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Journal ArticleDOI

On the carrier contribution to the elastic constants in ultrathin films of IV-VI compounds in the presence of a parallel magnetic field

B. R. Nag, +1 more
- 01 Dec 1996 - 
- Vol. 54, Iss: 6, pp 657-659
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TLDR
In this paper, the authors studied the contribution of the 2D carrier dispersion law to the second and third order elastic constants in ultrathin films of IV-VI compounds in the presence of a parallel magnetic field.
Abstract
We study the carrier contribution to the elastic constants in ultrathin films of IV-VI compounds in the presence of a parallel magnetic field on the basis of a new 2D carrier dispersion law. It is found, taking ultrathin films of PbS, PbSe and PbTe as examples, that the carrier contribution to the second and third order elastic constants increases with decreasing film thickness in various oscillatory manners. The magnetic field and the ultrathin structure enhance the numerical values of the same contribution. We have suggested an experimental method of determining the said contribution in ultrathin materials having arbitrary dispersion laws.

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Citations
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Journal ArticleDOI

On the two dimensional effective electron mass in quantum wells, inversion layers and NIPI superlattices of Kane type semiconductors in the presence of strong light waves: Simplified theory and relative comparison

TL;DR: In this article, an attempt is made to study the two dimensional (2D) effective electron mass (EEM) in quantum wells (Qws), inversion layers (ILs) and NIPI superlattices of Kane type semiconductors in the presence of strong external photoexcitation on the basis of a newly formulated electron dispersion laws within the framework of k.p. formalism.
Journal ArticleDOI

Thermoelectric power in ultrathin films, quantum wires and carbon nanotubes under classically large magnetic field: Simplified theory and relative comparison

TL;DR: In this article, the thermoelectric power under classically large magnetic field (TPM) in ultrathin films (UFs), quantum wires (QWs) of nonlinear optical materials on the basis of a newly formulated electron dispersion law considering the anisotropies of the effective electron masses, the spin-orbit splitting constants and the presence of the crystal field splitting within the framework of kp formalism.
Book ChapterDOI

Applications and Brief Review of Experimental Results

TL;DR: In this article, the authors have discussed many aspects of TPSM based on the dispersion relations of the nanostructures of different technologically important materials having different band structures in the presence of 1D, 2D, and 3D confinements of the wavevector space of the charge carriers, respectively.
Book ChapterDOI

Screening Length, Terahertz Frequency and Opto-electronic Compounds

TL;DR: In this article, the influence of size quantization, magnetic quantization and cross-field configurations on the screening length in opto-electronic compounds has been studied and the results in the absence of terahertz frequency have been analyzed.
Book ChapterDOI

Suggestion for Experimental Determinations of 2D and 3D ERs and Few Related Applications

TL;DR: In this article, the experimental determinations of 2D and 3D ERs for HD materials having arbitrary dispersion laws are discussed and theoretical results for bulk specimens of n-Cd3As2 in the absence of band tailing are provided.
References
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Book

Electron transport in compound semiconductors

B. R. Nag
TL;DR: In this paper, the Boltzmann Transport Equation is used to calculate the collision probability of the Sphalerite and the Chalcopyrite structures, and the Brillouin Zone is used for the Wurtzite structure.
Journal ArticleDOI

On The Electronic Contribution to Elastic Constants of Ultrathin Films of P-Type Si

Kamaxhya P Ghatak, +1 more
- 01 Jan 1991 - 
TL;DR: In this paper, the electronic contribution to the elastic constants in ultrathin films of p-Si by considering the influences of heavy, light and split-off holes respectively was formulated.
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