Journal ArticleDOI
On the structural origin of the photoluminescence in silicon powder produced in PECVD processes
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In this article, the origin of photoluminescence emitted by silicon powder produced by plasma-enhanced chemical vapor deposition is analyzed in view of the structural changes induced by laser annealing.About:
This article is published in Thin Solid Films.The article was published on 1996-04-15. It has received 4 citations till now. The article focuses on the topics: Raman spectroscopy & Plasma-enhanced chemical vapor deposition.read more
Citations
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Journal ArticleDOI
Blackbody emission under laser excitation of silicon nanopowder produced by plasma-enhanced chemical-vapor deposition
TL;DR: In this paper, a model was developed that considers the particles in the powder as independent, so under vacuum the only dissipation mechanism is thermal radiation, and the supralinear dependence observed between the intensity of the emitted radiation and laser power is predicted by the model, as is the exponential quenching when the gas pressure around the sample increases.
Journal ArticleDOI
Production of nanometric particles in radio frequency glow discharges in mixtures of silane and methane
TL;DR: In this paper, the a−Si1−xCx:H powders were obtained from different precursor gas mixtures, from R=0.05 to R=9, where R=[SiH4]/([SiH 4]+[CH4])...
Book ChapterDOI
Nanoparticles from low-pressure, low-temperature plasmas
TL;DR: In this paper, the formation of particles in low-temperature, low-pressure plasmas is discussed and various technological aspects of the formation and characterization of the powders are discussed.
Journal ArticleDOI
Photoluminescence of silicon nanostructures prepared via hydrothermal growth progress
Sun Congli,Hu Hao,Yi Liang,Bai Xue,Yang Yumeng,Feng Huanhuan,Xu Jingjing,Chen Yu,Jin Yong,Jiao Zhifeng,Sun Xiaosong +10 more
TL;DR: In this paper, the authors focus on the preparation and characterization of silicon nano-structures prepared via hydrothermal growth technology and present that there is a strong photoluminescence emission at about 400 nm and a weak one at about 700 nm.
References
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Journal ArticleDOI
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TL;DR: In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Journal ArticleDOI
Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering
TL;DR: In this article, the number and nature of the silicon-hydrogen bonds in amorphous silicon films prepared in plasmas either of silane or of hydrogen and argon were studied.
Journal ArticleDOI
The origin of visible luminescencefrom “porous silicon”: A new interpretation
TL;DR: In this paper, the authors compared the luminescence and vibrational properties of anodically oxidized (porous) silicon and of chemically synthesized siloxene (Si 6 O 3 H 6 ) and its derivates.
Journal ArticleDOI
Multiphonon Raman Spectrum of Silicon
Paul A. Temple,C. E. Hathaway +1 more
TL;DR: In this paper, the energy and polarization characteristics of the one and two-phonon Raman spectrum have been measured using a 180\ifmmode^\circ\else\text degree\fi{} backscattering technique.
Journal ArticleDOI
Quantum size effects on the optical band gap of microcrystalline Si:H.
Shoji Furukawa,Tatsuro Miyasato +1 more
TL;DR: The structural analysis showed that the materials consist of small crystalline silicon particles surrounded by hydrogen atoms, whose diameters are 20--30 A\r{}.