Numerical simulation of dry and wet oxidation of Silicon by TCAD Sprocess
24 Jul 2013-pp 513-516
TL;DR: In this paper, the oxide thickness is compared for both the oxidation processes after different oxidation cycles and the percentage oxide thickness was also estimated and the oxide was found to grow more into the substrate with time and number of cycles.
Abstract: The oxide thickness is of great concern today. The basic idea is to grow SiO2 layer on Silicon. The oxide is grown on intrinsic silicon substrate by thermal oxidation i.e., wet oxidation and dry oxidation. The thickness is compared for both the oxidation processes after different oxidation cycles. The capacitance per unit length is also calculated for the oxide growth in above. The percentage oxide thickness is also estimated and the oxide is found to grow more into the substrate with time and number of cycles.
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Dissertation•
25 Nov 2019
TL;DR: In this paper, a 3D printed model is used for proving the concept and subsequent experiments prove that it is possible to determine the distance between a light source and the sensor by measuring the light intensity and the angle at which the light is incident towards the sensor.
Abstract: A new optical proximity sensor was developed and studied in this project. A 3D printed model is used for proving the concept. An integrated model with a new geometry was then microfabricated to further improve the sensor model’s performance. The sensing operation is based on measurement of light intensity falling on photodiodes placed at an inclined angle with respect to the base surface of the sensor. A mathematical model and subsequent experiments prove that it is possible to determine the distance between a light source and the sensor. This sensor is operated passively which means it does not need an active emission for range sensing. The sensor shows reliable operation for short range proximity detection in the range of 5-15 cm. The sensor structure is pyramidal placed flat on the surface with a fixed base angle. Two independent photodiodes are formed on two of the opposite sides of the pyramid. One such pyramid pixel is able to measure the light intensity and the angle at which the light is incident towards the sensor. Using the intensity measured by micro-fabricated test pyramids structures, the distance to the light source is measured. The experimental values demonstrate that the measurements are accurate and repeatable, more so, the device utilizes no active emission to attain proximity measurements. The discussed device can be used for close and continuous proximity detection in mobile devices with low power consumption.
1 citations
Cites methods from "Numerical simulation of dry and wet..."
...Wet oxidation [79, 80, 81] has been carried out in the oxidation furnace at the Engineering Science cleanroom at SFU....
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TL;DR: In this paper, the authors present a standardized terminology for oxide charges associated with the thermally oxidized silicon system, which is recommended by a committee established by the Electronics Division of the Electrochemical Society and the IEEE Semiconductor Interface Specialists Conference.
Abstract: Standarized terminology for oxide charges associated with the thermally oxidized silicon system is presented. This terminology is recommended by a committee established by the Electronics Division of the Electrochemical Society and the IEEE Semiconductor Interface Specialists Conference. All engineers and scientists concerned with oxide charges in silicon semiconductor applications are urged to adopt this terminology.
206 citations
TL;DR: In this paper, a low-temperature method for the preparation of SiO2 by thermal atomic layer deposition (ALD) provides perfect uniformity and surface coverage even into nanoscale pores, which may well suit recent demands in nanoelectronics and nanotechnology.
Abstract: SiO2 is the most widely used dielectric material but its growth or deposition involves high thermal budgets or suffers from shadowing effects. The low-temperature method presented here (150 °C) for the preparation of SiO2 by thermal atomic layer deposition (ALD) provides perfect uniformity and surface coverage even into nanoscale pores, which may well suit recent demands in nanoelectronics and nanotechnology. The ALD reaction based on 3-aminopropyltriethoxysilane, water, and ozone provides outstanding SiO2 quality and is free of catalysts or corrosive by-products. A variety of optical, structural, and electrical properties are investigated by means of infrared spectroscopy, UV-Vis spectroscopy, secondary ion mass spectrometry, capacitance-voltage and current-voltage measurements, electron spin resonance, Rutherford backscattering, elastic recoil detection analysis, atomic force microscopy, and variable angle spectroscopic ellipsometry. Many features, such as the optical constants (n, k) and optical transm...
99 citations
TL;DR: In this paper, the authors performed numerical simulation of thermal thin-film growth and found that the oxidation rate in the early stages of growth is governed by two processes: the rapid initial formation of the oxidation front and its subsequent diffusion.
Abstract: To gain a better understanding of the silicon oxidation process, we perform numerical simulation of thermal thin-film growth. It is shown that the oxidation rate in the early stages of growth is governed by two processes: the rapid initial formation of the oxidation front and its subsequent diffusion. The resulting oxidation rate provides a rather good description of the experimental data with the minimum number of variable parameters, suggesting that the effect of external parameters (such as temperature and pressure) can be explained in terms of scaling concepts. The results of the simulation are also in agreement with the fitting of experimental data to a power law (where is the measured film thickness and t the oxidation time) predicted by a simple model for thin film growth.
11 citations