OFF-State Leakage and Performance Variations Associated With Germanium Preamorphization Implant in Silicon–Germanium Channel pFET
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"OFF-State Leakage and Performance V..." refers background in this paper
...In order to investigate the effect of Ge PAI on random variation of leakage and performance, a Pelgrom plot [22] of VT mismatch in linear region for both the splits is made....
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612 citations
"OFF-State Leakage and Performance V..." refers background in this paper
...11 with ρ = −0.06, indicating that RDF and MGG are the dominant sources of variability as compared to LER....
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...+ σ 2(tSiGe) + σ 2(Si) (1) where σ is the standard deviation of the electrical parameter and σ (Si) could be due to σ (RDF), σ (LER), and/or σ (MGG) depending on the device design and architecture....
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...Now, in order to find the dominant variability source between RDF and LER, we extract scatterplots of measured DIBL and linear threshold voltage (VTlin) for many identical devices for both the splits....
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...Sources of random variation could be due to random fluctuation (RDF) of number and position of dopant atoms [5], line-edge roughness (LER) [6], [7], metal gate granularity (MGG) [8], [9], and other contributors to work function (WF) variation [10]....
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...LER generally exhibits strong correlation between DIBL and VTlin [25]....
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577 citations
"OFF-State Leakage and Performance V..." refers background in this paper
...Sources of random variation could be due to random fluctuation (RDF) of number and position of dopant atoms [5], line-edge roughness (LER) [6], [7], metal gate granularity (MGG) [8], [9], and other contributors to work function (WF) variation [10]....
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350 citations
"OFF-State Leakage and Performance V..." refers background in this paper
...CONTINUED CMOS scaling for high performance, low power, and cost-effective utilization of scaling has resulted in increased statistical variability of the transistor’s electrical parameters [1]–[4]....
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218 citations
"OFF-State Leakage and Performance V..." refers background in this paper
...CONTINUED CMOS scaling for high performance, low power, and cost-effective utilization of scaling has resulted in increased statistical variability of the transistor’s electrical parameters [1]–[4]....
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