we briefly discuss the stability factors of perovskites and present the conclusion with a broad outlook on the progress and challenges in the field of perovskite-based flexible memristors.

26 citations

Journal ArticleDOI
TL;DR: In this article, the authors have successfully synthesized thermally stable cubic phase cesium tin chloride (CsSnCl3) perovskite nanocrystals with improved surface morphology by adopting a rapid hot-injection technique.
Abstract: Lead-free metal halide perovskites have attracted great attention as light harvesters due to their promising optoelectronic and photovoltaic properties. In this investigation, we have successfully synthesized thermally stable cubic phase cesium tin chloride (CsSnCl3) perovskite nanocrystals with improved surface morphology by adopting a rapid hot-injection technique. The excellent crystalline quality of these cubic shaped nanocrystals was confirmed by high-resolution transmission electron microscopy imaging. The binding of organic ligands on the surface of the sample was identified and characterized using nuclear magnetic resonance spectroscopy. UV-visible spectroscopy confirmed that the CsSnCl3 nanocrystals have a direct band gap of ∼2.98 eV, which was further confirmed using steady-state photoluminescence spectroscopy. The band edge positions calculated using the Mulliken electronegativity approach predicted the potential photocatalytic capability of the as-prepared nanocrystals, which was then experimentally corroborated through the photodegradation of rhodamine-B dye under both visible and UV-visible irradiation. Our theoretical calculations employing experimentally obtained structural parameters within the generalized gradient approximation (GGA) and GGA+U methods demonstrated a 90% accurate estimation of the experimentally observed optical band gap when Ueff = 6 eV was considered. The ratio of the effective mass of the hole and electron expressed as was also calculated for Ueff = 6 eV. Based on this theoretical calculation and experimental observation of the photocatalytic performance of CsSnCl3 nanocrystals, we have proposed a rational interpretation of the “D” value. We think that a “D” value of either much smaller or much larger than 1 is an indication of the low recombination rate of the photogenerated electron–hole pairs and the high photocatalytic efficiency of the photocatalyst. We believe that this comprehensive investigation might be helpful for the large-scale synthesis of thermally stable cubic CsSnCl3 nanocrystals and also for a greater understanding of their potential in photocatalytic, photovoltaic and other prominent optoelectronic applications.

21 citations

References
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Journal ArticleDOI
TL;DR: A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.
Abstract: Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.

4,547 citations

Journal ArticleDOI
08 Aug 2014-Science
TL;DR: Inspired by the brain’s structure, an efficient, scalable, and flexible non–von Neumann architecture is developed that leverages contemporary silicon technology and is well suited to many applications that use complex neural networks in real time, for example, multiobject detection and classification.
Abstract: Inspired by the brain’s structure, we have developed an efficient, scalable, and flexible non–von Neumann architecture that leverages contemporary silicon technology. To demonstrate, we built a 5.4-billion-transistor chip with 4096 neurosynaptic cores interconnected via an intrachip network that integrates 1 million programmable spiking neurons and 256 million configurable synapses. Chips can be tiled in two dimensions via an interchip communication interface, seamlessly scaling the architecture to a cortexlike sheet of arbitrary size. The architecture is well suited to many applications that use complex neural networks in real time, for example, multiobject detection and classification. With 400-pixel-by-240-pixel video input at 30 frames per second, the chip consumes 63 milliwatts.

3,253 citations

Journal ArticleDOI
TL;DR: Organolead trihalide perovskites are shown to exhibit the best of both worlds: charge-carrier mobilities around 10 cm2 V−1 s−1 and low bi-molecular charge-recombination constants.
Abstract: Organolead trihalide perovskites are shown to exhibit the best of both worlds: charge-carrier mobilities around 10 cm2 V−1 s−1 and low bi-molecular charge-recombination constants. The ratio of the two is found to defy the Langevin limit of kinetic charge capture by over four orders of magnitude. This mechanism causes long (micrometer) charge-pair diffusion lengths crucial for flat-heterojunction photovoltaics.

2,712 citations

Journal ArticleDOI
TL;DR: The results of this combined computational and experimental study suggest that hybrid halide perovskites are mixed ionic–electronic conductors, a finding that has major implications for solar cell device architectures.
Abstract: Understanding the mechanism of ionic transport in organic–inorganic halide perovskites is crucial for the design of future solar cells. Here, Eames et al. undertake a combined experimental and computational study to elucidate the ion conducting species and help rationalize the unusual behaviour observed in these perovskite-based devices.

2,050 citations

Journal ArticleDOI
TL;DR: The demonstration of switchable OTP photovoltaics and electric-field-manipulated doping paves the way for innovative solar cell designs and for the exploitation of OTP materials in electrically and optically readable memristors and circuits.
Abstract: Organolead trihalide perovskite (OTP) materials are emerging as naturally abundant materials for low-cost, solution-processed and highly efficient solar cells. Here, we show that, in OTP-based photovoltaic devices with vertical and lateral cell configurations, the photocurrent direction can be switched repeatedly by applying a small electric field of <1 V μm(-1). The switchable photocurrent, generally observed in devices based on ferroelectric materials, reached 20.1 mA cm(-2) under one sun illumination in OTP devices with a vertical architecture, which is four orders of magnitude larger than that measured in other ferroelectric photovoltaic devices. This field-switchable photovoltaic effect can be explained by the formation of reversible p-i-n structures induced by ion drift in the perovskite layer. The demonstration of switchable OTP photovoltaics and electric-field-manipulated doping paves the way for innovative solar cell designs and for the exploitation of OTP materials in electrically and optically readable memristors and circuits.

1,326 citations