One-Time Programmable Memory Based on ${\rm ZrTiO}_{x}$ Antifuse for Crossbar Memory Application Featuring High Speed Operation and Low Power Consumption
TL;DR: TaN/ZrTiOx/Pt metal-insulator-metal structure was employed as the platform to evaluate the eligibility for antifuse one-time programmable (OTP) memory applications, and the impact of O2 plasma on device performance was also discussed.
Abstract: TaN/ZrTiOx/Pt metal-insulator-metal structure was employed as the platform to evaluate the eligibility for antifuse one-time programmable (OTP) memory applications, and the impact of O2 plasma on device performance was also discussed. Owing to the oxygen radicals that enhance the dielectric integrity, the voltage for state switching increases with O2 plasma treatment. Memory cells without plasma treatment demonstrate promising characteristics for OTP memory applications in terms of a low dc switching voltage of 2 V, high programming speed of 60 ns, high read endurance up to 106 reading cycles, and desirable retention time and low switching power density of 6.4 mW/cm2. The memory cell technology not only exhibits the prominent performance which is advantageous over other dielectrics reported in the literature, but it also possesses the capability to from stackable 3-D architecture.
Citations
More filters
5 citations
Journal Article•
4 citations
TL;DR: In this paper, the degradation mechanism of an atomic layer deposition Al2O3 based metal-insulator-metal antifuse device under both positive and negative voltage polarities was investigated.
Abstract: In this paper, we investigated the degradation mechanism of an atomic layer deposition Al2O3 based metal-insulator-metal antifuse device under both positive and negative voltage polarities. It was found that the leakage current of the antifuse device was larger under negative voltage polarity compared to positive voltage polarity, while the lifetime was longer for negative stress than that of positive stress. We found that the degradation mechanism under positive voltage stress was strongly influenced by the good oxygen affinity of top electrode metal Ti, and the current that flowed through the dielectric was not a main source in the degradation process. The electron trapping characteristics of the device were also investigated, and it may contribute to obtain a long lifetime.
3 citations
Patent•
29 Jul 2016TL;DR: In this paper, the authors proposed a repeatably random read integrated circuit memory using dielectric-fuse mechanism, where the storage device of this memory programs the information by using the fuse mechanism.
Abstract: This disclosure proposed one kind of one-time programming and repeatably random read integrated circuit memory. The storage device of this memory programs the information by using dielectric-fuse mechanism. The main characteristics of dielectric fuse mechanisms is that by applying an electric field on the dielectrics, the ions or atoms in the dielectrics are drifted-out, or the dielectrics are burned-out, that create damage of the dielectric structure in a form of porosity, and the conductivity (resistivity) of tunneling current through the dielectrics changes the state from high conductivity (resistivity) to low conductivity (resistivity). The dielectric fuse mechanism has been integrated in VLSI circuits, completed the validation, and implemented by the fabrication of CMOS process.
2 citations
References
More filters
TL;DR: In this paper, a field-programmable, stackable memory cell using 0.15/spl mu/m technology is demonstrated. The cell is programmed when sufficient biasing voltage is applied to break down the antifuse.
Abstract: A field-programmable, stackable memory cell using 0.15-/spl mu/m technology is demonstrated. Vertical polycrystalline silicon diodes are stacked on top of one another, with tungsten (with TiN adhesion film) interconnect wires. An SiO/sub 2/ antifuse film separates the top of each diode from the TiN-W films. The cell is programmed when sufficient biasing voltage is applied to break down the antifuse, connecting the diode to tungsten. The cell is unprogrammed when the antifuse is intact. Cell fabrication and performance are described.
123 citations
TL;DR: In this paper, a simple analytical expression is derived which relates the capacitance to the applied bias, which is able to predict voltage coefficients of capacitance and is found to be in good agreement with experimental C-V.
Abstract: Metal-insulator-metal capacitors using high-k oxides are known to display nonlinear capacitance-voltage (C-V) characteristics. In the present work it is proposed that such nonlinearities arise from an electrode polarization mechanism. By considering a field activated hopping conduction in the bulk (related to oxygen vacancies), a simple analytical expression is derived which relates the capacitance to the applied bias. The model is able to predict voltage coefficients of capacitance and is found to be in good agreement with experimental C-V.
89 citations
TL;DR: In this article, a three-transistor (3-T) cell CMOS one-time programmable (OTP) ROM array using CMOS antifuse (AF) based on permanent breakdown of MOSFET gate oxide is proposed, fabricated and characterized.
Abstract: A three-transistor (3-T) cell CMOS one-time programmable (OTP) ROM array using CMOS antifuse (AF) based on permanent breakdown of MOSFET gate oxide is proposed, fabricated and characterized. The proposed 3-T OTP cell for ROM array is composed of an nMOS AF, a high-voltage blocking nMOS, and cell access transistor, all compatible with standard CMOS technology. The experimental results show that the proposed structure can be a viable technology option of high-density CMOS OTP ROM array for modern digital as well as analog circuits.
52 citations
"One-Time Programmable Memory Based ..." refers methods in this paper
...Traditionally, SiO2 [3]–[5] in MOS structure has been used as the memory cell for antifuse devices....
[...]
...OTP memory cells in MIM structure were formed by first depositing 100-nm TaN layer on SiO2 as wordline (WL)....
[...]
TL;DR: Using stacked covalent-bond-dielectric GeOx, on metal-oxynitride HfON, the Ni/GeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power was 0.6 nW (-0.3 nA at -1.8V), fast 20-ns switching time, ultra-low 8-fJ switching energy (4-V overstress), and excellent 106 cycling
Abstract: Using stacked covalent-bond-dielectric GeOx, on metal-oxynitride HfON, the Ni/GeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at -1.8V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 106 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metal-oxide RRAM.
40 citations
TL;DR: In this article, an alloxide-based nonvolatile memory for low-cost, high-density, and high-performance one-time field-programmable (OTP) memories compared with Si-based antifuse memory using Antifuse technologies over a glass substrate was developed.
Abstract: We developed all-oxide-based nonvolatile memory for low-cost, high-density, and high-performance one-time field-programmable (OTP) memories compared with Si-based antifuse memory using antifuse technologies over a glass substrate The oxide OTP memory employed the p-CuO/InZnOx diode as the switching element of the memory cell and Al2O3 for the antifuse as the storage node of the memory cell The memory cell is programmed from the breakdown of Al2O3 by applying a program voltage bias that is about 45 V The OTP memory cells show large on/off ratio of about 106 and small current distributions at programmed and unprogrammed states resulting from the perfect uniformity of Al2O3 thin film before and after breakdown It also showed a fast programming speed of about 20 ns
38 citations