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of the effect of gate voltage on the performance of organic bulk hetero-junction based phototransistor
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In this paper, the effect of gate voltage on the performance of poly(3hexylthio phene) (P3HT) and (6,6)-phenyl C61-butyric acid methylester (PCBM) bulk hetero-junction based organic phototransistor was investigated.Abstract:
com Abstract- In this work, we have investigated the effect of gate voltage on the performance of poly(3-hexylthio phene) (P3HT) and (6,6)-phenyl C61-butyric acid methylester (PCBM) bulk hetero-junction based organic phototransistor. Transistor was fabricated in MESFET configuration with top gate and bottom drain-source electrodes on glass substrate. Active layer showed Schottky type contact with Gate electrode and Ohmic contact with Drain-Source electrodes. Current-Voltage (1-V) characteristics of the device were studied under dark and UV -Vis illumination. Active layer of the device has shown p-type and am bipolar properties under dark and UV-Vis illumination, respectively. Drain to source current of the phototransistor was found dependent on the illumination intensity and gate to source voltage. Photo sensitivity and responsivity values of the device were found to decrease exponentially with the increase of gate voltage. Photo sensitivity and responsivity values of the device were found equal to 11 and 0.024 AIW, respectively, at 90mW/cm2 UV-Vis illumination intensity and 0 gate voltage. anthrncene based highly photosensitive phototransistor with carrier mobility and photo responsivity values equal to 0.2-1.6 cm2V·IS-1 and 1.0-1.1 x 104 AWl, respectively, under an illumination intensity of 104 11 Wcm·2• Phototransistors based on thin films of P3HT 181, BPTT 191, TiOPc 1101 and Pentacene 1111 were also demonstrnted and photo responsivity values of these devices were reported in the rnnge of 1.3 to 250 A W·1• Yu et at. 1121 developed single crystalline BPE-PTCDI nanowires based high performance phototrnnsistors with a maximum photo responsivity value of lAO x 103 A WI under red and green light illumination. Organic bulk hetero-junction based phototransistors, using the blends of two or more organic semiconductors, were also well investigated with an aim to increase their performance since the demonstrntion of first organic bulk hetero-junction based phototrnnsistors by Marjanovic et a1. (13) which were realized using MDMO PPV:PCBM blends with trnnsparent gate dielectrics. Recently, a highly sensitive near infrared phototransistor was reported by Xu et at. 1141, which was based on an organic bulk hetero junction of DPP-DTT and PCBM Mok et aI. (15) fabricated and charncterized an organic phototrnnsistor using the blend of P3HT and Ti02 nanoparticles, and photo sensitivity of the device was reported to be the function of the concentrntion of Ti02 nanoparticles, wavelength of illumination and the voltage between drnin and souree electrodes.read more
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Patent
Transparent and flexible photoelectric sensor and preparation method thereof
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References
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Journal ArticleDOI
Flexible polymer transistors with high pressure sensitivity for application in electronic skin and health monitoring
Gregor Schwartz,Benjamin C. K. Tee,Jianguo Mei,Anthony L. Appleton,Do Hwan Kim,Do Hwan Kim,Huiliang Wang,Zhenan Bao +7 more
TL;DR: It is demonstrated that the flexible pressure-sensitive organic thin film transistors fabrication can be used for non-invasive, high fidelity, continuous radial artery pulse wave monitoring, which may lead to the use of flexible pressure sensors in mobile health monitoring and remote diagnostics in cardiovascular medicine.
Journal ArticleDOI
Current saturation in zero-bandgap, top-gated graphene field-effect transistors.
TL;DR: The first observation of saturating transistor characteristics in a graphene field-effect transistor is reported, demonstrating the feasibility of two-dimensional graphene devices for analogue and radio-frequency circuit applications without the need for bandgap engineering.
Journal ArticleDOI
P3HT:PCBM, best seller in polymer photovoltaic research.
TL;DR: This Research News article is focused on a survey of the tremendous literature published between 2002 and 2010 that exhibits solar cells based on blends of P3HT and PCBM.
Book
Semiconductor physics and devices basic principles
TL;DR: In this paper, the authors present a detailed discussion of the properties of semiconductors in terms of their properties, properties, and properties, including the junction junction and the junction field effect transistors.
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Humidity effect on electrical performance of organic thin-film transistors
TL;DR: In this article, the degradation of electrical performance under high relative humidity was attributed to charge trapping at grain boundaries by polar water molecules reducing the rate of charge transport, and the moisture sensitivity of the OTFT saturation current depends on the device geometry (bottom or top contact device) and channel length.