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Journal ArticleDOI

Obtaining the specific contact resistance from transmission line model measurements

01 May 1982-IEEE Electron Device Letters (IEEE)-Vol. 3, Iss: 5, pp 111-113
TL;DR: In this article, it was shown that the contact end resistance and the consequent specific contact resistance can be deduced from simple resistance measurements carried out between contacts on a standard, transmission line model test pattern.
Abstract: In characterizing ohmic contacts using the transmission line model, it is necessary to make a measurement referred to as the contact end resistance, as a result of modification to the sheet resistance under the contact. In this article we show that this contact end resistance and the consequent specific contact resistance can be deduced from simple resistance measurements carried out between contacts on a standard, transmission line model test pattern.
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TL;DR: Most device issues, such as uniformity, long-term stability against bias stress and TFT performance, are solved for a-IGZO TFTs.

1,573 citations

Journal ArticleDOI
TL;DR: In this article, the state of the art in the field of experimental techniques possible to be applied to the study of conductometric gas sensors based on semiconducting metal oxides is reviewed.
Abstract: The paper critically reviews the state of the art in the field of experimental techniques possible to be applied to the study of conductometric gas sensors based on semiconducting metal oxides. The used assessment criteria are subordinated to the proposed R&D approach, which focuses on the study, and subsequent modelling, of sensors’ performance in realistic operation conditions by means of a combination of phenomenological and spectroscopic techniques. With this viewpoint, the paper presents both the to-date achievements and shortcomings of different experimental techniques, describes – by using selected examples – how the proposed approach can be used and proposes a set of objectives for the near future.

1,416 citations


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Journal ArticleDOI
TL;DR: In this article, the status of work performed by the Karlsruhe Nuclear Research Center with the cooperation of Siemens AG and the Fraunhofer Institute for Solid State Technology is described.

726 citations

Journal ArticleDOI
TL;DR: In this article, the influence of morphology and crystallographic structure on gas-sensing characteristics of metal oxide conductometric-type sensors have been analyzed, and it was concluded that the structural parameters of metal oxides are important factors for controlling response parameters of resistive type gas sensors.
Abstract: This review paper discusses the influence of morphology and crystallographic structure on gas-sensing characteristics of metal oxide conductometric-type sensors. The effects of parameters such as film thickness, grain size, agglomeration, porosity, faceting, grain network, surface geometry, and film texture on the main analytical characteristics (absolute magnitude and selectivity of sensor response (S), response time (τres), recovery time (τrec), and temporal stability) of the gas sensor have been analyzed. A comparison of standard polycrystalline sensors and sensors based on one-dimension structures was conducted. It was concluded that the structural parameters of metal oxides are important factors for controlling response parameters of resistive type gas sensors. For example, it was shown that the decrease of thickness, grain size and degree of texture is the best way to decrease time constants of metal oxide sensors. However, it was concluded that there is not universal decision for simultaneous optimization all gas-sensing characteristics. We have to search for a compromise between various engineering approaches because adjusting one design feature may improve one performance metric but considerably degrade another.

509 citations

Journal ArticleDOI
TL;DR: The physics and materials science of electrical contacts to carbon nanotubes, semiconductor nanowires and graphene are discussed, and the main research and development challenges in the field are outlined.
Abstract: Existing models of electrical contacts are often inapplicable at the nanoscale because there are significant differences between nanostructures and bulk materials arising from unique geometries and electrostatics. In this Review, we discuss the physics and materials science of electrical contacts to carbon nanotubes, semiconductor nanowires and graphene, and outline the main research and development challenges in the field. We also include a case study of gold contacts to germanium nanowires to illustrate these concepts.

468 citations


Cites background from "Obtaining the specific contact resi..."

  • ...The transfer length determines the contact resistance through the relatio...

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References
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Journal ArticleDOI
G.K. Reeves1
TL;DR: In this paper, the authors describe the application of the transmission line model to a contact test pattern of circular symmetry and show that using a circular test pattern, the mesa etch step necessary for the standard rectangular test pattern may be omitted, thus simplifying test pattern fabrication.
Abstract: The measurement of the specific contact resistance of ohmic contacts to semiconductors can be made in a number of ways. One of the methods uses a transmission line model of an ohmic contact on a semiconductor and this paper describes the application of the transmission line model to a contact test pattern of circular symmetry. By using a circular test pattern, the mesa etch step necessary for the standard rectangular test pattern may be omitted, thus simplifying test pattern fabrication.

266 citations

ReportDOI
01 Sep 1964
TL;DR: In this article, the authors describe development work toward a 10 watt 500 Mc silicon npn epitaxial transistor with 4 db gain, which they described as a shorted emitter.
Abstract: : The report describes development work toward a 10 watt 500 Mc silicon npn epitaxial transistor. An extensive design theory permits calculation of important material and geometrical parameters to realize a given performance. Diffusion studies produced a greater understanding of the emitter dip effect, but lacked the control necessary for thin, heavily doped layers. Ion bombardment doping and epitaxial base growth are described; both these methods are promising but require further development. Devices were produced giving up to 7 watts at 500 Mc with 4 db gain. An important device principle, the shorted emitter, is described. Methods of evaluating contact resistance and designing control structures for diffusion evaluation are discussed.

134 citations

Proceedings ArticleDOI
H. Berger1
01 Jan 1969
TL;DR: In this article, the electrical behavior of contacts on diffused resistors can be explained by an equivalent transmission line, and how the contacts can be optimized and what contributes to the contact resistance.
Abstract: The electrical behavior of contacts on diffused resistors can be explained by an equivalent transmission line. What contributes to the contact resistance and how the contacts can be optimized will be discussed in this paper.

80 citations

Journal ArticleDOI
TL;DR: In this article, the authors investigated the Si-implanted, n+ layers on semi-insulating InP and found that the Au/Ni/AuGeNi/InP system shows a good ohmic behaviour with the specific contact resistance ρ c of 2 × 10 −5 Ω cm 2 and the minimum contact resistance Z c of ∼ 2 ×10 −3 Ωcm for a Si-dose higher than 2 × 1014 cm−2 at 100 or 200 keV.
Abstract: Ohmic contacts to Si-implanted, n+ layers on semi-insulating InP are investigated on the basis of the transmission line model. It is found that Au/Ni/AuGeNi/InP system shows a good ohmic behaviour with the specific contact resistance ρ c of 2 × 10 −5 Ω cm 2 and the minimum contact resistance Z c of ∼ 2 × 10 −3 Ω cm for a Si-dose higher than 2 × 1014 cm−2 at 100 or 200 keV. The results indicate that, in the FET fabrication, at least 120 μm in length is necessary in order to obtain source and drain electrodes with the minimized resistance.

16 citations