On the problem of the consistency of the high-temperature precipitation model with the classical nucleation theory
TL;DR: In this article, the adequacy of the model of high-temperature precipitation in dislocation-free silicon single crystals to the classical theory of nucleation and growth of second-phase particles in solids has been considered.
Abstract: The adequacy of the model of high-temperature precipitation in dislocation-free silicon single crystals to the classical theory of nucleation and growth of second-phase particles in solids has been considered. It has been shown that the introduction and consideration of thermal conditions of crystal growth in the initial equations of the classical nucleation theory make it possible to explain the precipitation processes occurring in the high-temperature range and thus extend the theoretical basis of the application of the classical nucleation theory. According to the model of high-temperature precipitation, the smallest critical radius of oxygen and carbon precipitates is observed in the vicinity of the crystallization front. Cooling of the crystal is accompanied by the growth and coalescence of precipitates. During heat treatments, the nucleation of precipitates starts at low temperatures, whereas the growth and coalescence of precipitates occur with an increase in the temperature. It has been assumed that the high-temperature precipitation of impurities can determine the overall kinetics of defect formation in other dislocation-free single crystals of semiconductors and metals.
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TL;DR: In this article, the fabrication of Ni RTDs at low temperatures is investigated by direct-current (DC) magnetron sputtering, and the effects of sputter pressure and power on thin film microscopic morphology and structure are also investigated.
14 citations
TL;DR: In this paper, a comparative analysis of modern theoretical approaches to the description of interaction of point defects and formation of the initial defect structure of dislocation-free silicon single crystals has been carried out.
Abstract: Theoretical studies of defect formation in semiconductor silicon play an important role in the creation of breakthrough ideas for next-generation technologies. A brief comparative analysis of modern theoretical approaches to the description of interaction of point defects and formation of the initial defect structure of dislocation-free silicon single crystals has been carried out. Foundations of the diffusion model of the formation of structural imperfections during the silicon growth have been presented. It has been shown that the diffusion model is based on high-temperature precipitation of impurities. The model of high-temperature precipitation of impurities describes processes of nucleation, growth, and coalescence of impurities during cooling of a crystal from 1683 to 300 K. It has been demonstrated that the diffusion model of defect formation provides a unified approach to the formation of a defect structure beginning with the crystal growth to the production of devices. The possibilities of using the diffusion model of defect formation for other semiconductor crystals and metals have been discussed. It has been shown that the diffusion model of defect formation is a platform for multifunctional solution of many key problems in modern solid state physics. Fundamentals of practical application of the diffusion model for engineering of defects in crystals with modern information technologies have been considered. An algorithm has been proposed for the calculation and analysis of a defect structure of crystals.
8 citations
TL;DR: In this paper, the formation of silicon carbon and siliconoxygen complexes during cooling after the growth of dislocation-free silicon single crystals has been calculated using the Vlasov model of crystal formation.
Abstract: The formation of silicon–carbon and silicon–oxygen complexes during cooling after the growth of dislocation-free silicon single crystals has been calculated using the Vlasov model of crystal formation. It has been confirmed that the complex formation begins in the vicinity of the crystallization front. It has been shown that the Vlasov model of a solid state can be used not only for the investigation of hypothetical ideal crystals, but also for the description of the formation of a defect structure of real crystals.
7 citations
17 Feb 2006
TL;DR: In this paper, the authors present a detailed review of the defect dynamics in the Czochralski process and the float-zone process in growing CZ and FZ crystals.
Abstract: A vast majority of modern microelectronic devices are built on the monocrystalline silicon substrates produced from the crystals grown by the Czochralski (CZ) process and the float-zone (FZ) process. Silicon crystals inherently contain various precipitates known as microdefects that often affect the yield and the performance of many devices. Hence, the quantitative understanding and the control of the microdefect formation and the microdefect distributions in silicon crystals play a central role in determining the quality of silicon substrates. This paper reviews significant developments in the field of the quantification of the defect dynamics in growing CZ and FZ crystals. The breakthrough discovery of the initial point defect incorporation in the vicinity of the melt/crystal interface made in the early 1980s allowed a simplified quantification of the CZ and the FZ defect dynamics. A deeper insight into the formation and the growth of microdefects was provided over the past decade by various treatments of the agglomeration of the intrinsic point defects of silicon. In particular, a rigorous quantification of the agglomeration of the point defects using the classical nucleation theory, a recently developed lumped model that captures the microdefect distribution by representing the actual population of microdefects by an equivalent population of identical microdefects, and another rigorous treatment involving the Fokker-Planck equations are discussed in detail.
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Book•
01 Jan 1965
4,036 citations
Book•
01 Jan 1965
TL;DR: In this paper, the authors present a general introduction to the theory of transformation kinetics of real metals, including the formation and evolution of martensitic transformations, as well as a theory of dislocations.
Abstract: Part I General introduction. Formal geometry of crystal lattices. The theory of reaction rates. The thermodynamics of irreversable processes. The structure of real metals. Solids solutions. The theory of dislocations. Polycrystalline aggregates. Diffusion in the solid state. The classical theory of nucleation. Theory of thermally activated growth. Formal theory of transformation kinetics. Part II Growth from the vapour phase. Solidification and melting. Polymorphic Changes. Precipitation from supersaturated solid solution. Eutectoidal transformations. Order-disorder transformations. Recovery recrystalisation and grain growth. Deformation twinning. Characteristics of martensic transformations. Crystallography of martensitic transformations. Kinetics of martensitic transformations. Rapid solidification. Bainite steels. Shape memory alloys.
3,397 citations
TL;DR: In this article, the first stage of defect formation is recombination and diffusion of vacancies and self-interstitials in the vicinity of the crystallization front, followed by several successive stages: diffusion of interstitials to the crystal surface, nucleation of primary interstitial clusters, cluster growth, conversion of clusters into other forms (particularly dislocation loops).
498 citations
TL;DR: In this article, the early stages of oxygen segregation at dislocation and precipitation in the bulk have been investigated by high-resolution electron microscopy in Czochralski grown silicon, and two kinds of precipitates are observed: a crystalline silica phase, coesite, and an amorphous phase.
Abstract: The early stages of oxygen segregation at dislocation and precipitation in the bulk have been investigated by high‐resolution electron microscopy in Czochralski grown silicon. Two kinds of precipitates are observed: a crystalline silica phase, coesite, and an amorphous phase. Both forms coexist after 650 °C heat treatment: the so‐called rodlike defects are in fact long 〈011〉 ribbons of coesite associated with interstitial dipoles. This crystalline form is favored by a high oxygen supersaturation and a low carbon content. Above 870 °C amorphous platelets of silica are formed on the {100} planes, whereas coesite is no longer observed but interstitial dislocation loops are always present. The strain produced by such precipitates is partially relaxed by Si interstitial emission, which explains the internal formation of dislocations. It is suggested that both forms are nucleated on two different species of nuclei. At 〈011〉 dislocation cores it is shown that the coesite phase is stabilized over a wide range of oxygen content or annealing temperature.
203 citations